BCP54H6327XTSA1
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Infineon Technologies BCP54H6327XTSA1

Manufacturer No:
BCP54H6327XTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
TRANS NPN 45V 1A SOT223-4
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCP54H6327XTSA1 is a high-performance NPN silicon bipolar junction transistor (BJT) manufactured by Infineon Technologies. This transistor is designed for use in audio frequency (AF) driver and output stages, offering high collector current and low collector-emitter saturation voltage. It is part of the BCP54 series, which includes complementary PNP types such as the BCP51-BCP53 series. The BCP54H6327XTSA1 is packaged in a Pb-free (RoHS compliant) SOT-223-4 surface mount package, ensuring environmental sustainability and ease of integration into modern electronic designs.

Key Specifications

Parameter Symbol Value Unit
Collector-Emitter Voltage VCEO 45 V
Collector-Base Voltage VCBO 45 V
Emitter-Base Voltage VEBO 5 V
Collector Current IC 1 A
Peak Collector Current (tp ≤ 10 ms) ICM 1.5 A
Base Current IB 100 mA
Peak Base Current IBM 200 mA
Total Power Dissipation (TS ≤ 120°C) Ptot 2 W
Junction Temperature Tj 150 °C
Storage Temperature Tstg -65 to 150 °C
Transition Frequency (fT) at VCE = 10 V fT 100 MHz

Key Features

  • High Collector Current: The BCP54H6327XTSA1 can handle a collector current of up to 1 A, making it suitable for high-current applications.
  • Low Collector-Emitter Saturation Voltage: This transistor features a low collector-emitter saturation voltage, which reduces power losses and improves efficiency.
  • Complementary Types: It has complementary PNP types (BCP51-BCP53 series), allowing for balanced circuit designs.
  • Pb-free (RoHS Compliant) Package: The SOT-223-4 package is lead-free, ensuring compliance with environmental regulations.
  • High Transition Frequency: With a transition frequency of up to 100 MHz, this transistor is suitable for high-frequency applications.

Applications

  • Audio Frequency (AF) Driver and Output Stages: Ideal for use in audio amplifiers and other AF applications due to its high current handling and low saturation voltage.
  • General Purpose Amplification: Suitable for a wide range of general-purpose amplification tasks where high current and low noise are required.
  • Automotive and Industrial Electronics: Qualified according to AEC Q101, making it reliable for use in automotive and industrial electronic systems.

Q & A

  1. What is the collector-emitter voltage rating of the BCP54H6327XTSA1?

    The collector-emitter voltage rating is 45 V.

  2. What is the maximum collector current for the BCP54H6327XTSA1?

    The maximum collector current is 1 A.

  3. What is the peak collector current for the BCP54H6327XTSA1?

    The peak collector current is 1.5 A for pulse durations of up to 10 ms.

  4. What is the total power dissipation of the BCP54H6327XTSA1?

    The total power dissipation is 2 W at a temperature of up to 120°C.

  5. What is the junction temperature rating of the BCP54H6327XTSA1?

    The junction temperature rating is up to 150°C.

  6. Is the BCP54H6327XTSA1 RoHS compliant?

    Yes, the BCP54H6327XTSA1 is Pb-free and RoHS compliant.

  7. What is the transition frequency of the BCP54H6327XTSA1?

    The transition frequency is up to 100 MHz at VCE = 10 V.

  8. What are the complementary types of the BCP54H6327XTSA1?

    The complementary PNP types are BCP51-BCP53 series.

  9. What is the package type of the BCP54H6327XTSA1?

    The package type is SOT-223-4.

  10. Is the BCP54H6327XTSA1 qualified for automotive use?

    Yes, it is qualified according to AEC Q101.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 150mA, 2V
Power - Max:2 W
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-261-4, TO-261AA
Supplier Device Package:PG-SOT223-4-10
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Similar Products

Part Number BCP54H6327XTSA1 BCP55H6327XTSA1 BCP51H6327XTSA1
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Not For New Designs Not For New Designs Active
Transistor Type NPN NPN PNP
Current - Collector (Ic) (Max) 1 A 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 45 V 60 V 45 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA, 2V 40 @ 150mA, 2V 40 @ 150mA, 2V
Power - Max 2 W 2 W 2 W
Frequency - Transition 100MHz 100MHz 125MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA
Supplier Device Package PG-SOT223-4-10 PG-SOT223-4-10 PG-SOT223-4

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