BSH111,215
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Nexperia USA Inc. BSH111,215

Manufacturer No:
BSH111,215
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 55V 335MA TO236AB
Delivery:
Payment:
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iso45001
iso9001
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Product Introduction

Overview

The BSH111,215 is a N-channel enhancement-mode MOSFET produced by Nexperia USA Inc. This component utilizes TrenchMOS™ technology and is packaged in a TO-236AB (SOT-23) surface-mount package. Although the BSH111,215 is currently obsolete and no longer manufactured, it remains relevant for understanding the capabilities and applications of similar MOSFETs.

Key Specifications

ParameterValue
TechnologySilicon (Si)
Drain-Source Breakdown Voltage (Vds)55 V
Drain Current (Id)335 mA
On-State Resistance (Rds(on))2.3 ohm
Package TypeTO-236AB (SOT-23)
Mounting TypeSurface Mount

Key Features

  • Enhancement-mode N-channel MOSFET
  • TrenchMOS™ technology for improved performance
  • Low on-state resistance (Rds(on)) of 2.3 ohm
  • High drain-source breakdown voltage of 55 V
  • Compact TO-236AB (SOT-23) surface-mount package

Applications

  • Battery management systems
  • High-speed switching applications
  • Power management circuits
  • General-purpose power switching

Q & A

  1. What is the BSH111,215? The BSH111,215 is a N-channel enhancement-mode MOSFET produced by Nexperia USA Inc.
  2. What is the drain-source breakdown voltage of the BSH111,215? The drain-source breakdown voltage is 55 V.
  3. What is the on-state resistance (Rds(on)) of the BSH111,215? The on-state resistance is 2.3 ohm.
  4. What package type is used for the BSH111,215? The BSH111,215 is packaged in a TO-236AB (SOT-23) surface-mount package.
  5. Is the BSH111,215 still in production? No, the BSH111,215 is obsolete and no longer manufactured.
  6. What are some common applications for the BSH111,215? Common applications include battery management systems, high-speed switching, power management circuits, and general-purpose power switching.
  7. What technology is used in the BSH111,215? The BSH111,215 uses TrenchMOS™ technology.
  8. What is the maximum drain current of the BSH111,215? The maximum drain current is 335 mA.
  9. Why is the BSH111,215 suitable for high-speed switching applications? It is suitable due to its low on-state resistance and high drain-source breakdown voltage.
  10. Where can I find substitutes for the BSH111,215? Substitutes can be found through distributors like Digi-Key, Mouser, or Farnell.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:335mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:4Ohm @ 500mA, 4.5V
Vgs(th) (Max) @ Id:1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:1 nC @ 8 V
Vgs (Max):±10V
Input Capacitance (Ciss) (Max) @ Vds:40 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):830mW (Tc)
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
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Same Series
BSH111,235
BSH111,235
MOSFET N-CH 55V 335MA TO236AB

Similar Products

Part Number BSH111,215 BSH114,215 BSH111,235
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 100 V 55 V
Current - Continuous Drain (Id) @ 25°C 335mA (Ta) 500mA (Ta) 335mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 10V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 4Ohm @ 500mA, 4.5V 500mOhm @ 500mA, 10V 4Ohm @ 500mA, 4.5V
Vgs(th) (Max) @ Id 1.3V @ 1mA 4V @ 1mA 1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 1 nC @ 8 V 4.6 nC @ 10 V 1 nC @ 8 V
Vgs (Max) ±10V ±20V ±10V
Input Capacitance (Ciss) (Max) @ Vds 40 pF @ 10 V 138 pF @ 25 V 40 pF @ 10 V
FET Feature - - -
Power Dissipation (Max) 830mW (Tc) 360mW (Ta), 830mW (Tc) 830mW (Tc)
Operating Temperature -65°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package TO-236AB TO-236AB TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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