DTC143ZET1G
  • Share:

onsemi DTC143ZET1G

Manufacturer No:
DTC143ZET1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS NPN 50V 100MA SC75
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The DTC143ZET1G is a pre-biased digital bipolar transistor produced by onsemi. This device is part of the Bias Resistor Transistor (BRT) series, designed to integrate a single transistor with a monolithic bias resistor network, thereby simplifying circuit design, reducing board space, and minimizing component count. The DTC143ZET1G is particularly useful in applications where space is limited and simplicity in design is crucial.

Key Specifications

Characteristic Symbol Min Typ Max Unit
Collector-Base Breakdown Voltage V(BR)CBO 50 - - Vdc
Collector-Emitter Breakdown Voltage V(BR)CEO 50 - - Vdc
DC Current Gain hFE 80 200 - -
Collector-Emitter Saturation Voltage VCE(sat) - - 0.25 Vdc
Input Resistor R1 R1 3.3 4.7 6.1
Resistor Ratio R1/R2 R1/R2 0.08 0.1 0.12 -
Total Device Dissipation at TA = 25°C PD 200 - 300 mW
Thermal Resistance, Junction to Ambient RθJA 600 - - °C/W
Junction and Storage Temperature Range TJ, Tstg -55 - 150 °C

Key Features

  • Simplifies Circuit Design: Integrates a single transistor with a monolithic bias resistor network, reducing the need for external resistors.
  • Reduces Board Space: Compact packaging options such as SC-75, SOT-23, and others minimize board real estate.
  • Reduces Component Count: By integrating the bias resistors into the transistor, the overall component count in the circuit is reduced.
  • Pb-Free Packages: Available in lead-free packages, making it suitable for applications requiring environmental compliance.
  • AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring high reliability and quality standards.

Applications

  • Automotive Systems: Due to its AEC-Q101 qualification, it is suitable for use in automotive electronics.
  • Industrial Control Systems: Can be used in various industrial control circuits where space and simplicity are important.
  • Consumer Electronics: Applicable in consumer electronic devices where compact design and reduced component count are beneficial.
  • Medical Devices: Suitable for medical devices requiring reliable and compact electronic components.

Q & A

  1. What is the DTC143ZET1G?

    The DTC143ZET1G is a pre-biased digital bipolar transistor with an integrated monolithic bias resistor network.

  2. What are the key benefits of using the DTC143ZET1G?

    It simplifies circuit design, reduces board space, and minimizes component count.

  3. What is the maximum collector-base breakdown voltage of the DTC143ZET1G?

    The maximum collector-base breakdown voltage is 50 Vdc.

  4. What is the typical DC current gain of the DTC143ZET1G?

    The typical DC current gain (hFE) is 200.

  5. What is the collector-emitter saturation voltage of the DTC143ZET1G?

    The collector-emitter saturation voltage (VCE(sat)) is 0.25 Vdc.

  6. What are the thermal characteristics of the DTC143ZET1G?

    The total device dissipation at TA = 25°C is 200 mW, and the thermal resistance, junction to ambient, is 600 °C/W.

  7. Is the DTC143ZET1G Pb-free?

    Yes, the DTC143ZET1G is available in Pb-free packages.

  8. Is the DTC143ZET1G suitable for automotive applications?

    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other high-reliability applications.

  9. What are the common applications of the DTC143ZET1G?

    It is commonly used in automotive systems, industrial control systems, consumer electronics, and medical devices.

  10. What is the junction and storage temperature range of the DTC143ZET1G?

    The junction and storage temperature range is -55°C to 150°C.

Product Attributes

Transistor Type:NPN - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):4.7 kOhms
Resistor - Emitter Base (R2):47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:250mV @ 1mA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:- 
Power - Max:200 mW
Mounting Type:Surface Mount
Package / Case:SC-75, SOT-416
Supplier Device Package:SC-75, SOT-416
0 Remaining View Similar

In Stock

$0.19
3,593

Please send RFQ , we will respond immediately.

