BCP5610H6327XTSA1
  • Share:

Infineon Technologies BCP5610H6327XTSA1

Manufacturer No:
BCP5610H6327XTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
TRANS NPN 80V 1A SOT223-4
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCP5610H6327XTSA1 is a bipolar junction transistor (BJT) produced by Infineon Technologies. This NPN transistor is designed for general-purpose applications, particularly in audio frequency (AF) driver and output stages. It is packaged in a PG-SOT223-4-10 surface mount format, making it suitable for a variety of modern electronic designs.

Key Specifications

Parameter Symbol Value Unit
Collector-Emitter Voltage VCEO 80 V
Collector-Base Voltage VCBO 100 V
Emitter-Base Voltage VEBO 5 V
Collector Current IC 1 A
Peak Collector Current (tp ≤ 10 ms) ICM 1.5 A
Base Current IB 100 mA
Peak Base Current IBM 200 mA
Total Power Dissipation (TS ≤ 120°C) Ptot 2 W
Junction Temperature Tj -65 to 150 °C
Storage Temperature Tstg -65 to 150 °C
Transition Frequency fT 100 MHz

Key Features

  • High Collector Current: The BCP5610 can handle a collector current of up to 1 A, making it suitable for high-current applications.
  • Low Collector-Emitter Saturation Voltage: This feature reduces power losses and improves efficiency in switching and amplification applications.
  • High Transition Frequency: With a transition frequency of 100 MHz, this transistor is capable of handling high-frequency signals.
  • Pb-free (RoHS compliant) Package: The transistor is packaged in a lead-free format, adhering to environmental regulations.
  • Qualified according to AEC Q101: This ensures the transistor meets automotive industry standards for reliability and performance.

Applications

  • Audio Frequency (AF) Driver and Output Stages: The BCP5610 is particularly suited for audio amplification and driver stages due to its high current handling and low noise characteristics.
  • General Purpose Amplification: It can be used in various general-purpose amplification circuits where high current gain and low saturation voltage are required.
  • Automotive Electronics: Given its AEC Q101 qualification, it is suitable for use in automotive electronic systems.

Q & A

  1. What is the collector-emitter voltage rating of the BCP5610H6327XTSA1?

    The collector-emitter voltage rating is 80 V.

  2. What is the maximum collector current this transistor can handle?

    The maximum collector current is 1 A.

  3. What is the transition frequency of the BCP5610H6327XTSA1?

    The transition frequency is 100 MHz.

  4. Is the BCP5610H6327XTSA1 RoHS compliant?

    Yes, it is Pb-free and RoHS compliant.

  5. What are the typical applications of the BCP5610H6327XTSA1?

    It is typically used in AF driver and output stages, general-purpose amplification, and automotive electronics.

  6. What is the junction temperature range for the BCP5610H6327XTSA1?

    The junction temperature range is -65 to 150°C.

  7. What is the total power dissipation rating for the BCP5610H6327XTSA1?

    The total power dissipation rating is 2 W at TS ≤ 120°C.

  8. Is the BCP5610H6327XTSA1 qualified according to any automotive standards?

    Yes, it is qualified according to AEC Q101.

  9. What is the package type of the BCP5610H6327XTSA1?

    The package type is PG-SOT223-4-10 surface mount.

  10. What are the key electrical characteristics of the BCP5610H6327XTSA1?

    Key characteristics include high collector current, low collector-emitter saturation voltage, and high transition frequency.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:63 @ 150mA, 2V
Power - Max:2 W
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-261-4, TO-261AA
Supplier Device Package:PG-SOT223-4-10
0 Remaining View Similar

In Stock

$0.21
3,543

Please send RFQ , we will respond immediately.

