Overview
The MUN5135T1G is a digital transistor from onsemi, designed to integrate a single device with its external resistor bias network. This component is part of the MUN51xxT1 series, which offers a compact solution for various electronic applications. The MUN5135T1G is housed in a SC-70/SOT-323 package, making it suitable for space-constrained designs.
Key Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Base Cutoff Current | ICBO | - | - | 100 | nAdc |
| Collector-Emitter Cutoff Current | ICEO | - | - | 500 | nAdc |
| Emitter-Base Cutoff Current | IEBO | - | - | 0.13 | mAdc |
| Collector-Base Breakdown Voltage | V(BR)CBO | 50 | - | - | Vdc |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 50 | - | - | Vdc |
| DC Current Gain | hFE | 60 | 100 | 140 | - |
| Collector-Emitter Saturation Voltage | VCE(sat) | - | - | 0.25 | Vdc |
| Junction and Storage Temperature Range | TJ, Tstg | -55 | - | 150 | °C |
| Thermal Resistance, Junction-to-Ambient | RθJA | - | - | 618 | °C/W |
| Total Device Dissipation at TA = 25°C | PD | - | - | 202 | mW |
Key Features
- Integrated Bias Resistor: The MUN5135T1G includes an internal bias resistor, simplifying circuit design and reducing component count.
- Compact Package: Housed in a SC-70/SOT-323 package, making it ideal for space-constrained applications.
- High DC Current Gain: Offers a DC current gain (hFE) of up to 140, ensuring reliable operation in various circuits.
- Low Collector-Emitter Saturation Voltage: Features a low VCE(sat) of 0.25 V, which helps in minimizing power losses.
- Broad Temperature Range: Operates over a wide junction and storage temperature range of -55°C to 150°C.
Applications
- General Purpose Switching: Suitable for general-purpose switching applications due to its high current gain and low saturation voltage.
- Automotive Systems: Can be used in automotive systems where compact size and reliability are crucial.
- Consumer Electronics: Ideal for use in consumer electronics such as audio equipment, home appliances, and other electronic devices.
- Industrial Control Systems: Used in industrial control systems where space is limited and reliability is essential.
Q & A
- What is the package type of the MUN5135T1G?
The MUN5135T1G is housed in a SC-70/SOT-323 package.
- What is the maximum collector-emitter breakdown voltage of the MUN5135T1G?
The maximum collector-emitter breakdown voltage is 50 Vdc.
- What is the typical DC current gain (hFE) of the MUN5135T1G?
The typical DC current gain (hFE) is 100.
- What is the collector-emitter saturation voltage (VCE(sat)) of the MUN5135T1G?
The collector-emitter saturation voltage (VCE(sat)) is 0.25 Vdc.
- What is the junction and storage temperature range of the MUN5135T1G?
The junction and storage temperature range is -55°C to 150°C.
- What is the thermal resistance, junction-to-ambient (RθJA) of the MUN5135T1G?
The thermal resistance, junction-to-ambient (RθJA), is 618 °C/W.
- What is the total device dissipation at TA = 25°C for the MUN5135T1G?
The total device dissipation at TA = 25°C is 202 mW.
- What are the typical applications of the MUN5135T1G?
The MUN5135T1G is suitable for general-purpose switching, automotive systems, consumer electronics, and industrial control systems.
- Does the MUN5135T1G include an internal bias resistor?
Yes, the MUN5135T1G includes an internal bias resistor.
- Why is the MUN5135T1G preferred in space-constrained designs?
The MUN5135T1G is preferred in space-constrained designs due to its compact SC-70/SOT-323 package.
