DTC143ZET1G
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onsemi DTC143ZET1G

Manufacturer No:
DTC143ZET1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS NPN 50V 100MA SC75
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The DTC143ZET1G is a pre-biased digital bipolar transistor produced by onsemi. This device is part of the Bias Resistor Transistor (BRT) series, designed to integrate a single transistor with a monolithic bias resistor network, thereby simplifying circuit design, reducing board space, and minimizing component count. The DTC143ZET1G is particularly useful in applications where space is limited and simplicity in design is crucial.

Key Specifications

Characteristic Symbol Min Typ Max Unit
Collector-Base Breakdown Voltage V(BR)CBO 50 - - Vdc
Collector-Emitter Breakdown Voltage V(BR)CEO 50 - - Vdc
DC Current Gain hFE 80 200 - -
Collector-Emitter Saturation Voltage VCE(sat) - - 0.25 Vdc
Input Resistor R1 R1 3.3 4.7 6.1 kΩ
Resistor Ratio R1/R2 R1/R2 0.08 0.1 0.12 -
Total Device Dissipation at TA = 25°C PD 200 - 300 mW
Thermal Resistance, Junction to Ambient RθJA 600 - - °C/W
Junction and Storage Temperature Range TJ, Tstg -55 - 150 °C

Key Features

  • Simplifies Circuit Design: Integrates a single transistor with a monolithic bias resistor network, reducing the need for external resistors.
  • Reduces Board Space: Compact packaging options such as SC-75, SOT-23, and others minimize board real estate.
  • Reduces Component Count: By integrating the bias resistors into the transistor, the overall component count in the circuit is reduced.
  • Pb-Free Packages: Available in lead-free packages, making it suitable for applications requiring environmental compliance.
  • AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring high reliability and quality standards.

Applications

  • Automotive Systems: Due to its AEC-Q101 qualification, it is suitable for use in automotive electronics.
  • Industrial Control Systems: Can be used in various industrial control circuits where space and simplicity are important.
  • Consumer Electronics: Applicable in consumer electronic devices where compact design and reduced component count are beneficial.
  • Medical Devices: Suitable for medical devices requiring reliable and compact electronic components.

Q & A

  1. What is the DTC143ZET1G?

    The DTC143ZET1G is a pre-biased digital bipolar transistor with an integrated monolithic bias resistor network.

  2. What are the key benefits of using the DTC143ZET1G?

    It simplifies circuit design, reduces board space, and minimizes component count.

  3. What is the maximum collector-base breakdown voltage of the DTC143ZET1G?

    The maximum collector-base breakdown voltage is 50 Vdc.

  4. What is the typical DC current gain of the DTC143ZET1G?

    The typical DC current gain (hFE) is 200.

  5. What is the collector-emitter saturation voltage of the DTC143ZET1G?

    The collector-emitter saturation voltage (VCE(sat)) is 0.25 Vdc.

  6. What are the thermal characteristics of the DTC143ZET1G?

    The total device dissipation at TA = 25°C is 200 mW, and the thermal resistance, junction to ambient, is 600 °C/W.

  7. Is the DTC143ZET1G Pb-free?

    Yes, the DTC143ZET1G is available in Pb-free packages.

  8. Is the DTC143ZET1G suitable for automotive applications?

    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other high-reliability applications.

  9. What are the common applications of the DTC143ZET1G?

    It is commonly used in automotive systems, industrial control systems, consumer electronics, and medical devices.

  10. What is the junction and storage temperature range of the DTC143ZET1G?

    The junction and storage temperature range is -55°C to 150°C.

Product Attributes

Transistor Type:NPN - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):4.7 kOhms
Resistor - Emitter Base (R2):47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:250mV @ 1mA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:- 
Power - Max:200 mW
Mounting Type:Surface Mount
Package / Case:SC-75, SOT-416
Supplier Device Package:SC-75, SOT-416
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Similar Products

Part Number DTC143ZET1G DTC143EET1G DTC143TET1G DTC143ZET1
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Active Obsolete
Transistor Type NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased -
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA -
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 50 V -
Resistor - Base (R1) 4.7 kOhms 4.7 kOhms 4.7 kOhms -
Resistor - Emitter Base (R2) 47 kOhms 4.7 kOhms - -
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V 15 @ 5mA, 10V 160 @ 5mA, 10V -
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA 250mV @ 1mA, 10mA 250mV @ 1mA, 10mA -
Current - Collector Cutoff (Max) 500nA 500nA 500nA -
Frequency - Transition - - - -
Power - Max 200 mW 200 mW 200 mW -
Mounting Type Surface Mount Surface Mount Surface Mount -
Package / Case SC-75, SOT-416 SC-75, SOT-416 SC-75, SOT-416 -
Supplier Device Package SC-75, SOT-416 SC-75, SOT-416 SC-75, SOT-416 -

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