Overview
The PDTC123TT,215 is a pre-biased NPN bipolar transistor manufactured by NXP USA Inc. This component is part of the NPN resistor-equipped transistors (RET) family and is packaged in a surface-mounted device (SMD) plastic package, specifically the SOT23 (TO-236AB) package. The transistor is designed to simplify circuit design by integrating built-in bias resistors, reducing the overall component count and pick-and-place costs. It is AEC-Q101 qualified, making it suitable for automotive and other demanding applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Type Number | PDTC123TT | - |
| Orderable Part Number | PDTC123TT,215 | - |
| Package | SOT23 (TO-236AB) | - |
| Size (mm) | 2.9 x 1.3 x 1 | mm |
| Collector Current (Ic) Max | 100 | mA |
| Base-Emitter Resistor (R1) | 2.2 | kΩ |
| Collector-Emitter Breakdown Voltage (Vceo) | 50 | V |
| Saturation Voltage (Vce Sat) Max @ Ib, Ic | 150 mV @ 500 µA, 10 mA | mV |
| Power Dissipation (Ptot) | 250 | mW |
| DC Current Gain (hFE) Min @ Ic, Vce | 30 @ 20 mA, 5 V | - |
| Collector Cutoff Current Max | 1 µA | µA |
Key Features
- Built-in bias resistors (R1 = 2.2 kΩ, R2 = open) to simplify circuit design and reduce component count.
- Surface-mounted device (SMD) in SOT23 (TO-236AB) package.
- AEC-Q101 qualified, suitable for automotive and other demanding applications.
- 100 mA output current capability.
- Reduces pick and place costs due to integrated resistors.
- Cost-saving alternative for BC847 series in digital applications.
Applications
- Digital applications.
- Control of IC inputs.
- Switching loads.
- Automotive applications due to AEC-Q101 qualification.
- Industrial and consumer electronics where simplified circuit design and reduced component count are beneficial.
Q & A
- What is the package type of the PDTC123TT,215?
The PDTC123TT,215 is packaged in a SOT23 (TO-236AB) surface-mounted device (SMD) package.
- What is the maximum collector current (Ic) of the PDTC123TT,215?
The maximum collector current (Ic) is 100 mA.
- What is the value of the built-in base-emitter resistor (R1)?
The built-in base-emitter resistor (R1) is 2.2 kΩ.
- What is the collector-emitter breakdown voltage (Vceo) of the PDTC123TT,215?
The collector-emitter breakdown voltage (Vceo) is 50 V.
- Is the PDTC123TT,215 AEC-Q101 qualified?
- What is the power dissipation (Ptot) of the PDTC123TT,215?
The power dissipation (Ptot) is 250 mW.
- What is the DC current gain (hFE) of the PDTC123TT,215?
The DC current gain (hFE) is 30 @ 20 mA, 5 V.
- What are the typical applications of the PDTC123TT,215?
The PDTC123TT,215 is typically used in digital applications, control of IC inputs, switching loads, and automotive applications.
- How does the PDTC123TT,215 simplify circuit design?
The PDTC123TT,215 simplifies circuit design by integrating built-in bias resistors, reducing the overall component count and pick-and-place costs.
- Is the PDTC123TT,215 a cost-saving alternative for other transistor series?
