Overview
The BCP5610H6327XTSA1 is a bipolar junction transistor (BJT) produced by Infineon Technologies. This NPN transistor is designed for general-purpose applications, particularly in audio frequency (AF) driver and output stages. It is packaged in a PG-SOT223-4-10 surface mount format, making it suitable for a variety of modern electronic designs.
Key Specifications
Parameter | Symbol | Value | Unit |
---|---|---|---|
Collector-Emitter Voltage | VCEO | 80 | V |
Collector-Base Voltage | VCBO | 100 | V |
Emitter-Base Voltage | VEBO | 5 | V |
Collector Current | IC | 1 | A |
Peak Collector Current (tp ≤ 10 ms) | ICM | 1.5 | A |
Base Current | IB | 100 | mA |
Peak Base Current | IBM | 200 | mA |
Total Power Dissipation (TS ≤ 120°C) | Ptot | 2 | W |
Junction Temperature | Tj | -65 to 150 | °C |
Storage Temperature | Tstg | -65 to 150 | °C |
Transition Frequency | fT | 100 | MHz |
Key Features
- High Collector Current: The BCP5610 can handle a collector current of up to 1 A, making it suitable for high-current applications.
- Low Collector-Emitter Saturation Voltage: This feature reduces power losses and improves efficiency in switching and amplification applications.
- High Transition Frequency: With a transition frequency of 100 MHz, this transistor is capable of handling high-frequency signals.
- Pb-free (RoHS compliant) Package: The transistor is packaged in a lead-free format, adhering to environmental regulations.
- Qualified according to AEC Q101: This ensures the transistor meets automotive industry standards for reliability and performance.
Applications
- Audio Frequency (AF) Driver and Output Stages: The BCP5610 is particularly suited for audio amplification and driver stages due to its high current handling and low noise characteristics.
- General Purpose Amplification: It can be used in various general-purpose amplification circuits where high current gain and low saturation voltage are required.
- Automotive Electronics: Given its AEC Q101 qualification, it is suitable for use in automotive electronic systems.
Q & A
- What is the collector-emitter voltage rating of the BCP5610H6327XTSA1?
The collector-emitter voltage rating is 80 V.
- What is the maximum collector current this transistor can handle?
The maximum collector current is 1 A.
- What is the transition frequency of the BCP5610H6327XTSA1?
The transition frequency is 100 MHz.
- Is the BCP5610H6327XTSA1 RoHS compliant?
Yes, it is Pb-free and RoHS compliant.
- What are the typical applications of the BCP5610H6327XTSA1?
It is typically used in AF driver and output stages, general-purpose amplification, and automotive electronics.
- What is the junction temperature range for the BCP5610H6327XTSA1?
The junction temperature range is -65 to 150°C.
- What is the total power dissipation rating for the BCP5610H6327XTSA1?
The total power dissipation rating is 2 W at TS ≤ 120°C.
- Is the BCP5610H6327XTSA1 qualified according to any automotive standards?
Yes, it is qualified according to AEC Q101.
- What is the package type of the BCP5610H6327XTSA1?
The package type is PG-SOT223-4-10 surface mount.
- What are the key electrical characteristics of the BCP5610H6327XTSA1?
Key characteristics include high collector current, low collector-emitter saturation voltage, and high transition frequency.