MJD44H11G
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onsemi MJD44H11G

Manufacturer No:
MJD44H11G
Manufacturer:
onsemi
Package:
Bulk
Description:
TRANS NPN 80V 8A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MJD44H11G is a high-performance NPN power transistor manufactured by onsemi. It is designed for general-purpose power and switching applications, including output or driver stages in switching regulators, converters, and power amplifiers. This transistor is part of the MJD44H11 and MJD45H11 series, which are electrically similar to the popular D44H/D45H series. The MJD44H11G is packaged in a DPAK (TO-252) case, making it suitable for surface mount applications.

Key Specifications

ParameterSymbolMax Unit
Collector-Emitter VoltageVCEO80 Vdc
Emitter-Base VoltageVEB5 Vdc
Collector Current - ContinuousIC8 Adc
Collector Current - PeakICM16 Adc
Total Power Dissipation @ TC = 25°CPD20 W
Operating and Storage Junction Temperature RangeTJ, Tstg−55 to +150 °C
Thermal Resistance, Junction-to-CaseRJC6.25 °C/W
Thermal Resistance, Junction-to-AmbientRJA71.4 °C/W
Lead Temperature for SolderingTL260 °C

Key Features

  • Lead formed for surface mount application in plastic sleeves.
  • Straight lead version available with “−1” suffix.
  • Low collector-emitter saturation voltage (VCE(sat) = 1 Vdc).
  • Fast switching speeds.
  • Complementary pairs simplify designs.
  • Epoxy meets UL 94 V-0 @ 0.125 in.
  • NJV prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.
  • Pb-free, halogen-free/BFR-free, and RoHS compliant.

Applications

The MJD44H11G is designed for various power and switching applications, including:

  • Output or driver stages in switching regulators.
  • Converters.
  • Power amplifiers.
  • Automotive and industrial power management systems.
  • General-purpose power switching.

Q & A

  1. What is the maximum collector-emitter voltage for the MJD44H11G?
    The maximum collector-emitter voltage (VCEO) is 80 Vdc.
  2. What is the continuous collector current rating for the MJD44H11G?
    The continuous collector current (IC) is 8 Adc.
  3. What is the peak collector current rating for the MJD44H11G?
    The peak collector current (ICM) is 16 Adc.
  4. What is the total power dissipation at TC = 25°C for the MJD44H11G?
    The total power dissipation (PD) at TC = 25°C is 20 W.
  5. What is the operating and storage junction temperature range for the MJD44H11G?
    The operating and storage junction temperature range (TJ, Tstg) is −55 to +150 °C.
  6. Is the MJD44H11G RoHS compliant?
    Yes, the MJD44H11G is Pb-free, halogen-free/BFR-free, and RoHS compliant.
  7. What package types are available for the MJD44H11G?
    The MJD44H11G is available in DPAK (TO-252) packages.
  8. What are the thermal resistance values for the MJD44H11G?
    The thermal resistance, junction-to-case (RJC), is 6.25 °C/W, and the thermal resistance, junction-to-ambient (RJA), is 71.4 °C/W.
  9. What is the lead temperature for soldering the MJD44H11G?
    The lead temperature for soldering (TL) is 260 °C.
  10. Is the MJD44H11G suitable for automotive applications?
    Yes, the MJD44H11G with the NJV prefix is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):8 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:1V @ 400mA, 8A
Current - Collector Cutoff (Max):1µA
DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 4A, 1V
Power - Max:1.75 W
Frequency - Transition:85MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
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Similar Products

Part Number MJD44H11G MJD44H11J MJD45H11G MJD44H11
Manufacturer onsemi Nexperia USA Inc. onsemi onsemi
Product Status Active Active Active Obsolete
Transistor Type NPN NPN PNP NPN
Current - Collector (Ic) (Max) 8 A 8 A 8 A 8 A
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V 80 V 80 V
Vce Saturation (Max) @ Ib, Ic 1V @ 400mA, 8A 1V @ 400mA, 8A 1V @ 400mA, 8A 1V @ 400mA, 8A
Current - Collector Cutoff (Max) 1µA 1µA 1µA 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 4A, 1V 60 @ 2A, 1V 40 @ 4A, 1V 60 @ 2A, 1V
Power - Max 1.75 W 1.75 W 1.75 W 20 W
Frequency - Transition 85MHz 160MHz 90MHz 85MHz
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK DPAK DPAK DPAK

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