MUN2111T1G
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onsemi MUN2111T1G

Manufacturer No:
MUN2111T1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS PNP 50V 100MA SC59
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MUN2111T1G is a digital transistor produced by onsemi, designed to integrate a transistor and its external resistor bias network into a single device. This Bias Resistor Transistor (BRT) series simplifies circuit design and reduces component count, making it ideal for various electronic applications. The device is known for its compact SC-59 package and robust operating temperature range, making it suitable for a wide range of environments.

Key Specifications

ParameterValue
Transistor TypePNP - Pre-Biased
Peak DC Collector Current (Ic)100 mA
Voltage - Collector Emitter Breakdown (Vceo)50 V
Resistor - Base (R1)10 kOhms
Power Dissipation (Pd)230 mW
Minimum Operating Temperature-55°C
Maximum Operating Temperature+150°C

Key Features

  • Integrated transistor and resistor bias network, reducing component count and simplifying circuit design.
  • Compact SC-59 package.
  • Robust operating temperature range from -55°C to +150°C.
  • Low power dissipation of 230 mW.
  • High collector-emitter breakdown voltage of 50 V.

Applications

The MUN2111T1G is versatile and can be used in a variety of applications, including but not limited to:

  • Automotive systems: Due to its wide operating temperature range, it is suitable for use in automotive electronics.
  • Industrial control systems: It can be used in control circuits that require reliable and stable operation.
  • Consumer electronics: Ideal for applications where space is limited and component count needs to be minimized.
  • Sensor circuits: Can be used to drive sensors and other low-power devices.

Q & A

  1. What is the peak DC collector current of the MUN2111T1G?
    The peak DC collector current is 100 mA.
  2. What is the maximum operating temperature of the MUN2111T1G?
    The maximum operating temperature is +150°C.
  3. What type of transistor is the MUN2111T1G?
    The MUN2111T1G is a PNP pre-biased transistor.
  4. What is the collector-emitter breakdown voltage of the MUN2111T1G?
    The collector-emitter breakdown voltage is 50 V.
  5. What is the power dissipation of the MUN2111T1G?
    The power dissipation is 230 mW.
  6. What is the base resistor value of the MUN2111T1G?
    The base resistor value is 10 kOhms.
  7. In what package is the MUN2111T1G available?
    The MUN2111T1G is available in the SC-59 package.
  8. Why is the MUN2111T1G useful in circuit design?
    The MUN2111T1G is useful because it integrates a transistor and its external resistor bias network into a single device, simplifying circuit design and reducing component count.
  9. What are some common applications of the MUN2111T1G?
    Common applications include automotive systems, industrial control systems, consumer electronics, and sensor circuits.
  10. Is the MUN2111T1G RoHS compliant?
    Yes, the MUN2111T1G is RoHS compliant.

Product Attributes

Transistor Type:PNP - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):10 kOhms
Resistor - Emitter Base (R2):10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:- 
Power - Max:230 mW
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SC-59
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Similar Products

Part Number MUN2111T1G MUN2211T1G MUN2114T1G MUN5111T1G MUN2113T1G MUN2115T1G MUN2116T1G MUN2112T1G MUN2141T1G MUN2131T1G MUN2111T3G MUN2111T1
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active Active Active Active Active Active Obsolete Obsolete
Transistor Type PNP - Pre-Biased NPN - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased -
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA -
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 50 V 50 V 50 V 50 V 50 V 50 V 50 V 50 V 50 V -
Resistor - Base (R1) 10 kOhms 10 kOhms 10 kOhms 10 kOhms 47 kOhms 10 kOhms 4.7 kOhms 22 kOhms 100 kOhms 2.2 kOhms 10 kOhms -
Resistor - Emitter Base (R2) 10 kOhms 10 kOhms 47 kOhms 10 kOhms 47 kOhms - - 22 kOhms - 2.2 kOhms 10 kOhms -
DC Current Gain (hFE) (Min) @ Ic, Vce 35 @ 5mA, 10V 35 @ 5mA, 10V 80 @ 5mA, 10V 35 @ 5mA, 10V 80 @ 5mA, 10V 160 @ 5mA, 10V 160 @ 5mA, 10V 60 @ 5mA, 10V 160 @ 5mA, 10V 8 @ 5mA, 10V 35 @ 5mA, 10V -
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 1mA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 5mA, 10mA 250mV @ 300µA, 10mA -
Current - Collector Cutoff (Max) 500nA 500nA 500nA 500nA 500nA 500nA 500nA 500nA 500nA 500nA 500nA -
Frequency - Transition - - - - - - - - - - - -
Power - Max 230 mW 230 mW 230 mW 202 mW 230 mW 230 mW 230 mW 230 mW 230 mW 230 mW 230 mW -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount -
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 -
Supplier Device Package SC-59 SC-59 SC-59 SC-70-3 (SOT323) SC-59 SC-59 SC-59 SC-59 SC-59 SC-59 SC-59 -

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