BCP5416H6433XTMA1
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Infineon Technologies BCP5416H6433XTMA1

Manufacturer No:
BCP5416H6433XTMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
TRANS NPN 45V 1A SOT223-4
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCP5416H6433XTMA1 is an NPN silicon AF (Audio Frequency) transistor produced by Infineon Technologies. This transistor is designed for use in AF driver and output stages, offering high collector current and low collector-emitter saturation voltage. It is part of the BCP54-BCP56 series, which includes complementary PNP types such as the BCP51-BCP53 series. The device is Pb-free and RoHS compliant, making it suitable for a wide range of applications where environmental considerations are important.

Key Specifications

ParameterSymbolValueUnit
Collector-emitter voltageVCEO45V
Collector-base voltageVCBO45V
Emitter-base voltageVEBO5V
Collector currentIC1A
Peak collector current (tp ≤ 10 ms)ICM1.5A
Base currentIB100mA
Peak base currentIBM200mA
Total power dissipation (TS ≤ 120°C)Ptot2W
Junction temperatureTj150°C
Storage temperatureTstg-65 to 150°C
Thermal Resistance (Junction - soldering point)RthJS≤ 15... K/W

Key Features

  • High collector current of up to 1 A and peak collector current of up to 1.5 A for 10 ms.
  • Low collector-emitter saturation voltage, ensuring efficient operation.
  • Pb-free and RoHS compliant, making it environmentally friendly.
  • Complementary PNP types available (BCP51-BCP53 series).
  • High junction temperature of up to 150°C, suitable for demanding applications.
  • Low thermal resistance, enhancing heat dissipation.

Applications

The BCP5416H6433XTMA1 transistor is suitable for various applications, including:

  • AF driver and output stages in audio equipment.
  • General-purpose amplification and switching circuits.
  • Automotive and industrial control systems where high reliability and environmental compliance are necessary.
  • Consumer electronics requiring robust and efficient transistor performance.

Q & A

  1. What is the collector-emitter voltage rating of the BCP5416H6433XTMA1 transistor?
    The collector-emitter voltage rating is 45 V.
  2. What is the maximum collector current for the BCP5416H6433XTMA1 transistor?
    The maximum collector current is 1 A.
  3. Is the BCP5416H6433XTMA1 transistor Pb-free and RoHS compliant?
    Yes, it is Pb-free and RoHS compliant.
  4. What is the junction temperature rating of the BCP5416H6433XTMA1 transistor?
    The junction temperature rating is up to 150°C.
  5. What are the complementary PNP types for the BCP5416H6433XTMA1 transistor?
    The complementary PNP types are from the BCP51-BCP53 series.
  6. What is the total power dissipation of the BCP5416H6433XTMA1 transistor at TS ≤ 120°C?
    The total power dissipation is 2 W.
  7. What is the thermal resistance (Junction - soldering point) of the BCP5416H6433XTMA1 transistor?
    The thermal resistance is ≤ 15 K/W.
  8. What are some common applications for the BCP5416H6433XTMA1 transistor?
    Common applications include AF driver and output stages, general-purpose amplification, automotive and industrial control systems, and consumer electronics.
  9. What is the peak base current rating for the BCP5416H6433XTMA1 transistor?
    The peak base current rating is 200 mA.
  10. What is the storage temperature range for the BCP5416H6433XTMA1 transistor?
    The storage temperature range is -65 to 150°C.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 2V
Power - Max:2 W
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-261-4, TO-261AA
Supplier Device Package:PG-SOT223-4
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Similar Products

Part Number BCP5416H6433XTMA1 BCP5116H6433XTMA1 BCP5316H6433XTMA1
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Not For New Designs Not For New Designs Not For New Designs
Transistor Type NPN PNP PNP
Current - Collector (Ic) (Max) 1 A 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 80 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V
Power - Max 2 W 2 W 2 W
Frequency - Transition 100MHz 125MHz 125MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA
Supplier Device Package PG-SOT223-4 PG-SOT223-4-10 PG-SOT223-4-10

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