Overview
The DTC114YET1G is an NPN Bipolar Digital Transistor (BRT) produced by onsemi. This device is part of a series designed to simplify circuit design by integrating a single transistor with a monolithic bias resistor network. This integration includes a series base resistor and a base-emitter resistor, thereby reducing the need for external components and minimizing board space. The DTC114YET1G is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements. Additionally, it is Pb-free, halogen-free/BFR-free, and RoHS compliant.
Key Specifications
| Characteristic | Symbol | Min | Max | Unit | |
|---|---|---|---|---|---|
| Collector-Base Cutoff Current | ICBO | - | - | 100 | nAdc |
| Collector-Emitter Cutoff Current | ICEO | - | - | 500 | nAdc |
| Emitter-Base Cutoff Current | IEBO | - | - | 0.2 | mAdc |
| Collector-Base Breakdown Voltage | V(BR)CBO | 50 | - | - | Vdc |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 50 | - | - | Vdc |
| DC Current Gain | hFE | 80 | 140 | - | - |
| Collector-Emitter Saturation Voltage | VCE(sat) | - | - | 0.25 | Vdc |
| Input Voltage (off) | Vi(off) | - | 0.7 | 0.5 | Vdc |
| Input Voltage (on) | Vi(on) | 1.4 | 0.8 | - | Vdc |
| Input Resistor R1 | R1 | 7.0 | 10 | 13 | kΩ |
| Resistor Ratio R1/R2 | R1/R2 | 0.17 | 0.21 | 0.25 | - |
| Junction and Storage Temperature Range | TJ, Tstg | -55 | - | +150 | °C |
Key Features
- Simplifies circuit design by integrating a single transistor with a monolithic bias resistor network.
- Reduces board space and component count.
- AEC-Q101 qualified and PPAP capable, suitable for automotive and other applications requiring unique site and control change requirements.
- Pb-free, halogen-free/BFR-free, and RoHS compliant.
- Includes a series base resistor and a base-emitter resistor, eliminating the need for external biasing components.
Applications
- Automotive systems requiring AEC-Q101 qualification and PPAP capability.
- General-purpose digital switching applications.
- Circuit designs where space and component count need to be minimized.
- Industrial control systems and consumer electronics.
Q & A
- What is the DTC114YET1G?
The DTC114YET1G is an NPN Bipolar Digital Transistor (BRT) produced by onsemi, designed to integrate a single transistor with a monolithic bias resistor network.
- What are the key benefits of using the DTC114YET1G?
It simplifies circuit design, reduces board space, and minimizes component count. It is also AEC-Q101 qualified and PPAP capable.
- What is the typical DC current gain (hFE) of the DTC114YET1G?
The typical DC current gain (hFE) is 140, with a minimum of 80.
- What is the collector-emitter saturation voltage (VCE(sat)) of the DTC114YET1G?
The collector-emitter saturation voltage (VCE(sat)) is 0.25 Vdc.
- What are the input voltage (on) and input voltage (off) specifications?
The input voltage (on) is 1.4 Vdc to 0.8 Vdc, and the input voltage (off) is 0.7 Vdc to 0.5 Vdc.
- What is the junction and storage temperature range for the DTC114YET1G?
The junction and storage temperature range is -55°C to +150°C.
- Is the DTC114YET1G RoHS compliant?
Yes, the DTC114YET1G is Pb-free, halogen-free/BFR-free, and RoHS compliant.
- What package types are available for the DTC114YET1G?
The DTC114YET1G is available in the SC-75 package type.
- What are some common applications for the DTC114YET1G?
Common applications include automotive systems, general-purpose digital switching, industrial control systems, and consumer electronics.
- How does the DTC114YET1G reduce system cost?
The DTC114YET1G reduces system cost by integrating the bias resistor network into a single device, thus eliminating the need for external resistors.
