PDTA114EMB,315
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Nexperia USA Inc. PDTA114EMB,315

Manufacturer No:
PDTA114EMB,315
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS PNP 50V DFN1006B-3
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The PDTA114EMB,315 is a resistor-equipped transistor (RET) produced by Nexperia USA Inc. This component is part of Nexperia's extensive portfolio of bipolar transistors, designed to enhance efficiency and simplify circuit design. With its built-in bias resistors, the PDTA114EMB,315 reduces the component count and pick-and-place costs, making it an ideal choice for various electronic applications.

Key Specifications

ParameterValue
Transistor TypePNP
Output Current100 mA
Collector-Emitter Voltage50 V
Built-in ResistorsYes
Package TypeSOT223

Key Features

  • Reduces component count with built-in bias resistors.
  • Simplifies circuit design by integrating resistors into the transistor package.
  • Lowers pick-and-place costs due to the reduced number of components.
  • High output current capability of 100 mA.
  • Collector-Emitter voltage rating of 50 V.

Applications

The PDTA114EMB,315 is suitable for a wide range of applications across various industries, including automotive, industrial, computing, and consumer electronics. It is particularly useful in designs where space is limited and component count needs to be minimized. The component's robust specifications make it a reliable choice for power management and signal processing tasks.

Q & A

  1. What is the output current capability of the PDTA114EMB,315?
    The output current capability is 100 mA.
  2. What type of transistor is the PDTA114EMB,315?
    The PDTA114EMB,315 is a PNP transistor.
  3. What is the collector-emitter voltage rating of the PDTA114EMB,315?
    The collector-emitter voltage rating is 50 V.
  4. Does the PDTA114EMB,315 have built-in resistors?
    Yes, it has built-in bias resistors.
  5. What are the benefits of using the PDTA114EMB,315 in circuit design?
    It reduces component count, simplifies circuit design, and lowers pick-and-place costs.
  6. In which package type is the PDTA114EMB,315 available?
    The PDTA114EMB,315 is available in the SOT223 package type.
  7. What industries can the PDTA114EMB,315 be used in?
    The PDTA114EMB,315 can be used in automotive, industrial, computing, and consumer electronics industries.
  8. Why is the PDTA114EMB,315 a reliable choice for power management and signal processing tasks?
    It is a reliable choice due to its robust specifications and built-in resistors, which simplify and enhance the reliability of the circuit design.
  9. How does the PDTA114EMB,315 contribute to reducing component count in a circuit?
    The PDTA114EMB,315 reduces component count by integrating bias resistors into the transistor package.
  10. Where can I find more detailed specifications and documentation for the PDTA114EMB,315?
    You can find detailed specifications and documentation on Nexperia's official website or through authorized distributors like Digi-Key and TTI.

Product Attributes

Transistor Type:PNP - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):10 kOhms
Resistor - Emitter Base (R2):10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:150mV @ 500µA, 10mA
Current - Collector Cutoff (Max):1µA
Frequency - Transition:180 MHz
Power - Max:250 mW
Mounting Type:Surface Mount
Package / Case:3-XFDFN
Supplier Device Package:DFN1006B-3
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Similar Products

Part Number PDTA114EMB,315 PDTA115EMB,315 PDTA113EMB,315 PDTA114EM,315
Manufacturer Nexperia USA Inc. NXP USA Inc. NXP USA Inc. Nexperia USA Inc.
Product Status Active Active Active Active
Transistor Type PNP - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased
Current - Collector (Ic) (Max) 100 mA 20 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 50 V 50 V
Resistor - Base (R1) 10 kOhms 100 kOhms 1 kOhms 10 kOhms
Resistor - Emitter Base (R2) 10 kOhms 100 kOhms 1 kOhms 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA, 5V 80 @ 5mA, 5V 30 @ 40mA, 5V 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 10mA 150mV @ 250µA, 5mA 150mV @ 1.5mA, 30mA 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 1µA 1µA 100nA (ICBO) 1µA
Frequency - Transition 180 MHz 180 MHz 180 MHz -
Power - Max 250 mW 250 mW 250 mW 250 mW
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 3-XFDFN SC-101, SOT-883 SC-101, SOT-883 SC-101, SOT-883
Supplier Device Package DFN1006B-3 DFN1006B-3 DFN1006B-3 SOT-883

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