BCP5610H6327XTSA1
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Infineon Technologies BCP5610H6327XTSA1

Manufacturer No:
BCP5610H6327XTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
TRANS NPN 80V 1A SOT223-4
Delivery:
Payment:
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Product Introduction

Overview

The BCP5610H6327XTSA1 is a bipolar junction transistor (BJT) produced by Infineon Technologies. This NPN transistor is designed for general-purpose applications, particularly in audio frequency (AF) driver and output stages. It is packaged in a PG-SOT223-4-10 surface mount format, making it suitable for a variety of modern electronic designs.

Key Specifications

Parameter Symbol Value Unit
Collector-Emitter Voltage VCEO 80 V
Collector-Base Voltage VCBO 100 V
Emitter-Base Voltage VEBO 5 V
Collector Current IC 1 A
Peak Collector Current (tp ≤ 10 ms) ICM 1.5 A
Base Current IB 100 mA
Peak Base Current IBM 200 mA
Total Power Dissipation (TS ≤ 120°C) Ptot 2 W
Junction Temperature Tj -65 to 150 °C
Storage Temperature Tstg -65 to 150 °C
Transition Frequency fT 100 MHz

Key Features

  • High Collector Current: The BCP5610 can handle a collector current of up to 1 A, making it suitable for high-current applications.
  • Low Collector-Emitter Saturation Voltage: This feature reduces power losses and improves efficiency in switching and amplification applications.
  • High Transition Frequency: With a transition frequency of 100 MHz, this transistor is capable of handling high-frequency signals.
  • Pb-free (RoHS compliant) Package: The transistor is packaged in a lead-free format, adhering to environmental regulations.
  • Qualified according to AEC Q101: This ensures the transistor meets automotive industry standards for reliability and performance.

Applications

  • Audio Frequency (AF) Driver and Output Stages: The BCP5610 is particularly suited for audio amplification and driver stages due to its high current handling and low noise characteristics.
  • General Purpose Amplification: It can be used in various general-purpose amplification circuits where high current gain and low saturation voltage are required.
  • Automotive Electronics: Given its AEC Q101 qualification, it is suitable for use in automotive electronic systems.

Q & A

  1. What is the collector-emitter voltage rating of the BCP5610H6327XTSA1?

    The collector-emitter voltage rating is 80 V.

  2. What is the maximum collector current this transistor can handle?

    The maximum collector current is 1 A.

  3. What is the transition frequency of the BCP5610H6327XTSA1?

    The transition frequency is 100 MHz.

  4. Is the BCP5610H6327XTSA1 RoHS compliant?

    Yes, it is Pb-free and RoHS compliant.

  5. What are the typical applications of the BCP5610H6327XTSA1?

    It is typically used in AF driver and output stages, general-purpose amplification, and automotive electronics.

  6. What is the junction temperature range for the BCP5610H6327XTSA1?

    The junction temperature range is -65 to 150°C.

  7. What is the total power dissipation rating for the BCP5610H6327XTSA1?

    The total power dissipation rating is 2 W at TS ≤ 120°C.

  8. Is the BCP5610H6327XTSA1 qualified according to any automotive standards?

    Yes, it is qualified according to AEC Q101.

  9. What is the package type of the BCP5610H6327XTSA1?

    The package type is PG-SOT223-4-10 surface mount.

  10. What are the key electrical characteristics of the BCP5610H6327XTSA1?

    Key characteristics include high collector current, low collector-emitter saturation voltage, and high transition frequency.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:63 @ 150mA, 2V
Power - Max:2 W
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-261-4, TO-261AA
Supplier Device Package:PG-SOT223-4-10
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Similar Products

Part Number BCP5610H6327XTSA1 BCP5616H6327XTSA1 BCP5310H6327XTSA1
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Not For New Designs Not For New Designs Not For New Designs
Transistor Type NPN NPN PNP
Current - Collector (Ic) (Max) 1 A 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V 80 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 63 @ 150mA, 2V 100 @ 150mA, 2V 63 @ 150mA, 2V
Power - Max 2 W 2 W 2 W
Frequency - Transition 100MHz 100MHz 125MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA
Supplier Device Package PG-SOT223-4-10 PG-SOT223-4-10 PG-SOT223-4-10

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