Overview
The PDTC114ET-QR is a Pre-Biased NPN Bipolar Transistor manufactured by Nexperia USA Inc. This semiconductor device is packaged in a SOT23/TO-236AB form factor, making it suitable for surface mount applications. The pre-biased configuration means that the base voltage (VBE) and collector current (IC) are already optimized, simplifying the design and implementation process. This transistor is designed to be lead-free and RoHS compliant, ensuring environmental sustainability and regulatory compliance.
Key Specifications
| Parameter | Value |
|---|---|
| Transistor Type | NPN - Pre-Biased |
| Peak DC Collector Current | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Resistor - Base (R1) (Ohms) | 47 kΩ |
| Resistor - Emitter Base (R2) (Ohms) | 47 kΩ |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5 mA, 5 V |
| Vce Saturation (Max) @ Ib, Ic | 150 mV @ 500 µA, 10 mA |
| Current - Collector Cutoff (Max) | 1 µA |
| Power - Max | 250 mW |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23 (TO-236AB) |
| Minimum Operating Temperature | -65°C |
| Maximum Operating Temperature | +150°C |
| ESD Protection | Up to ± 2 kV |
Key Features
- Pre-biased NPN Bipolar Transistor, simplifying circuit design and reducing component count.
- Surface mount package (SOT23/TO-236AB) for compact and efficient board layout.
- Lead-free and RoHS compliant, ensuring environmental sustainability.
- Integrated base and emitter resistors (47 kΩ each) for easy integration into circuits.
- High ESD protection up to ± 2 kV.
- Low Vce saturation voltage (150 mV @ 500 µA, 10 mA) for efficient operation.
Applications
- Audio switches: Ideal for applications requiring low noise and high fidelity.
- Motor control: Suitable for controlling small motors in various industrial and consumer electronics.
- Industrial electronics: Used in a variety of industrial control circuits due to its robust specifications.
- General-purpose switching: Can be used in any application requiring a pre-biased NPN transistor.
Q & A
- What is the PDTC114ET-QR transistor type?
The PDTC114ET-QR is an NPN Pre-Biased Bipolar Transistor.
- What is the maximum collector current of the PDTC114ET-QR?
The maximum collector current is 100 mA.
- What is the maximum collector-emitter voltage of the PDTC114ET-QR?
The maximum collector-emitter voltage is 40 V.
- What are the values of the integrated base and emitter resistors?
The integrated base and emitter resistors are both 47 kΩ.
- What is the Vce saturation voltage of the PDTC114ET-QR?
The Vce saturation voltage is 150 mV @ 500 µA, 10 mA.
- Is the PDTC114ET-QR lead-free and RoHS compliant?
- What is the maximum operating temperature of the PDTC114ET-QR?
The maximum operating temperature is +150°C.
- What is the minimum operating temperature of the PDTC114ET-QR?
The minimum operating temperature is -65°C.
- What level of ESD protection does the PDTC114ET-QR offer?
The PDTC114ET-QR offers ESD protection up to ± 2 kV.
- In what package is the PDTC114ET-QR available?
The PDTC114ET-QR is available in a SOT23/TO-236AB package.
