PDTC123TT,215
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NXP USA Inc. PDTC123TT,215

Manufacturer No:
PDTC123TT,215
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
NOW NEXPERIA PDTC123TT - SMALL S
Delivery:
Payment:
iso14001
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Product Introduction

Overview

The PDTC123TT,215 is a pre-biased NPN bipolar transistor manufactured by NXP USA Inc. This component is part of the NPN resistor-equipped transistors (RET) family and is packaged in a surface-mounted device (SMD) plastic package, specifically the SOT23 (TO-236AB) package. The transistor is designed to simplify circuit design by integrating built-in bias resistors, reducing the overall component count and pick-and-place costs. It is AEC-Q101 qualified, making it suitable for automotive and other demanding applications.

Key Specifications

Parameter Value Unit
Type Number PDTC123TT -
Orderable Part Number PDTC123TT,215 -
Package SOT23 (TO-236AB) -
Size (mm) 2.9 x 1.3 x 1 mm
Collector Current (Ic) Max 100 mA
Base-Emitter Resistor (R1) 2.2
Collector-Emitter Breakdown Voltage (Vceo) 50 V
Saturation Voltage (Vce Sat) Max @ Ib, Ic 150 mV @ 500 µA, 10 mA mV
Power Dissipation (Ptot) 250 mW
DC Current Gain (hFE) Min @ Ic, Vce 30 @ 20 mA, 5 V -
Collector Cutoff Current Max 1 µA µA

Key Features

  • Built-in bias resistors (R1 = 2.2 kΩ, R2 = open) to simplify circuit design and reduce component count.
  • Surface-mounted device (SMD) in SOT23 (TO-236AB) package.
  • AEC-Q101 qualified, suitable for automotive and other demanding applications.
  • 100 mA output current capability.
  • Reduces pick and place costs due to integrated resistors.
  • Cost-saving alternative for BC847 series in digital applications.

Applications

  • Digital applications.
  • Control of IC inputs.
  • Switching loads.
  • Automotive applications due to AEC-Q101 qualification.
  • Industrial and consumer electronics where simplified circuit design and reduced component count are beneficial.

Q & A

  1. What is the package type of the PDTC123TT,215?

    The PDTC123TT,215 is packaged in a SOT23 (TO-236AB) surface-mounted device (SMD) package.

  2. What is the maximum collector current (Ic) of the PDTC123TT,215?

    The maximum collector current (Ic) is 100 mA.

  3. What is the value of the built-in base-emitter resistor (R1)?

    The built-in base-emitter resistor (R1) is 2.2 kΩ.

  4. What is the collector-emitter breakdown voltage (Vceo) of the PDTC123TT,215?

    The collector-emitter breakdown voltage (Vceo) is 50 V.

  5. Is the PDTC123TT,215 AEC-Q101 qualified?
  6. What is the power dissipation (Ptot) of the PDTC123TT,215?

    The power dissipation (Ptot) is 250 mW.

  7. What is the DC current gain (hFE) of the PDTC123TT,215?

    The DC current gain (hFE) is 30 @ 20 mA, 5 V.

  8. What are the typical applications of the PDTC123TT,215?

    The PDTC123TT,215 is typically used in digital applications, control of IC inputs, switching loads, and automotive applications.

  9. How does the PDTC123TT,215 simplify circuit design?

    The PDTC123TT,215 simplifies circuit design by integrating built-in bias resistors, reducing the overall component count and pick-and-place costs.

  10. Is the PDTC123TT,215 a cost-saving alternative for other transistor series?

Product Attributes

Transistor Type:NPN - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):2.2 kOhms
Resistor - Emitter Base (R2):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 20mA, 5V
Vce Saturation (Max) @ Ib, Ic:150mV @ 500µA, 10mA
Current - Collector Cutoff (Max):1µA
Frequency - Transition:- 
Power - Max:250 mW
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23
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Similar Products

Part Number PDTC123TT,215 PDTC124TT,215 PDTC123YT,215 PDTC123TT,235 PDTB123TT,215 PDTC123ET,215 PDTC123JT,215
Manufacturer NXP USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active Active Active Active Active
Transistor Type NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased PNP - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA 500 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 50 V 50 V 50 V 50 V 50 V
Resistor - Base (R1) 2.2 kOhms 22 kOhms 2.2 kOhms 2.2 kOhms 2.2 kOhms 2.2 kOhms 2.2 kOhms
Resistor - Emitter Base (R2) - - 10 kOhms - - 2.2 kOhms 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 20mA, 5V 100 @ 1mA, 5V 35 @ 5mA, 5V 30 @ 20mA, 5V 100 @ 50mA, 5V 30 @ 20mA, 5V 100 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 10mA 150mV @ 500µA, 10mA 150mV @ 500µA, 10mA 150mV @ 500µA, 10mA 300mV @ 2.5mA, 50mA 150mV @ 500µA, 10mA 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 1µA 1µA 1µA 1µA 500nA 1µA 1µA
Frequency - Transition - - - - - - -
Power - Max 250 mW 250 mW 250 mW 250 mW 250 mW 250 mW 250 mW
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23 TO-236AB TO-236AB TO-236AB TO-236AB TO-236AB TO-236AB

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