PDTC123JT,215
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Nexperia USA Inc. PDTC123JT,215

Manufacturer No:
PDTC123JT,215
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS NPN 50V TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PDTC123JT,215 is a 50 V, 100 mA NPN resistor-equipped transistor (RET) manufactured by Nexperia USA Inc. This transistor is packaged in a small SOT23 (TO-236AB) surface-mounted device (SMD) plastic package. It is designed to simplify circuit design and reduce component count, making it a cost-effective solution for various digital applications. The PDTC123JT,215 is a suitable alternative to the BC847 series in digital applications and is particularly useful for controlling IC inputs and switching loads.

Key Specifications

Parameter Value Unit
Type Number PDTC123JT
Package SOT23 (TO-236AB)
Collector-Emitter Voltage (VCEO) 50 V
Collector Current (IC) 100 mA
Power Dissipation (Ptot) 250 mW
Junction Temperature (Tj) 150 °C
Resistor Values (R1, R2) 2.2 kΩ, 47 kΩ
Moisture Sensitivity Level (MSL) 1
RoHS Compliance Yes

Key Features

  • 100 mA Output Current Capability: Supports a significant current flow, making it suitable for various applications.
  • Built-in Bias Resistors: Includes internal resistors (R1 = 2.2 kΩ, R2 = 47 kΩ) which simplify circuit design and reduce the need for external components.
  • Compact SOT23 Package: Small footprint in a surface-mounted device (SMD) package, ideal for space-constrained designs.
  • Cost-Effective: Reduces component count and pick-and-place costs, making it a cost-saving alternative to other transistors like the BC847 series.
  • Environmental Compliance: Compliant with RoHS, REACH, and ELV directives, ensuring it meets environmental regulations.

Applications

  • Digital Applications in Industrial Segments: Suitable for controlling IC inputs and switching loads in industrial environments.
  • Automotive and Industrial Electronics: Can be used in various automotive and industrial electronic systems due to its robust specifications.
  • Consumer and Mobile Devices: Applicable in consumer electronics and mobile devices where compact, efficient transistors are required.
  • Power and Computing Systems: Useful in power management and computing systems where reliable transistor performance is crucial.

Q & A

  1. What is the collector-emitter voltage (VCEO) of the PDTC123JT,215 transistor?

    The collector-emitter voltage (VCEO) is 50 V.

  2. What is the maximum collector current (IC) of the PDTC123JT,215?

    The maximum collector current (IC) is 100 mA.

  3. What package type is the PDTC123JT,215 available in?

    The PDTC123JT,215 is available in the SOT23 (TO-236AB) package.

  4. Does the PDTC123JT,215 have built-in bias resistors?

    Yes, it includes built-in bias resistors with values R1 = 2.2 kΩ and R2 = 47 kΩ.

  5. Is the PDTC123JT,215 RoHS compliant?

    Yes, the PDTC123JT,215 is compliant with RoHS, REACH, and ELV directives.

  6. What are the typical applications of the PDTC123JT,215 transistor?

    It is typically used in digital applications in industrial segments, controlling IC inputs, and switching loads.

  7. What is the junction temperature (Tj) of the PDTC123JT,215?

    The junction temperature (Tj) is 150 °C.

  8. Is the PDTC123JT,215 a cost-effective alternative to other transistors?

    Yes, it reduces component count and pick-and-place costs, making it a cost-saving alternative to transistors like the BC847 series.

  9. What is the moisture sensitivity level (MSL) of the PDTC123JT,215?

    The moisture sensitivity level (MSL) is 1.

  10. Does Nexperia provide evaluation boards for the PDTC123JT,215?

    Yes, Nexperia offers various evaluation boards and design support tools to help with the integration of their products.

Product Attributes

Transistor Type:NPN - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):2.2 kOhms
Resistor - Emitter Base (R2):47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:100mV @ 250µA, 5mA
Current - Collector Cutoff (Max):1µA
Frequency - Transition:- 
Power - Max:250 mW
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:TO-236AB
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Similar Products

Part Number PDTC123JT,215 PDTC123JT,235 PDTC123TT,215 PDTC123YT,215 PDTC123ET,215
Manufacturer Nexperia USA Inc. Nexperia USA Inc. NXP USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active Active Active
Transistor Type NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 50 V 50 V 50 V
Resistor - Base (R1) 2.2 kOhms 2.2 kOhms 2.2 kOhms 2.2 kOhms 2.2 kOhms
Resistor - Emitter Base (R2) 47 kOhms 47 kOhms - 10 kOhms 2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 5V 100 @ 10mA, 5V 30 @ 20mA, 5V 35 @ 5mA, 5V 30 @ 20mA, 5V
Vce Saturation (Max) @ Ib, Ic 100mV @ 250µA, 5mA 100mV @ 250µA, 5mA 150mV @ 500µA, 10mA 150mV @ 500µA, 10mA 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 1µA 1µA 1µA 1µA 1µA
Frequency - Transition - - - - -
Power - Max 250 mW 250 mW 250 mW 250 mW 250 mW
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package TO-236AB TO-236AB SOT-23 TO-236AB TO-236AB

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