NJVMJD44H11RLG-VF01
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onsemi NJVMJD44H11RLG-VF01

Manufacturer No:
NJVMJD44H11RLG-VF01
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN 80V 8A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NJVMJD44H11RLG-VF01 is a high-performance NPN bipolar power transistor manufactured by onsemi. This device is part of the NJVMJD4xH11xxG series, designed for general-purpose power and switching applications. It is packaged in a DPAK (Surface Mount Device) format, making it suitable for surface mount applications. The transistor is electrically similar to the popular D44H series and is AEC-Q101 qualified, making it suitable for automotive and other demanding applications.

Key Specifications

Characteristic Symbol Min Typ Max Unit
Collector-Emitter Voltage VCEO - - 80 Vdc
Collector Current IC - - 8 A
Peak Collector Current ICM - - 16 A
Total Power Dissipation Ptot - - 1.75 W
Junction Temperature Tj - - 150 °C
Collector-Emitter Saturation Voltage VCE(sat) - - 1 Vdc
Base-Emitter Saturation Voltage VBE(sat) - - 1.5 Vdc
DC Current Gain hFE 40 - - -
Thermal Resistance, Junction-to-Case RJC - - 6.25 °C/W
Thermal Resistance, Junction-to-Ambient RJA - - 71.4 °C/W

Key Features

  • Complementary Pairs: The NJVMJD44H11 and NJVMJD45H11 form complementary pairs, simplifying design processes.
  • Low Collector-Emitter Saturation Voltage: Offers low VCE(sat) of 1 V, enhancing efficiency in switching applications.
  • Fast Switching Speeds: Features fast switching times with delay and rise times as low as 300 ns and fall times as low as 140 ns.
  • AEC-Q101 Qualified: Meets automotive standards, ensuring reliability and performance in demanding environments.
  • Pb-Free, Halogen Free/BFR Free, and RoHS Compliant: Environmentally friendly and compliant with global regulations.
  • High Gain Bandwidth Product: Up to 85 MHz, suitable for high-frequency applications.
  • Surface Mount Package: DPAK package for easy surface mount applications.

Applications

  • Switching Regulators and Converters: Ideal for output or driver stages in switching regulators and converters.
  • Power Amplifiers: Suitable for use in power amplifier circuits due to its high current and voltage handling capabilities.
  • Automotive Systems: AEC-Q101 qualification makes it suitable for various automotive applications.
  • General Purpose Power and Switching: Can be used in a variety of general-purpose power and switching applications.

Q & A

  1. What is the maximum collector-emitter voltage of the NJVMJD44H11RLG-VF01?

    The maximum collector-emitter voltage (VCEO) is 80 Vdc.

  2. What is the maximum collector current of the NJVMJD44H11RLG-VF01?

    The maximum collector current (IC) is 8 A.

  3. What is the thermal resistance from junction to case for the NJVMJD44H11RLG-VF01?

    The thermal resistance from junction to case (RJC) is 6.25 °C/W.

  4. Is the NJVMJD44H11RLG-VF01 RoHS compliant?

    Yes, the device is Pb-Free, Halogen Free/BFR Free, and RoHS compliant.

  5. What is the gain bandwidth product of the NJVMJD44H11RLG-VF01?

    The gain bandwidth product (fT) is up to 85 MHz.

  6. What package type is used for the NJVMJD44H11RLG-VF01?

    The device is packaged in a DPAK (Surface Mount Device) format.

  7. What are the typical applications of the NJVMJD44H11RLG-VF01?

    Typical applications include switching regulators, converters, power amplifiers, and automotive systems.

  8. Is the NJVMJD44H11RLG-VF01 AEC-Q101 qualified?

    Yes, the device is AEC-Q101 qualified, making it suitable for automotive and other demanding applications.

  9. What is the collector-emitter saturation voltage of the NJVMJD44H11RLG-VF01?

    The collector-emitter saturation voltage (VCE(sat)) is 1 Vdc.

  10. What are the fast switching times of the NJVMJD44H11RLG-VF01?

    The device features fast switching times with delay and rise times as low as 300 ns and fall times as low as 140 ns.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):8 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:1V @ 400mA, 8A
Current - Collector Cutoff (Max):1µA
DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 4A, 1V
Power - Max:1.75 W
Frequency - Transition:85MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
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Similar Products

Part Number NJVMJD44H11RLG-VF01 NJVMJD45H11RLG-VF01
Manufacturer onsemi onsemi
Product Status Active Active
Transistor Type NPN PNP
Current - Collector (Ic) (Max) 8 A 8 A
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V
Vce Saturation (Max) @ Ib, Ic 1V @ 400mA, 8A 1V @ 400mA, 8A
Current - Collector Cutoff (Max) 1µA 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 4A, 1V 40 @ 4A, 1V
Power - Max 1.75 W 1.75 W
Frequency - Transition 85MHz 90MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK DPAK

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