BD680
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STMicroelectronics BD680

Manufacturer No:
BD680
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
TRANS PNP DARL 80V 4A SOT32-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BD680 is a PNP power Darlington transistor manufactured by STMicroelectronics. It is part of STMicroelectronics' Darlington transistor portfolio, which includes devices with voltage ranges up to 400 V and both NPN and PNP polarities. The BD680 is fabricated using planar base island technology with a monolithic Darlington configuration, which includes an integrated antiparallel collector-emitter diode. This configuration enhances the transistor's performance in various applications, particularly in linear and switching industrial equipment.

Key Specifications

ParameterValueUnit
Collector-emitter voltage (VCEO)80V
Collector current (IC)4A
Collector peak current (ICM)6A
Base current (IB)0.1A
Total dissipation at Tcase = 25°C (PTOT)40W
Operating junction temperature (TJ)-65 to 150°C
Storage temperature (Tstg)-65 to 150°C
Collector-emitter saturation voltage (VCE(sat))2.5V
DC current gain (hFE)750
PackageSOT-32
MountingTHT (Through-Hole Technology)

Key Features

  • Monolithic Darlington configuration with integrated antiparallel collector-emitter diode.
  • Good hFE linearity.
  • High fT frequency.
  • Manufactured in planar base island technology.
  • ECOPACK1 compliant, indicating lead-free second level interconnect.

Applications

The BD680 is suitable for various industrial applications, including linear and switching equipment. Its high current gain, low saturation voltage, and robust thermal dissipation capabilities make it ideal for use in power amplifiers, motor control circuits, and other high-current applications.

Q & A

  1. What is the collector-emitter voltage (VCEO) of the BD680 transistor?
    The collector-emitter voltage (VCEO) of the BD680 transistor is 80 V.
  2. What is the maximum collector current (IC) of the BD680?
    The maximum collector current (IC) of the BD680 is 4 A.
  3. What is the package type of the BD680 transistor?
    The BD680 transistor is packaged in a SOT-32 package.
  4. Is the BD680 transistor RoHS compliant?
    Yes, the BD680 transistor is RoHS compliant and comes in an ECOPACK1 package.
  5. What is the typical DC current gain (hFE) of the BD680 transistor?
    The typical DC current gain (hFE) of the BD680 transistor is 750.
  6. What are the operating temperature ranges for the BD680 transistor?
    The operating junction temperature range for the BD680 transistor is -65 to 150 °C, and the storage temperature range is also -65 to 150 °C.
  7. What type of mounting does the BD680 transistor use?
    The BD680 transistor uses Through-Hole Technology (THT) mounting.
  8. What are some typical applications of the BD680 transistor?
    The BD680 transistor is typically used in linear and switching industrial equipment, power amplifiers, and motor control circuits.
  9. Does the BD680 transistor have an integrated antiparallel collector-emitter diode?
    Yes, the BD680 transistor has an integrated antiparallel collector-emitter diode.
  10. What is the total dissipation at Tcase = 25°C for the BD680 transistor?
    The total dissipation at Tcase = 25°C for the BD680 transistor is 40 W.

Product Attributes

Transistor Type:PNP - Darlington
Current - Collector (Ic) (Max):4 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max):500µA
DC Current Gain (hFE) (Min) @ Ic, Vce:750 @ 1.5A, 3V
Power - Max:40 W
Frequency - Transition:- 
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-225AA, TO-126-3
Supplier Device Package:SOT-32-3
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Similar Products

Part Number BD680 BD680G BD681 BD682 BD680A
Manufacturer STMicroelectronics onsemi STMicroelectronics STMicroelectronics onsemi
Product Status Active Obsolete Active Active Obsolete
Transistor Type PNP - Darlington PNP - Darlington NPN - Darlington PNP - Darlington PNP - Darlington
Current - Collector (Ic) (Max) 4 A 4 A 4 A 4 A 4 A
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V 100 V 100 V 80 V
Vce Saturation (Max) @ Ib, Ic 2.5V @ 30mA, 1.5A 2.5V @ 30mA, 1.5A 2.5V @ 30mA, 1.5A 2.5V @ 30mA, 1.5A 2.8V @ 40mA, 2A
Current - Collector Cutoff (Max) 500µA 500µA 500µA 500µA 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 1.5A, 3V 750 @ 1.5A, 3V 750 @ 1.5A, 3V 750 @ 1.5A, 3V 750 @ 2A, 3V
Power - Max 40 W 40 W 40 W 40 W 40 W
Frequency - Transition - - - - -
Operating Temperature 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3
Supplier Device Package SOT-32-3 TO-126 SOT-32-3 SOT-32-3 SOT-32-3

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