Overview
The BD680AG is a medium-power PNP Darlington transistor produced by onsemi. This transistor is part of a series that includes the BD676, BD678, and BD682 models, all of which are designed for use as output devices in complementary general-purpose amplifier applications. The BD680AG is known for its high DC current gain and monolithic construction, making it suitable for a variety of power amplification tasks.
Key Specifications
| Rating | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 80 | Vdc |
| Collector-Base Voltage | VCB | 80 | Vdc |
| Emitter-Base Voltage | VEB | 5.0 | Vdc |
| Collector Current | IC | 4.0 | Adc |
| Base Current | IB | 0.1 | Adc |
| Total Device Dissipation @ TC = 25 °C | PD | 40 | W |
| Operating and Storage Junction Temperature Range | TJ, Tstg | −55 to +150 | °C |
| Thermal Resistance, Junction-to-Case | RJC | 3.13 | °C/W |
| DC Current Gain (hFE) @ IC = 2.0 Adc, VCE = 3.0 Vdc | hFE | 750 (Min) | |
| Collector-Emitter Saturation Voltage @ IC = 2.0 Adc, IB = 40 mAdc | VCE(sat) | 2.5 | Vdc |
Key Features
- High DC Current Gain: The BD680AG has a minimum DC current gain (hFE) of 750 at IC = 2.0 Adc and VCE = 3.0 Vdc.
- Monolithic Construction: These transistors are built with monolithic construction, ensuring reliability and performance.
- Complementary Devices: The BD680AG is complementary with other models such as BD675, BD677, BD679, and BD681.
- Equivalence to Other Models: The BD680AG is equivalent to MJE 702.
- Pb-Free Packages: The BD680AG is available in Pb-Free packages, making it RoHS compliant.
Applications
The BD680AG is designed for use in general-purpose amplifier applications, particularly as output devices. It is suitable for various power amplification tasks due to its high current gain and medium power handling capabilities.
- Complementary amplifier circuits
- Power amplifiers
- Switching applications
- Automotive and industrial control systems
Q & A
- What is the maximum collector-emitter voltage (VCEO) for the BD680AG?
The maximum collector-emitter voltage (VCEO) for the BD680AG is 80 Vdc.
- What is the minimum DC current gain (hFE) of the BD680AG?
The minimum DC current gain (hFE) of the BD680AG is 750 at IC = 2.0 Adc and VCE = 3.0 Vdc.
- What is the maximum collector current (IC) for the BD680AG?
The maximum collector current (IC) for the BD680AG is 4.0 Adc.
- Is the BD680AG RoHS compliant?
Yes, the BD680AG is available in Pb-Free packages, making it RoHS compliant.
- What is the thermal resistance, junction-to-case (RJC) for the BD680AG?
The thermal resistance, junction-to-case (RJC) for the BD680AG is 3.13 °C/W.
- What are the complementary devices for the BD680AG?
The BD680AG is complementary with devices such as BD675, BD677, BD679, and BD681.
- What is the collector-emitter saturation voltage (VCE(sat)) for the BD680AG?
The collector-emitter saturation voltage (VCE(sat)) for the BD680AG is 2.5 Vdc at IC = 2.0 Adc and IB = 40 mAdc.
- What are the typical applications for the BD680AG?
The BD680AG is typically used in general-purpose amplifier applications, power amplifiers, switching applications, and automotive and industrial control systems.
- What is the operating and storage junction temperature range for the BD680AG?
The operating and storage junction temperature range for the BD680AG is −55 to +150 °C.
- Is the BD680AG suitable for high-power applications?
The BD680AG is a medium-power transistor and is suitable for applications requiring up to 40 watts of power dissipation at 25 °C.