Same Series
BCP55H6327XTSA1
BCP55H6327XTSA1
TRANS NPN 60V 1A SOT223-4
BCP54H6327XTSA1
BCP54H6327XTSA1
TRANS NPN 45V 1A SOT223-4
BCP5416H6327XTSA1
BCP5416H6327XTSA1
TRANS NPN 45V 1A SOT223-4
BCP5416H6433XTMA1
BCP5416H6433XTMA1
TRANS NPN 45V 1A SOT223-4
BCP5516H6327XTSA1
BCP5516H6327XTSA1
TRANS NPN 60V 1A SOT223-4
BCP5610H6327XTSA1
BCP5610H6327XTSA1
TRANS NPN 80V 1A SOT223-4
BCP5616H6327XTSA1
BCP5616H6327XTSA1
TRANS NPN 80V 1A SOT223-4
BCP54E6327HTSA1
BCP54E6327HTSA1
TRANS NPN 45V 1A SOT223-4
BCP55E6327HTSA1
BCP55E6327HTSA1
TRANS NPN 60V 1A SOT223-4
BCP 54-16 H6778
BCP 54-16 H6778
TRANS NPN 45V 1A SOT223-4
BCP5416E6433HTMA1
BCP5416E6433HTMA1
TRANS NPN 45V 1A SOT223-4
BCP5616E6327HTSA1
BCP5616E6327HTSA1
TRANS NPN 80V 1A SOT223-4

Similar Products

Part Number BCP5610H6327XTSA1 BCP5616H6327XTSA1 BCP5310H6327XTSA1
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Not For New Designs Not For New Designs Not For New Designs
Transistor Type NPN NPN PNP
Current - Collector (Ic) (Max) 1 A 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V 80 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 63 @ 150mA, 2V 100 @ 150mA, 2V 63 @ 150mA, 2V
Power - Max 2 W 2 W 2 W
Frequency - Transition 100MHz 100MHz 125MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA
Supplier Device Package PG-SOT223-4-10 PG-SOT223-4-10 PG-SOT223-4-10

Related Product By Categories

BC817-25-7-F
BC817-25-7-F
Diodes Incorporated
TRANS NPN 45V 0.5A SOT23-3
BCP56,115
BCP56,115
Nexperia USA Inc.
TRANS NPN 80V 1A SOT223
BD13610STU
BD13610STU
onsemi
TRANS PNP 45V 1.5A TO126-3
BC857BWE6327
BC857BWE6327
Infineon Technologies
BIPOLAR GEN PURPOSE TRANSISTOR
PDTA114EU/ZL115
PDTA114EU/ZL115
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
BCP56-16/DG/B2115
BCP56-16/DG/B2115
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
BC857AW_R1_00001
BC857AW_R1_00001
Panjit International Inc.
TRANS PNP 45V 0.1A SOT323
BC846AW_R1_00001
BC846AW_R1_00001
Panjit International Inc.
TRANS NPN 65V 0.1A SOT323
BC846BQ-7-F
BC846BQ-7-F
Diodes Incorporated
SS MID-PERF TRANSISTOR SOT23 T&R
BC857CQCZ
BC857CQCZ
Nexperia USA Inc.
TRANS PNP 45V 0.1A DFN1412D-3
BC857CQB-QZ
BC857CQB-QZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
2N2907AP
2N2907AP
Microchip Technology
SMALL-SIGNAL BJT

Related Product By Brand

BAS70-06WE6327
BAS70-06WE6327
Infineon Technologies
SCHOTTKY DIODE
BAV 70T E6327
BAV 70T E6327
Infineon Technologies
DIODE ARRAY GP 80V 200MA SC75
BAV 70S E6433
BAV 70S E6433
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT363
BAS40B5003
BAS40B5003
Infineon Technologies
RECTIFIER DIODE, SCHOTTKY
BAS4002S-02LRHE6327
BAS4002S-02LRHE6327
Infineon Technologies
RECTIFIER DIODE, SCHOTTKY
BC857SH6827XTSA1
BC857SH6827XTSA1
Infineon Technologies
TRANS 2PNP 45V 0.1A SOT363
BC847SH6359XTMA1
BC847SH6359XTMA1
Infineon Technologies
TRANS 2NPN 45V 0.1A SOT363
BC859CE6327HTSA1
BC859CE6327HTSA1
Infineon Technologies
TRANS PNP 30V 0.1A SOT23
BSS123 E6433
BSS123 E6433
Infineon Technologies
MOSFET N-CH 100V 170MA SOT23-3
IR2113STRPBF
IR2113STRPBF
Infineon Technologies
IC GATE DRVR HALF-BRIDGE 16SOIC
ICE2PCS02GFUMA1
ICE2PCS02GFUMA1
Infineon Technologies
IC PFC CTRLR CCM 65KHZ 8DSO
BTS4142NNT
BTS4142NNT
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 SOT223