MMUN2112LT1G
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onsemi MMUN2112LT1G

Manufacturer No:
MMUN2112LT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS PNP 50V SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMUN2112LT1G is a pre-biased bipolar transistor (BJT) produced by onsemi. This device is part of the Bias Resistor Transistor (BRT) series, designed to replace a single transistor and its external resistor bias network with a single, integrated component. The MMUN2112LT1G incorporates a monolithic bias network consisting of two resistors: a series base resistor and a base-emitter resistor. This integration simplifies circuit design, reduces board space, and decreases the overall component count, making it an efficient solution for various electronic systems.

Key Specifications

Parameter Value Parameter Value
Part Status Active Compliance PbAHP
Case Outline 318-08 (SOT-23-3) MSL Type 1
MSL Temp (°C) 260 Container Type REEL
Container Qty. 3000 ON Target N
Polarity PNP IC Continuous (A) 0.1
V(BR)CEO Min (V) 50 hFE Min 60
R1 (kΩ) 22 R2 (kΩ) 22
R1/R2 Typ 1 Vi(off) Max (V) 0.8
Vi(on) Min (V) 2.5

Key Features

  • Simplifies Circuit Design: By integrating the bias resistors into the transistor, it reduces the complexity of the circuit.
  • Reduces Board Space: The integration of components into a single device minimizes the space required on the PCB.
  • Reduces Component Count: Eliminates the need for external resistors, reducing the overall component count.
  • Fault Tolerant Architecture: Designed to ensure reliability and stability in various operating conditions.
  • Data Security Ensured: Though not explicitly detailed, the design ensures robust performance which can be critical in secure data handling applications.
  • Real Time Processing Achieved: Suitable for applications requiring real-time processing due to its efficient and stable operation.
  • User Friendly Interface Designed: Simplified design makes it easier to integrate into various systems.

Applications

The MMUN2112LT1G is versatile and can be used in a variety of applications, including:

  • Automotive Systems: Suitable for automotive applications due to its robust design and compliance with automotive standards.
  • Industrial Control Systems: Used in industrial control circuits where reliability and efficiency are crucial.
  • Consumer Electronics: Found in consumer electronics such as audio equipment, home appliances, and other electronic devices.
  • Medical Devices: Can be used in medical devices where precision and reliability are essential.

Q & A

  1. What is the MMUN2112LT1G?

    The MMUN2112LT1G is a pre-biased bipolar transistor (BJT) with an integrated bias resistor network, produced by onsemi.

  2. What are the key benefits of using the MMUN2112LT1G?

    It simplifies circuit design, reduces board space, and decreases the overall component count.

  3. What is the polarity of the MMUN2112LT1G?

    The MMUN2112LT1G is a PNP transistor.

  4. What is the maximum collector-emitter breakdown voltage of the MMUN2112LT1G?

    The maximum collector-emitter breakdown voltage (V(BR)CEO) is 50 V.

  5. What is the typical DC current gain (hFE) of the MMUN2112LT1G?

    The typical DC current gain (hFE) is 100.

  6. What is the package type of the MMUN2112LT1G?

    The MMUN2112LT1G comes in a SOT-23-3 (TO-236) package.

  7. Is the MMUN2112LT1G RoHS compliant?
  8. What is the maximum continuous collector current of the MMUN2112LT1G?

    The maximum continuous collector current is 0.1 A.

  9. What are the typical values of the integrated resistors R1 and R2?

    The typical values of R1 and R2 are both 22 kΩ.

  10. What is the operating temperature range of the MMUN2112LT1G?

    The operating temperature range is from -55°C to +150°C.

Product Attributes

Transistor Type:PNP - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):22 kOhms
Resistor - Emitter Base (R2):22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:- 
Power - Max:246 mW
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
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Part Number MMUN2112LT1G MMUN2113LT1G MMUN2132LT1G MMUN2114LT1G MMUN2115LT1G MMUN2116LT1G MMUN2212LT1G MMUN2111LT1G MMUN2112LT1
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active Active Active Active Obsolete
Transistor Type PNP - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased NPN - Pre-Biased PNP - Pre-Biased + Diode PNP - Pre-Biased
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 50 V 50 V 50 V 50 V 50 V 50 V 50 V
Resistor - Base (R1) 22 kOhms 47 kOhms 4.7 kOhms 10 kOhms 10 kOhms 4.7 kOhms 22 kOhms 10 kOhms 22 kOhms
Resistor - Emitter Base (R2) 22 kOhms 47 kOhms 4.7 kOhms 47 kOhms - - 22 kOhms 10 kOhms 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 5mA, 10V 80 @ 5mA, 10V 15 @ 5mA, 10V 80 @ 5mA, 10V 160 @ 5mA, 10V 160 @ 5mA, 10V 60 @ 5mA, 10V 35 @ 5mA, 10V 60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 1mA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 1mA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max) 500nA 500nA 500nA 500nA 500nA 500nA 500nA 500nA 500nA
Frequency - Transition - - - - - - - - -
Power - Max 246 mW 246 mW 246 mW 246 mW 400 mW 246 mW 246 mW 246 mW 246 mW
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)

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