PDTC115EE,115
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NXP USA Inc. PDTC115EE,115

Manufacturer No:
PDTC115EE,115
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS NPN 150MW SC75
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The PDTC115EE,115 is a pre-biased NPN bipolar transistor manufactured by NXP USA Inc. Although this component is currently obsolete and no longer in production, it remains relevant for existing designs and maintenance of older systems. The transistor is packaged in an SC-75 (SOT-416) surface mount case, making it suitable for compact and efficient circuit designs.

Key Specifications

Parameter Value
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 20mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) (Ohms) 100k
Resistor - Emitter Base (R2) (Ohms) 100k
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 1µA
Power - Max 150mW
Mounting Type Surface Mount
Package / Case SC-75, SOT-416

Key Features

  • Pre-biased configuration simplifies circuit design by integrating base resistors.
  • Compact SC-75 (SOT-416) surface mount package for space-efficient designs.
  • Maximum collector current of 20mA and collector-emitter breakdown voltage of 50V.
  • DC current gain (hFE) of 80 at 5mA and 5V, ensuring reliable amplification.
  • Low Vce saturation of 150mV at 250µA and 5mA, minimizing power losses.

Applications

The PDTC115EE,115 is suitable for a variety of applications requiring pre-biased NPN transistors, including:

  • General-purpose amplification and switching circuits.
  • Audio and signal processing circuits where compact size is crucial.
  • Automotive and industrial control systems requiring reliable and efficient transistor performance.
  • Consumer electronics such as home appliances and portable devices.

Q & A

  1. What is the transistor type of the PDTC115EE,115?

    The PDTC115EE,115 is an NPN pre-biased bipolar transistor.

  2. What is the maximum collector current of the PDTC115EE,115?

    The maximum collector current is 20mA.

  3. What is the collector-emitter breakdown voltage of the PDTC115EE,115?

    The collector-emitter breakdown voltage is 50V.

  4. What are the values of the integrated base and emitter-base resistors?

    Both the base resistor (R1) and the emitter-base resistor (R2) are 100kΩ..

  5. What is the DC current gain (hFE) of the PDTC115EE,115?

    The DC current gain (hFE) is 80 at 5mA and 5V.

  6. What is the Vce saturation voltage of the PDTC115EE,115?

    The Vce saturation voltage is 150mV at 250µA and 5mA.

  7. What is the maximum power dissipation of the PDTC115EE,115?

    The maximum power dissipation is 150mW.

  8. What type of packaging does the PDTC115EE,115 use?

    The PDTC115EE,115 is packaged in an SC-75 (SOT-416) surface mount case.

  9. Is the PDTC115EE,115 still in production?

    No, the PDTC115EE,115 is obsolete and no longer manufactured.

  10. Where can I find substitutes for the PDTC115EE,115?

    Substitutes can be found through suppliers like Digi-Key, which lists similar components.

Product Attributes

Transistor Type:NPN - Pre-Biased
Current - Collector (Ic) (Max):20 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):100 kOhms
Resistor - Emitter Base (R2):100 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:150mV @ 250µA, 5mA
Current - Collector Cutoff (Max):1µA
Frequency - Transition:- 
Power - Max:150 mW
Mounting Type:Surface Mount
Package / Case:SC-75, SOT-416
Supplier Device Package:SC-75
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Similar Products

Part Number PDTC115EE,115 PDTC115EU,115 PDTC115TE,115 PDTC115EEF,115 PDTC115EK,115 PDTC114EE,115
Manufacturer NXP USA Inc. Nexperia USA Inc. NXP USA Inc. NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Obsolete Active Obsolete Obsolete Obsolete Obsolete
Transistor Type NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased
Current - Collector (Ic) (Max) 20 mA 20 mA 100 mA 20 mA 20 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 50 V 50 V 50 V 50 V
Resistor - Base (R1) 100 kOhms 100 kOhms 100 kOhms 100 kOhms 100 kOhms 10 kOhms
Resistor - Emitter Base (R2) 100 kOhms 100 kOhms - 100 kOhms 100 kOhms 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 5V 80 @ 5mA, 5V 100 @ 1mA, 5V 80 @ 5mA, 5V 80 @ 5mA, 5V 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 150mV @ 250µA, 5mA 150mV @ 250µA, 5mA 150mV @ 250µA, 5mA 150mV @ 250µA, 5mA 150mV @ 250µA, 5mA 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 1µA 1µA 1µA 1µA 1µA 1µA
Frequency - Transition - - - - - 230 MHz
Power - Max 150 mW 200 mW 150 mW 250 mW 250 mW 150 mW
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SC-75, SOT-416 SC-70, SOT-323 SC-75, SOT-416 SC-89, SOT-490 TO-236-3, SC-59, SOT-23-3 SC-75, SOT-416
Supplier Device Package SC-75 SOT-323 SC-75 SC-89 SMT3; MPAK SC-75

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