Same Series
NSVMMUN2233LT3G
NSVMMUN2233LT3G
NSVMMUN2233 - NPN BIPOLAR DIGITA
NSVDTC143ZM3T5G
NSVDTC143ZM3T5G
NSVDTC143ZM3 - NPN BIPOLAR DIGIT
MUN5233T1G
MUN5233T1G
TRANS PREBIAS NPN 50V SC70-3
SMMUN2233LT1G
SMMUN2233LT1G
TRANS PREBIAS NPN 0.246W SOT23
SMUN5233T1G
SMUN5233T1G
TRANS PREBIAS NPN 50V SC70-3
MMUN2233LT1G
MMUN2233LT1G
TRANS PREBIAS NPN 50V SOT23-3
DTC143ZET1G
DTC143ZET1G
TRANS PREBIAS NPN 50V 100MA SC75
DTC143ZM3T5G
DTC143ZM3T5G
TRANS PREBIAS NPN 50V SOT723
NSVDTC143ZET1G
NSVDTC143ZET1G
TRANS PREBIAS NPN 50V 100MA SC75
NSBC143ZF3T5G
NSBC143ZF3T5G
TRANS PREBIAS NPN 50V SOT1123

Similar Products

Part Number DTC143ZET1G DTC143EET1G DTC143TET1G DTC143ZET1
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Active Obsolete
Transistor Type NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased -
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA -
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 50 V -
Resistor - Base (R1) 4.7 kOhms 4.7 kOhms 4.7 kOhms -
Resistor - Emitter Base (R2) 47 kOhms 4.7 kOhms - -
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V 15 @ 5mA, 10V 160 @ 5mA, 10V -
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA 250mV @ 1mA, 10mA 250mV @ 1mA, 10mA -
Current - Collector Cutoff (Max) 500nA 500nA 500nA -
Frequency - Transition - - - -
Power - Max 200 mW 200 mW 200 mW -
Mounting Type Surface Mount Surface Mount Surface Mount -
Package / Case SC-75, SOT-416 SC-75, SOT-416 SC-75, SOT-416 -
Supplier Device Package SC-75, SOT-416 SC-75, SOT-416 SC-75, SOT-416 -

Related Product By Categories

PDTC114TT,235
PDTC114TT,235
Nexperia USA Inc.
TRANS PREBIAS NPN 50V TO236AB
DTC114YET1G
DTC114YET1G
onsemi
TRANS PREBIAS NPN 50V 100MA SC75
SMMUN2114LT1G
SMMUN2114LT1G
onsemi
TRANS PREBIAS PNP 50V SOT23-3
SMUN5235T1G
SMUN5235T1G
onsemi
TRANS PREBIAS NPN 202MW SC70-3
MMUN2213LT1G
MMUN2213LT1G
onsemi
TRANS PREBIAS NPN 50V SOT23-3
MMUN2215LT1G
MMUN2215LT1G
onsemi
TRANS PREBIAS NPN 50V SOT23-3
MMUN2216LT1G
MMUN2216LT1G
onsemi
TRANS PREBIAS NPN 50V SOT23-3
MMUN2111LT1G
MMUN2111LT1G
onsemi
TRANS PREBIAS PNP 50V SOT23-3
SDTC114EET1G
SDTC114EET1G
onsemi
TRANS PREBIAS NPN 50V 100MA SC75
MUN5135T1G
MUN5135T1G
onsemi
TRANS PREBIAS PNP 50V SC70-3
MUN5237T1G
MUN5237T1G
onsemi
TRANS PREBIAS NPN 50V SC70-3
DTA123JET1G
DTA123JET1G
onsemi
TRANS PREBIAS PNP 50V 100MA SC75

Related Product By Brand

SURA8210T3G
SURA8210T3G
onsemi
DIODE GEN PURP 100V 2A SMA
BZX84C24ET1G
BZX84C24ET1G
onsemi
DIODE ZENER 24V 225MW SOT23-3
MM5Z6V2T1G
MM5Z6V2T1G
onsemi
DIODE ZENER 6.2V 500MW SOD523
2N3773G
2N3773G
onsemi
TRANS NPN 140V 16A TO204
FDG6332C
FDG6332C
onsemi
MOSFET N/P-CH 20V SC70-6
NTK3043NT1G
NTK3043NT1G
onsemi
MOSFET N-CH 20V 210MA SOT723
FDMS86350ET80
FDMS86350ET80
onsemi
MOSFET N-CH 80V 25A/198A POWER56
NB3U1548CDR2G
NB3U1548CDR2G
onsemi
IC CLK BUFFER 160MHZ 8SOIC
NCD9830DBR2G
NCD9830DBR2G
onsemi
IC ADC 8BIT SAR 16TSSOP
MC74HC04AFL1
MC74HC04AFL1
onsemi
IC INVERTER 6CH 1-INP SOEIAJ-14
MC33025DWR2
MC33025DWR2
onsemi
IC OFFLINE SW HALF-BRDG 16SOIC
LC898121XA-MH
LC898121XA-MH
onsemi
IC MOTOR DRVR 2.6V-3.6V 40WLCSP