MJD44H11-1G
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onsemi MJD44H11-1G

Manufacturer No:
MJD44H11-1G
Manufacturer:
onsemi
Package:
Bulk
Description:
TRANS NPN 80V 8A IPAK
Delivery:
Payment:
iso14001
iso45001
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Product Introduction

Overview

The onsemi MJD44H11-1G is a high-performance NPN bipolar power transistor designed for various power management and amplification applications. This transistor is part of the MJD44H11 series and is known for its robust specifications and reliability. It is packaged in a TO-252 (DPAK) surface mount configuration, making it suitable for modern electronic designs that require efficient and compact solutions.

Key Specifications

SpecificationValue
Transistor TypeNPN
Maximum DC Collector Current8 A
Maximum Collector Emitter Voltage80 V dc
Package TypeDPAK (TO-252)
Mounting TypeSurface Mount
Maximum Power Dissipation20 W
Minimum DC Current Gain60
Maximum Emitter Base Voltage5 V dc
Maximum Operating Frequency1 MHz
Pin Count3 + Tab
Dimensions6.73 x 2.38 x 6.22 mm
Maximum Operating Temperature+150 °C

Key Features

  • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) and Straight Lead Version in Plastic Sleeves (“−1” Suffix).
  • Electrically Similar to Popular D44H/D45H Series.
  • Low Collector Emitter Saturation Voltage − VCE(sat) = 1.0 Volt Max @ 8.0 A.
  • Fast Switching Speeds.
  • Complementary Pairs Simplifies Designs.
  • Epoxy Meets UL 94 V−0 @ 0.125 in.
  • ESD Ratings: Human Body Model, 3B > 8000 V; Machine Model, C > 400 V.
  • NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable.
  • Pb−Free Packages.

Applications

  • Switching regulators.
  • Converters.
  • Power amplifiers.

Q & A

  1. What is the maximum DC collector current of the MJD44H11-1G transistor? The maximum DC collector current is 8 A.
  2. What is the maximum collector-emitter voltage of the MJD44H11-1G transistor? The maximum collector-emitter voltage is 80 V dc.
  3. What type of package does the MJD44H11-1G transistor use? The transistor is packaged in a DPAK (TO-252) surface mount configuration.
  4. What is the maximum power dissipation of the MJD44H11-1G transistor? The maximum power dissipation is 20 W.
  5. What is the minimum DC current gain of the MJD44H11-1G transistor? The minimum DC current gain is 60.
  6. What are the dimensions of the MJD44H11-1G transistor? The dimensions are 6.73 x 2.38 x 6.22 mm.
  7. What is the maximum operating temperature of the MJD44H11-1G transistor? The maximum operating temperature is +150 °C.
  8. Is the MJD44H11-1G transistor AEC-Q101 qualified? Yes, it is AEC-Q101 qualified and PPAP capable.
  9. What are some common applications of the MJD44H11-1G transistor? Common applications include switching regulators, converters, and power amplifiers.
  10. Does the MJD44H11-1G transistor have ESD protection? Yes, it has ESD ratings: Human Body Model, 3B > 8000 V; Machine Model, C > 400 V).

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):8 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:1V @ 400mA, 8A
Current - Collector Cutoff (Max):1µA
DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 4A, 1V
Power - Max:1.75 W
Frequency - Transition:85MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package:I-PAK
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Similar Products

Part Number MJD44H11-1G MJD45H11-1G
Manufacturer onsemi onsemi
Product Status Active Active
Transistor Type NPN PNP
Current - Collector (Ic) (Max) 8 A 8 A
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V
Vce Saturation (Max) @ Ib, Ic 1V @ 400mA, 8A 1V @ 400mA, 8A
Current - Collector Cutoff (Max) 1µA 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 4A, 1V 40 @ 4A, 1V
Power - Max 1.75 W 1.75 W
Frequency - Transition 85MHz 90MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package I-PAK I-PAK

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