DTC124XET1G
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onsemi DTC124XET1G

Manufacturer No:
DTC124XET1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS NPN 50V 100MA SC75
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The DTC124XET1G is a digital transistor produced by onsemi, designed to integrate a single transistor with a monolithic bias resistor network. This device simplifies circuit design by eliminating the need for external bias resistors, thereby reducing both system cost and board space. It is part of the DTC124X series, which includes various packages such as SC-75 and SOT-416. The DTC124XET1G is an NPN transistor with pre-biased configuration, making it suitable for a wide range of applications requiring compact and efficient transistor solutions.

Key Specifications

Characteristic Symbol Min Typ Max Unit
Collector-Base Cutoff Current ICBO - - 100 nAdc
Collector-Emitter Cutoff Current ICEO - - 500 nAdc
Emitter-Base Cutoff Current IEBO - - 0.13 mAdc
Collector-Base Breakdown Voltage V(BR)CBO 50 - - Vdc
Collector-Emitter Breakdown Voltage V(BR)CEO 50 - - Vdc
DC Current Gain hFE 80 150 - -
Collector-Emitter Saturation Voltage VCE(sat) - - 0.25 Vdc
Total Device Dissipation (TA = 25°C) PD - - 200 mW
Thermal Resistance, Junction to Ambient RθJA - - 600 °C/W
Junction and Storage Temperature Range TJ, Tstg -55 - 150 °C

Key Features

  • Simplifies Circuit Design: Integrates a single transistor with a monolithic bias resistor network, eliminating the need for external resistors.
  • Reduces Board Space: Compact SC-75 and SOT-416 packages minimize board real estate.
  • Reduces Component Count: Combines multiple components into a single device, reducing overall component count.
  • AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring unique site and control change requirements.
  • Pb-Free, Halogen Free/BFR Free, and RoHS Compliant: Environmentally friendly and compliant with regulatory standards.

Applications

  • Automotive Systems: Ideal for use in automotive applications due to its AEC-Q101 qualification and PPAP capability.
  • Consumer Electronics: Suitable for various consumer electronics where compact and efficient transistor solutions are required.
  • Industrial Control Systems: Can be used in industrial control systems where reliability and space efficiency are crucial.
  • General Purpose Switching: Applicable in general-purpose switching applications where a pre-biased transistor is beneficial.

Q & A

  1. What is the DTC124XET1G?

    The DTC124XET1G is a digital transistor with a monolithic bias resistor network, designed to simplify circuit design and reduce board space.

  2. What package types are available for the DTC124XET1G?

    The DTC124XET1G is available in SC-75 and SOT-416 packages.

  3. What is the maximum collector-emitter breakdown voltage of the DTC124XET1G?

    The maximum collector-emitter breakdown voltage is 50 Vdc.

  4. What is the typical DC current gain (hFE) of the DTC124XET1G?

    The typical DC current gain (hFE) is 150.

  5. What is the maximum total device dissipation at 25°C?

    The maximum total device dissipation at 25°C is 200 mW.

  6. Is the DTC124XET1G RoHS compliant?

    Yes, the DTC124XET1G is Pb-Free, Halogen Free/BFR Free, and RoHS compliant.

  7. What are the junction and storage temperature ranges for the DTC124XET1G?

    The junction and storage temperature ranges are -55°C to 150°C.

  8. What are some common applications for the DTC124XET1G?

    Common applications include automotive systems, consumer electronics, industrial control systems, and general-purpose switching.

  9. Is the DTC124XET1G AEC-Q101 qualified?

    Yes, the DTC124XET1G is AEC-Q101 qualified and PPAP capable.

  10. What is the thermal resistance, junction to ambient, for the DTC124XET1G?

    The thermal resistance, junction to ambient, is 600 °C/W.

Product Attributes

Transistor Type:NPN - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):22 kOhms
Resistor - Emitter Base (R2):47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:250mV @ 1mA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:- 
Power - Max:200 mW
Mounting Type:Surface Mount
Package / Case:SC-75, SOT-416
Supplier Device Package:SC-75, SOT-416
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Similar Products

Part Number DTC124XET1G DTC124EET1G DTC124XET1
Manufacturer onsemi onsemi onsemi
Product Status Active Active Obsolete
Transistor Type NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 50 V
Resistor - Base (R1) 22 kOhms 22 kOhms 22 kOhms
Resistor - Emitter Base (R2) 47 kOhms 22 kOhms 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V 60 @ 5mA, 10V 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA 250mV @ 300µA, 10mA 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max) 500nA 500nA 500nA
Frequency - Transition - - -
Power - Max 200 mW 200 mW 200 mW
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case SC-75, SOT-416 SC-75, SOT-416 SC-75, SOT-416
Supplier Device Package SC-75, SOT-416 SC-75, SOT-416 SC-75, SOT-416

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