BCP5610H6327XTSA1
  • Share:

Infineon Technologies BCP5610H6327XTSA1

Manufacturer No:
BCP5610H6327XTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
TRANS NPN 80V 1A SOT223-4
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCP5610H6327XTSA1 is a bipolar junction transistor (BJT) produced by Infineon Technologies. This NPN transistor is designed for general-purpose applications, particularly in audio frequency (AF) driver and output stages. It is packaged in a PG-SOT223-4-10 surface mount format, making it suitable for a variety of modern electronic designs.

Key Specifications

Parameter Symbol Value Unit
Collector-Emitter Voltage VCEO 80 V
Collector-Base Voltage VCBO 100 V
Emitter-Base Voltage VEBO 5 V
Collector Current IC 1 A
Peak Collector Current (tp ≤ 10 ms) ICM 1.5 A
Base Current IB 100 mA
Peak Base Current IBM 200 mA
Total Power Dissipation (TS ≤ 120°C) Ptot 2 W
Junction Temperature Tj -65 to 150 °C
Storage Temperature Tstg -65 to 150 °C
Transition Frequency fT 100 MHz

Key Features

  • High Collector Current: The BCP5610 can handle a collector current of up to 1 A, making it suitable for high-current applications.
  • Low Collector-Emitter Saturation Voltage: This feature reduces power losses and improves efficiency in switching and amplification applications.
  • High Transition Frequency: With a transition frequency of 100 MHz, this transistor is capable of handling high-frequency signals.
  • Pb-free (RoHS compliant) Package: The transistor is packaged in a lead-free format, adhering to environmental regulations.
  • Qualified according to AEC Q101: This ensures the transistor meets automotive industry standards for reliability and performance.

Applications

  • Audio Frequency (AF) Driver and Output Stages: The BCP5610 is particularly suited for audio amplification and driver stages due to its high current handling and low noise characteristics.
  • General Purpose Amplification: It can be used in various general-purpose amplification circuits where high current gain and low saturation voltage are required.
  • Automotive Electronics: Given its AEC Q101 qualification, it is suitable for use in automotive electronic systems.

Q & A

  1. What is the collector-emitter voltage rating of the BCP5610H6327XTSA1?

    The collector-emitter voltage rating is 80 V.

  2. What is the maximum collector current this transistor can handle?

    The maximum collector current is 1 A.

  3. What is the transition frequency of the BCP5610H6327XTSA1?

    The transition frequency is 100 MHz.

  4. Is the BCP5610H6327XTSA1 RoHS compliant?

    Yes, it is Pb-free and RoHS compliant.

  5. What are the typical applications of the BCP5610H6327XTSA1?

    It is typically used in AF driver and output stages, general-purpose amplification, and automotive electronics.

  6. What is the junction temperature range for the BCP5610H6327XTSA1?

    The junction temperature range is -65 to 150°C.

  7. What is the total power dissipation rating for the BCP5610H6327XTSA1?

    The total power dissipation rating is 2 W at TS ≤ 120°C.

  8. Is the BCP5610H6327XTSA1 qualified according to any automotive standards?

    Yes, it is qualified according to AEC Q101.

  9. What is the package type of the BCP5610H6327XTSA1?

    The package type is PG-SOT223-4-10 surface mount.

  10. What are the key electrical characteristics of the BCP5610H6327XTSA1?

    Key characteristics include high collector current, low collector-emitter saturation voltage, and high transition frequency.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:63 @ 150mA, 2V
Power - Max:2 W
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-261-4, TO-261AA
Supplier Device Package:PG-SOT223-4-10
0 Remaining View Similar

In Stock

$0.21
3,543

Please send RFQ , we will respond immediately.

