PDTC114ET,215
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Nexperia USA Inc. PDTC114ET,215

Manufacturer No:
PDTC114ET,215
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS NPN 250MW TO236AB
Delivery:
Payment:
iso14001
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Product Introduction

Overview

The PDTC114ET,215 is a 50 V, 100 mA NPN resistor-equipped transistor (RET) manufactured by Nexperia USA Inc. This component is packaged in a small SOT23 Surface-Mounted Device (SMD) plastic package, making it suitable for a variety of compact electronic designs. The transistor is designed with built-in bias resistors, which simplifies circuit design and reduces the component count and pick-and-place costs. It is particularly useful in digital applications within the automotive and industrial segments.

Key Specifications

Parameter Value Unit
Type Number PDTC114ET -
Package SOT23 -
Channel Type NPN -
Collector-Emitter Voltage (VCEO) 50 V
Maximum Collector Current (Ic) 100 mA
Transition Frequency (ft) 225 MHz
Maximum Power Dissipation (Ptot) 250 mW
Typical Base Resistors (R1, R2) 10 kΩ, 10 kΩ -
Junction Temperature (Tj) 150 °C
Automotive Qualified Yes -

Key Features

  • 100 mA output current capability
  • Built-in bias resistors (R1 = 10 kΩ, R2 = 10 kΩ)
  • Simplifies circuit design and reduces component count
  • Reduces pick and place costs
  • Cost-saving alternative for BC847 series in digital applications
  • Lead-free and halogen-free according to Nexperia's halogen-free definition
  • Compliant with EU RoHS and CN RoHS regulations

Applications

  • Digital applications in automotive and industrial segments
  • Controlling IC inputs
  • Switching loads
  • General-purpose digital switching

Q & A

  1. What is the package type of the PDTC114ET,215?

    The PDTC114ET,215 is packaged in a SOT23 Surface-Mounted Device (SMD) plastic package.

  2. What is the maximum collector current of the PDTC114ET,215?

    The maximum collector current is 100 mA.

  3. What is the collector-emitter voltage (VCEO) of the PDTC114ET,215?

    The collector-emitter voltage (VCEO) is 50 V.

  4. Does the PDTC114ET,215 have built-in bias resistors?

    Yes, it has built-in bias resistors (R1 = 10 kΩ, R2 = 10 kΩ).

  5. Is the PDTC114ET,215 compliant with RoHS regulations?

    Yes, it is compliant with EU RoHS and CN RoHS regulations.

  6. What are the typical applications of the PDTC114ET,215?

    It is used in digital applications in automotive and industrial segments, controlling IC inputs, and switching loads.

  7. What is the junction temperature (Tj) of the PDTC114ET,215?

    The junction temperature (Tj) is 150 °C.

  8. Is the PDTC114ET,215 lead-free and halogen-free?

    Yes, it is lead-free and halogen-free according to Nexperia's halogen-free definition.

  9. What is the transition frequency (ft) of the PDTC114ET,215?

    The transition frequency (ft) is 225 MHz.

  10. Does the PDTC114ET,215 have a PNP complement?

    Yes, the PNP complement is the PDTA114ET.

Product Attributes

Transistor Type:NPN - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):10 kOhms
Resistor - Emitter Base (R2):10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:150mV @ 500µA, 10mA
Current - Collector Cutoff (Max):1µA
Frequency - Transition:230 MHz
Power - Max:250 mW
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:TO-236AB
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Similar Products

Part Number PDTC114ET,215 PDTC114ET,235 PDTC124ET,215 PDTC114YT,215 PDTC115ET,215
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active Active Active
Transistor Type NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA 20 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 50 V 50 V 50 V
Resistor - Base (R1) 10 kOhms 10 kOhms 22 kOhms 10 kOhms 100 kOhms
Resistor - Emitter Base (R2) 10 kOhms 10 kOhms 22 kOhms 47 kOhms 100 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA, 5V 30 @ 5mA, 5V 60 @ 5mA, 5V 100 @ 5mA, 5V 80 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 10mA 150mV @ 500µA, 10mA 150mV @ 500µA, 10mA 100mV @ 250µA, 5mA 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 1µA 1µA 1µA 1µA 1µA
Frequency - Transition 230 MHz 230 MHz - - -
Power - Max 250 mW 250 mW 250 mW 250 mW 250 mW
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package TO-236AB TO-236AB TO-236AB TO-236AB TO-236AB

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