BCP 55-16 E6327
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Infineon Technologies BCP 55-16 E6327

Manufacturer No:
BCP 55-16 E6327
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
TRANS NPN 60V 1A SOT223-4
Delivery:
Payment:
iso14001
iso45001
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Product Introduction

Overview

The BCP 55-16 E6327 is an NPN silicon AF (Audio Frequency) transistor manufactured by Infineon Technologies. This transistor is designed for use in AF driver and output stages, offering high collector current and low collector-emitter saturation voltage. It is suitable for a variety of applications that require high performance and reliability.

Key Specifications

Parameter Value Unit
Collector Current (Ic) 1 A
Collector-Base Voltage (Vcb) 80 V
Collector-Emitter Voltage (Vce) 80 V
Emitter-Base Voltage (Veb) 5 V
DC Current Gain (hFE) @ Ic and Vce 100 @ 150mA, 2V -
Collector Cutoff Current (ICBO) 100 nA
Frequency Transition 125 MHz
Vce Saturation @ Ib, Ic 500mV @ 50mA, 500mA -
Power Dissipation 2 W
Operating Junction Temperature 150 °C
Package Type SOT-223 -

Key Features

  • High collector current of up to 1 A, making it suitable for large current loads.
  • Low collector-emitter saturation voltage, reducing energy consumption and improving efficiency.
  • High DC current gain (hFE) of 100 @ 150mA, 2V, ensuring high current amplification and stability in circuits.
  • High frequency transition of 125 MHz, suitable for high-frequency applications.
  • SOT-223 package with Tape & Reel (TR) for convenient integration and mass production.
  • Maximum power dissipation of 2 W, enabling it to handle large-scale electrical energy conversion and control tasks.
  • Good heat dissipation performance due to the PG-SOT223-4 packaging volume.

Applications

  • Analog Switch: Control the on and off of analog signals, such as in audio applications where bipolar transistors can amplify and cut off sound signals.
  • Drive Circuit: Drive various load devices, including electric motors and displays.
  • Microwave Amplifier: Suitable for microwave amplifier circuits due to its high-frequency response characteristics.
  • Constant Current Source: Can be used as a constant current source in various DC power supply circuits.

Q & A

  1. What is the maximum collector current of the BCP 55-16 E6327 transistor?

    The maximum collector current is 1 A.

  2. What is the collector-emitter saturation voltage of the BCP 55-16 E6327?

    The Vce Saturation is 500mV @ 50mA, 500mA.

  3. What is the DC current gain (hFE) of the BCP 55-16 E6327?

    The DC current gain (hFE) is 100 @ 150mA, 2V.

  4. What is the frequency transition of the BCP 55-16 E6327?

    The frequency transition is 125 MHz.

  5. What is the maximum power dissipation of the BCP 55-16 E6327?

    The maximum power dissipation is 2 W.

  6. What package type does the BCP 55-16 E6327 use?

    The package type is SOT-223.

  7. What are some common applications of the BCP 55-16 E6327 transistor?

    Common applications include analog switches, drive circuits, microwave amplifiers, and constant current sources.

  8. Is the BCP 55-16 E6327 RoHS compliant?

    Yes, the BCP 55-16 E6327 is Lead Free / RoHS Compliant.

  9. What is the operating junction temperature of the BCP 55-16 E6327?

    The operating junction temperature is up to 150°C.

  10. How does the packaging of the BCP 55-16 E6327 support mass production?

    The packaging is in Tape & Reel (TR) format, which is conducive to mass production and automated assembly.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):60 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 2V
Power - Max:2 W
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-261-4, TO-261AA
Supplier Device Package:PG-SOT223-4
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Similar Products

Part Number BCP 55-16 E6327 BCP 53-16 E6327 BCP 54-16 E6327
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete
Transistor Type NPN PNP NPN
Current - Collector (Ic) (Max) 1 A 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 60 V 80 V 45 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V
Power - Max 2 W 2 W 2 W
Frequency - Transition 100MHz 125MHz 100MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-261-4, TO-261AA SOT-143R TO-261-4, TO-261AA
Supplier Device Package PG-SOT223-4 PG-SOT-143R-3D PG-SOT223-4

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