Overview
The MUN2111T1G is a digital transistor produced by onsemi, designed to integrate a transistor and its external resistor bias network into a single device. This Bias Resistor Transistor (BRT) series simplifies circuit design and reduces component count, making it ideal for various electronic applications. The device is known for its compact SC-59 package and robust operating temperature range, making it suitable for a wide range of environments.
Key Specifications
Parameter | Value |
---|---|
Transistor Type | PNP - Pre-Biased |
Peak DC Collector Current (Ic) | 100 mA |
Voltage - Collector Emitter Breakdown (Vceo) | 50 V |
Resistor - Base (R1) | 10 kOhms |
Power Dissipation (Pd) | 230 mW |
Minimum Operating Temperature | -55°C |
Maximum Operating Temperature | +150°C |
Key Features
- Integrated transistor and resistor bias network, reducing component count and simplifying circuit design.
- Compact SC-59 package.
- Robust operating temperature range from -55°C to +150°C.
- Low power dissipation of 230 mW.
- High collector-emitter breakdown voltage of 50 V.
Applications
The MUN2111T1G is versatile and can be used in a variety of applications, including but not limited to:
- Automotive systems: Due to its wide operating temperature range, it is suitable for use in automotive electronics.
- Industrial control systems: It can be used in control circuits that require reliable and stable operation.
- Consumer electronics: Ideal for applications where space is limited and component count needs to be minimized.
- Sensor circuits: Can be used to drive sensors and other low-power devices.
Q & A
- What is the peak DC collector current of the MUN2111T1G?
The peak DC collector current is 100 mA. - What is the maximum operating temperature of the MUN2111T1G?
The maximum operating temperature is +150°C. - What type of transistor is the MUN2111T1G?
The MUN2111T1G is a PNP pre-biased transistor. - What is the collector-emitter breakdown voltage of the MUN2111T1G?
The collector-emitter breakdown voltage is 50 V. - What is the power dissipation of the MUN2111T1G?
The power dissipation is 230 mW. - What is the base resistor value of the MUN2111T1G?
The base resistor value is 10 kOhms. - In what package is the MUN2111T1G available?
The MUN2111T1G is available in the SC-59 package. - Why is the MUN2111T1G useful in circuit design?
The MUN2111T1G is useful because it integrates a transistor and its external resistor bias network into a single device, simplifying circuit design and reducing component count. - What are some common applications of the MUN2111T1G?
Common applications include automotive systems, industrial control systems, consumer electronics, and sensor circuits. - Is the MUN2111T1G RoHS compliant?
Yes, the MUN2111T1G is RoHS compliant.