MMUN2132LT1G
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onsemi MMUN2132LT1G

Manufacturer No:
MMUN2132LT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS PNP 50V SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMUN2132LT1G is a digital transistor produced by onsemi, designed to provide a compact and efficient solution for various electronic applications. This component is part of the BRT (Bipolar Resistor Transistor) family, which combines the functions of a transistor and resistors in a single package, simplifying circuit design and reducing component count.

Key Specifications

ParameterValue
Voltage Rating (VCE)50V
Collector Current (IC)100mA
Base Resistors (R1, R2)4.7kΩ each
Package TypeSOT-23
Power Dissipation (PD)246mW
Operating Temperature Range-55°C to 150°C

Key Features

  • Compact SOT-23 package, reducing board space requirements.
  • Integrated 4.7kΩ base resistors, simplifying circuit design and reducing external component count.
  • High voltage rating of 50V, making it suitable for a wide range of applications.
  • Low power dissipation of 246mW, contributing to energy efficiency.
  • Rugged operating temperature range from -55°C to 150°C, ensuring reliability in diverse environments.

Applications

  • General-purpose switching and amplification in electronic circuits.
  • Automotive systems requiring high reliability and temperature tolerance.
  • Consumer electronics such as audio equipment, home appliances, and gaming devices.
  • Industrial control systems and automation.
  • Medical devices where compact and reliable components are crucial.

Q & A

  1. What is the voltage rating of the MMUN2132LT1G?
    The voltage rating (VCE) of the MMUN2132LT1G is 50V.
  2. What is the collector current rating of the MMUN2132LT1G?
    The collector current (IC) rating is 100mA.
  3. What type of package does the MMUN2132LT1G use?
    The MMUN2132LT1G is packaged in a SOT-23 format.
  4. What are the values of the integrated base resistors in the MMUN2132LT1G?
    The integrated base resistors (R1 and R2) are each 4.7kΩ.
  5. What is the power dissipation of the MMUN2132LT1G?
    The power dissipation (PD) is 246mW.
  6. What is the operating temperature range of the MMUN2132LT1G?
    The operating temperature range is from -55°C to 150°C.
  7. Is the MMUN2132LT1G RoHS compliant?
    Yes, the MMUN2132LT1G is RoHS compliant.
  8. What are some common applications of the MMUN2132LT1G?
    Common applications include general-purpose switching, automotive systems, consumer electronics, industrial control systems, and medical devices.
  9. How does the MMUN2132LT1G simplify circuit design?
    The MMUN2132LT1G simplifies circuit design by integrating 4.7kΩ base resistors, reducing the need for external resistors.
  10. Where can I find detailed specifications for the MMUN2132LT1G?
    Detailed specifications can be found in the datasheet available on websites such as Mouser, DigiKey, and the onsemi official website.

Product Attributes

Transistor Type:PNP - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):4.7 kOhms
Resistor - Emitter Base (R2):4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:15 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:250mV @ 1mA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:- 
Power - Max:246 mW
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
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Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active Active Active Active Active Active Active Obsolete
Transistor Type PNP - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased NPN - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased -
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA -
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 50 V 50 V 50 V 50 V 50 V 50 V 50 V 50 V 50 V -
Resistor - Base (R1) 4.7 kOhms 47 kOhms 22 kOhms 2.2 kOhms 4.7 kOhms 4.7 kOhms 2.2 kOhms 100 kOhms 22 kOhms 1 kOhms 2.2 kOhms -
Resistor - Emitter Base (R2) 4.7 kOhms 22 kOhms 47 kOhms 47 kOhms 4.7 kOhms 47 kOhms - 100 kOhms 22 kOhms 1 kOhms 2.2 kOhms -
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 5mA, 10V 80 @ 5mA, 10V 80 @ 5mA, 10V 80 @ 5mA, 10V 15 @ 5mA, 10V 80 @ 5mA, 10V 160 @ 5mA, 10V 80 @ 5mA, 10V 60 @ 5mA, 10V 3 @ 5mA, 10V 8 @ 5mA, 10V -
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA 250mV @ 300µA, 10mA 250mV @ 1mA, 10mA 250mV @ 300µA, 10mA 250mV @ 1mA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 5mA, 10mA 250mV @ 5mA, 10mA -
Current - Collector Cutoff (Max) 500nA 500nA 500nA 500nA 500nA 500nA 500nA 500nA 500nA 500nA 500nA -
Frequency - Transition - - - - - - - - - - - -
Power - Max 246 mW 246 mW 246 mW 246 mW 246 mW 246 mW 246 mW 246 mW 246 mW 246 mW 246 mW -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount -
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 -
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) -

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