Same Series
BCP55H6327XTSA1
BCP55H6327XTSA1
TRANS NPN 60V 1A SOT223-4
BCP54H6327XTSA1
BCP54H6327XTSA1
TRANS NPN 45V 1A SOT223-4
BCP5416H6327XTSA1
BCP5416H6327XTSA1
TRANS NPN 45V 1A SOT223-4
BCP5416H6433XTMA1
BCP5416H6433XTMA1
TRANS NPN 45V 1A SOT223-4
BCP5516H6327XTSA1
BCP5516H6327XTSA1
TRANS NPN 60V 1A SOT223-4
BCP5610H6327XTSA1
BCP5610H6327XTSA1
TRANS NPN 80V 1A SOT223-4
BCP5616H6327XTSA1
BCP5616H6327XTSA1
TRANS NPN 80V 1A SOT223-4
BCP54E6327HTSA1
BCP54E6327HTSA1
TRANS NPN 45V 1A SOT223-4
BCP 56-10 E6433
BCP 56-10 E6433
TRANS NPN 80V 1A SOT223-4
BCP 56-10 H6433
BCP 56-10 H6433
TRANS NPN 80V 1A SOT223-4
BCP 55-16 E6327
BCP 55-16 E6327
TRANS NPN 60V 1A SOT223-4
BCP5616E6327HTSA1
BCP5616E6327HTSA1
TRANS NPN 80V 1A SOT223-4

Similar Products

Part Number BCP5610H6327XTSA1 BCP5616H6327XTSA1 BCP5310H6327XTSA1
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Not For New Designs Not For New Designs Not For New Designs
Transistor Type NPN NPN PNP
Current - Collector (Ic) (Max) 1 A 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V 80 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 63 @ 150mA, 2V 100 @ 150mA, 2V 63 @ 150mA, 2V
Power - Max 2 W 2 W 2 W
Frequency - Transition 100MHz 100MHz 125MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA
Supplier Device Package PG-SOT223-4-10 PG-SOT223-4-10 PG-SOT223-4-10

Related Product By Categories

BCX56-16,115
BCX56-16,115
Nexperia USA Inc.
TRANS NPN 80V 1A SOT89
BCX55-16,115
BCX55-16,115
Nexperia USA Inc.
TRANS NPN 60V 1A SOT89
MJL4302AG
MJL4302AG
onsemi
TRANS PNP 350V 15A TO264
BC857C/DG/B4235
BC857C/DG/B4235
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
MJF6388G
MJF6388G
onsemi
TRANS NPN DARL 100V 10A TO220FP
MCH6203-TL-E
MCH6203-TL-E
onsemi
TRANS NPN 50V 1A 6MCPH
BCX56-16115
BCX56-16115
NXP USA Inc.
NOW NEXPERIA SMALL SIGNAL BIPOLA
BD1366STU
BD1366STU
onsemi
TRANS PNP 45V 1.5A TO126-3
BC807-25W/MIX
BC807-25W/MIX
Nexperia USA Inc.
TRANS PNP 45V 0.5A SOT323
PBSS5350Z/ZLF
PBSS5350Z/ZLF
Nexperia USA Inc.
TRANS PNP 50V 3A SOT223
S8050-D-AP
S8050-D-AP
Micro Commercial Co
TRANS NPN 25V 0.5A TO92
BUK9Y41-80E/GFX
BUK9Y41-80E/GFX
NXP USA Inc.
MOSFET N-CH LFPAK

Related Product By Brand

BAT5405E6327HTSA1
BAT5405E6327HTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 30V SOT23
BAV70WH6327XTSA1
BAV70WH6327XTSA1
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT323
BAV70SH6827XTSA1
BAV70SH6827XTSA1
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT363
BAS16SH6727XTSA1
BAS16SH6727XTSA1
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT363
BSC016N06NSTATMA1
BSC016N06NSTATMA1
Infineon Technologies
MOSFET N-CH 60V 31A/100A TDSON
IRFP250NPBF
IRFP250NPBF
Infineon Technologies
MOSFET N-CH 200V 30A TO247AC
SPP20N60C3
SPP20N60C3
Infineon Technologies
POWER FIELD-EFFECT TRANSISTOR, 2
BSS138W L6327
BSS138W L6327
Infineon Technologies
MOSFET N-CH 60V 280MA SOT323-3
FF600R12ME4CPBPSA1
FF600R12ME4CPBPSA1
Infineon Technologies
IGBT MODULE VCES 600V 600A
SAK-TC1796-256F150E BE
SAK-TC1796-256F150E BE
Infineon Technologies
IC MCU 32BIT 2MB FLASH 416BGA
TLE9252VSKXUMA1
TLE9252VSKXUMA1
Infineon Technologies
TRANSCEIVER
IRS20957STRPBF
IRS20957STRPBF
Infineon Technologies
IC AMP CLASS D MONO 16SOIC