Overview
The onsemi MUN5235T1G is an NPN digital transistor designed with a monolithic bias resistor network. This device integrates a single transistor with built-in bias resistors, simplifying circuit design and reducing the need for external components. It is packaged in a compact SOT-323 (SC-70) surface mount package, making it ideal for space-constrained applications. The MUN5235T1G is suitable for a variety of digital switching and amplification tasks due to its robust specifications and ease of use.
Key Specifications
| Specification | Value |
|---|---|
| Manufacturer | onsemi |
| Transistor Type | NPN |
| Maximum DC Collector Current | 100 mA |
| Maximum Collector-Emitter Voltage | 50 V |
| Package Type | SOT-323 (SC-70) |
| Mounting Type | Surface Mount |
| Maximum Power Dissipation | 310 mW |
| Transistor Configuration | Single |
| Pin Count | 3 |
| Number of Elements per Chip | 1 |
| Typical Resistor Ratio (R1/R2) | 0.047 |
| Base-Emitter Resistor (R2) | 47 kΩ |
| Typical Input Resistor (R1) | 2.2 kΩ |
| Maximum Operating Temperature | +150 °C |
| Dimensions | 2.2 x 1.35 x 0.9 mm |
Key Features
- Integrated Bias Resistor Network: The MUN5235T1G includes a monolithic bias network consisting of two resistors, a series base resistor (R1) and a base-emitter resistor (R2), which simplifies circuit design and reduces component count.
- Compact Packaging: The SOT-323 (SC-70) package is small and suitable for surface mount applications, reducing board space.
- High Reliability: The device is designed to operate reliably with a maximum operating temperature of +150 °C and a maximum collector-emitter voltage of 50 V.
- Low Power Dissipation: With a maximum power dissipation of 310 mW, this transistor is energy-efficient and suitable for low-power applications.
- Current Gain: The transistor has a forward current transfer ratio (hFE) with a minimum value of 80, ensuring reliable current amplification.
Applications
- Digital Switching: The MUN5235T1G is ideal for digital switching applications due to its integrated bias resistors and high reliability.
- Amplification: It can be used in various amplification circuits where a compact, low-power transistor is required.
- Automotive and Industrial Control: With its robust specifications, it is suitable for use in automotive and industrial control systems that require reliable and compact components.
- Consumer Electronics: The transistor can be used in consumer electronics such as audio equipment, power supplies, and other electronic devices where space and power efficiency are critical.
Q & A
- What is the maximum DC collector current of the MUN5235T1G?
The maximum DC collector current is 100 mA.
- What is the maximum collector-emitter voltage of the MUN5235T1G?
The maximum collector-emitter voltage is 50 V.
- What type of package does the MUN5235T1G use?
The MUN5235T1G is packaged in a SOT-323 (SC-70) surface mount package.
- What are the built-in bias resistors in the MUN5235T1G?
The device includes a 2.2 kΩ series base resistor (R1) and a 47 kΩ base-emitter resistor (R2).
- What is the maximum operating temperature of the MUN5235T1G?
The maximum operating temperature is +150 °C.
- What is the typical resistor ratio (R1/R2) of the MUN5235T1G?
The typical resistor ratio is 0.047.
- Is the MUN5235T1G suitable for automotive applications?
Yes, it is suitable for automotive and other applications requiring high reliability and compact design.
- What is the maximum power dissipation of the MUN5235T1G?
The maximum power dissipation is 310 mW.
- What is the forward current transfer ratio (hFE) of the MUN5235T1G?
The minimum forward current transfer ratio (hFE) is 80.
- Is the MUN5235T1G recommended for new designs?
No, the MUN5235T1G is not recommended for new designs. Please contact an onsemi representative for information on recommended alternatives.
