Overview
The PDTC115EE,115 is a pre-biased NPN bipolar transistor manufactured by NXP USA Inc. Although this component is currently obsolete and no longer in production, it remains relevant for existing designs and maintenance of older systems. The transistor is packaged in an SC-75 (SOT-416) surface mount case, making it suitable for compact and efficient circuit designs.
Key Specifications
Parameter | Value |
---|---|
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 20mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 100k |
Resistor - Emitter Base (R2) (Ohms) | 100k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 150mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 1µA |
Power - Max | 150mW |
Mounting Type | Surface Mount |
Package / Case | SC-75, SOT-416 |
Key Features
- Pre-biased configuration simplifies circuit design by integrating base resistors.
- Compact SC-75 (SOT-416) surface mount package for space-efficient designs.
- Maximum collector current of 20mA and collector-emitter breakdown voltage of 50V.
- DC current gain (hFE) of 80 at 5mA and 5V, ensuring reliable amplification.
- Low Vce saturation of 150mV at 250µA and 5mA, minimizing power losses.
Applications
The PDTC115EE,115 is suitable for a variety of applications requiring pre-biased NPN transistors, including:
- General-purpose amplification and switching circuits.
- Audio and signal processing circuits where compact size is crucial.
- Automotive and industrial control systems requiring reliable and efficient transistor performance.
- Consumer electronics such as home appliances and portable devices.
Q & A
- What is the transistor type of the PDTC115EE,115?
The PDTC115EE,115 is an NPN pre-biased bipolar transistor.
- What is the maximum collector current of the PDTC115EE,115?
The maximum collector current is 20mA.
- What is the collector-emitter breakdown voltage of the PDTC115EE,115?
The collector-emitter breakdown voltage is 50V.
- What are the values of the integrated base and emitter-base resistors?
Both the base resistor (R1) and the emitter-base resistor (R2) are 100kΩ..
- What is the DC current gain (hFE) of the PDTC115EE,115?
The DC current gain (hFE) is 80 at 5mA and 5V.
- What is the Vce saturation voltage of the PDTC115EE,115?
The Vce saturation voltage is 150mV at 250µA and 5mA.
- What is the maximum power dissipation of the PDTC115EE,115?
The maximum power dissipation is 150mW.
- What type of packaging does the PDTC115EE,115 use?
The PDTC115EE,115 is packaged in an SC-75 (SOT-416) surface mount case.
- Is the PDTC115EE,115 still in production?
No, the PDTC115EE,115 is obsolete and no longer manufactured.
- Where can I find substitutes for the PDTC115EE,115?
Substitutes can be found through suppliers like Digi-Key, which lists similar components.