Overview
The BCP5610E6327HTSA1 is a general-purpose NPN bipolar junction transistor (BJT) manufactured by Infineon Technologies. Although this specific part number is now obsolete and no longer in production, it was designed for a variety of medium-power applications. The transistor is packaged in a SOT-223 case, which is a surface-mount package suitable for high-density circuit designs.
Key Specifications
| Parameter | Value |
|---|---|
| Package | SOT-223 |
| Polarity | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Current - Collector (Max) | 1 A |
| DC Current Gain (hFE) (Min) | 100 @ 150mA, 2V |
| Power Dissipation (Max) | 1.35 W |
| Frequency - Transition | 100 MHz |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Chemical Content | Lead-free, Halogen-free |
Key Features
- General-purpose NPN bipolar junction transistor
- SOT-223 surface-mount package for high-density designs
- High collector current of up to 1 A and collector-emitter voltage of up to 80 V
- High DC current gain (hFE) with a minimum value of 100 at 150mA and 2V
- Transition frequency of 100 MHz, suitable for high-frequency applications
- Operating temperature up to 150°C (TJ)
- Lead-free and halogen-free, complying with environmental regulations
Applications
The BCP5610E6327HTSA1 transistor is suitable for a wide range of medium-power applications, including:
- General-purpose switching and amplification circuits
- Automotive systems requiring high reliability and temperature stability
- Industrial control circuits
- Consumer electronics where high current and voltage handling are necessary
Q & A
- What is the package type of the BCP5610E6327HTSA1 transistor?
The BCP5610E6327HTSA1 transistor is packaged in a SOT-223 surface-mount package. - What is the maximum collector current of the BCP5610E6327HTSA1 transistor?
The maximum collector current is 1 A. - What is the maximum collector-emitter voltage of the BCP5610E6327HTSA1 transistor?
The maximum collector-emitter voltage is 80 V. - What is the minimum DC current gain (hFE) of the BCP5610E6327HTSA1 transistor?
The minimum DC current gain (hFE) is 100 at 150mA and 2V. - What is the transition frequency of the BCP5610E6327HTSA1 transistor?
The transition frequency is 100 MHz. - Is the BCP5610E6327HTSA1 transistor lead-free and halogen-free?
Yes, the transistor is lead-free and halogen-free. - What is the operating temperature range of the BCP5610E6327HTSA1 transistor?
The operating temperature range is up to 150°C (TJ). - Is the BCP5610E6327HTSA1 transistor still in production?
No, the BCP5610E6327HTSA1 transistor is obsolete and no longer in production. - What are some common applications for the BCP5610E6327HTSA1 transistor?
Common applications include general-purpose switching and amplification circuits, automotive systems, industrial control circuits, and consumer electronics. - What are the available substitutes for the BCP5610E6327HTSA1 transistor?
Available substitutes include the BCP5610H6327XTSA1, which is a parametric equivalent.
