PDTA114EM,315
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Nexperia USA Inc. PDTA114EM,315

Manufacturer No:
PDTA114EM,315
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS PNP 250MW SOT883
Delivery:
Payment:
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Product Introduction

Overview

The PDTA114EM,315 is a pre-biased bipolar transistor (BJT) manufactured by Nexperia USA Inc. This PNP transistor is designed to simplify circuit design and reduce component count, making it an efficient choice for various electronic applications. It features built-in bias resistors, which help in streamlining the design process and reducing production costs.

Key Specifications

Parameter Value
Type Pre-Biased Bipolar Transistor (BJT) PNP
Voltage Rating 50 V
Output Current Capability 100 mA
Power Dissipation 250 mW
Package Type SOT-883 (Surface Mount)

Key Features

  • Pre-biased with built-in bias resistors, simplifying circuit design and reducing component count.
  • Reduces pick and place costs due to the integrated resistors.
  • PNP transistor configuration for specific application needs.
  • Compact SOT-883 surface mount package for space-efficient designs.

Applications

The PDTA114EM,315 is versatile and can be used in a variety of applications across different industries. Some of the key application areas include:

  • Automotive systems: For reliable and efficient performance in automotive electronics.
  • Industrial electronics: Suitable for industrial control systems and automation.
  • Consumer electronics: Used in various consumer devices requiring compact and efficient transistor solutions.
  • Mobile and computing devices: For applications requiring low power consumption and high reliability.

Q & A

  1. What is the voltage rating of the PDTA114EM,315 transistor?

    The voltage rating of the PDTA114EM,315 transistor is 50 V.

  2. What is the output current capability of this transistor?

    The output current capability of the PDTA114EM,315 transistor is 100 mA).

  3. What type of package does the PDTA114EM,315 come in?

    The PDTA114EM,315 comes in a SOT-883 surface mount package).

  4. What is the power dissipation of the PDTA114EM,315 transistor?

    The power dissipation of the PDTA114EM,315 transistor is 250 mW).

  5. Does the PDTA114EM,315 have built-in bias resistors?

    Yes, the PDTA114EM,315 has built-in bias resistors, which simplifies circuit design and reduces component count).

  6. In what industries can the PDTA114EM,315 be applied?

    The PDTA114EM,315 can be applied in automotive, industrial, consumer electronics, mobile, and computing devices).

  7. What are the benefits of using the PDTA114EM,315 in circuit design?

    The PDTA114EM,315 simplifies circuit design, reduces component count, and lowers pick and place costs due to its built-in bias resistors).

  8. Who is the manufacturer of the PDTA114EM,315 transistor?

    The PDTA114EM,315 transistor is manufactured by Nexperia USA Inc.).

  9. Where can I purchase the PDTA114EM,315 transistor?

    The PDTA114EM,315 transistor can be purchased from authorized distributors such as Digi-Key, Heisener, and TTI Inc.).

  10. What is the significance of the SOT-883 package for the PDTA114EM,315?

    The SOT-883 package is a surface mount type, which makes it suitable for space-efficient designs and easy integration into modern electronic circuits).

Product Attributes

Transistor Type:PNP - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):10 kOhms
Resistor - Emitter Base (R2):10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:150mV @ 500µA, 10mA
Current - Collector Cutoff (Max):1µA
Frequency - Transition:- 
Power - Max:250 mW
Mounting Type:Surface Mount
Package / Case:SC-101, SOT-883
Supplier Device Package:SOT-883
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Similar Products

Part Number PDTA114EM,315 PDTA114EMB,315 PDTA114TM,315 PDTA113EM,315
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active Active
Transistor Type PNP - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 50 V 50 V
Resistor - Base (R1) 10 kOhms 10 kOhms 10 kOhms 1 kOhms
Resistor - Emitter Base (R2) 10 kOhms 10 kOhms - 1 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA, 5V 30 @ 5mA, 5V 200 @ 1mA, 5V 30 @ 40mA, 5V
Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 10mA 150mV @ 500µA, 10mA 150mV @ 500µA, 10mA 150mV @ 1.5mA, 30mA
Current - Collector Cutoff (Max) 1µA 1µA 1µA 1µA
Frequency - Transition - 180 MHz - -
Power - Max 250 mW 250 mW 250 mW 250 mW
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SC-101, SOT-883 3-XFDFN SC-101, SOT-883 SC-101, SOT-883
Supplier Device Package SOT-883 DFN1006B-3 SOT-883 SOT-883

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