BCP 55-16 E6327
  • Share:

Infineon Technologies BCP 55-16 E6327

Manufacturer No:
BCP 55-16 E6327
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
TRANS NPN 60V 1A SOT223-4
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCP 55-16 E6327 is an NPN silicon AF (Audio Frequency) transistor manufactured by Infineon Technologies. This transistor is designed for use in AF driver and output stages, offering high collector current and low collector-emitter saturation voltage. It is suitable for a variety of applications that require high performance and reliability.

Key Specifications

Parameter Value Unit
Collector Current (Ic) 1 A
Collector-Base Voltage (Vcb) 80 V
Collector-Emitter Voltage (Vce) 80 V
Emitter-Base Voltage (Veb) 5 V
DC Current Gain (hFE) @ Ic and Vce 100 @ 150mA, 2V -
Collector Cutoff Current (ICBO) 100 nA
Frequency Transition 125 MHz
Vce Saturation @ Ib, Ic 500mV @ 50mA, 500mA -
Power Dissipation 2 W
Operating Junction Temperature 150 °C
Package Type SOT-223 -

Key Features

  • High collector current of up to 1 A, making it suitable for large current loads.
  • Low collector-emitter saturation voltage, reducing energy consumption and improving efficiency.
  • High DC current gain (hFE) of 100 @ 150mA, 2V, ensuring high current amplification and stability in circuits.
  • High frequency transition of 125 MHz, suitable for high-frequency applications.
  • SOT-223 package with Tape & Reel (TR) for convenient integration and mass production.
  • Maximum power dissipation of 2 W, enabling it to handle large-scale electrical energy conversion and control tasks.
  • Good heat dissipation performance due to the PG-SOT223-4 packaging volume.

Applications

  • Analog Switch: Control the on and off of analog signals, such as in audio applications where bipolar transistors can amplify and cut off sound signals.
  • Drive Circuit: Drive various load devices, including electric motors and displays.
  • Microwave Amplifier: Suitable for microwave amplifier circuits due to its high-frequency response characteristics.
  • Constant Current Source: Can be used as a constant current source in various DC power supply circuits.

Q & A

  1. What is the maximum collector current of the BCP 55-16 E6327 transistor?

    The maximum collector current is 1 A.

  2. What is the collector-emitter saturation voltage of the BCP 55-16 E6327?

    The Vce Saturation is 500mV @ 50mA, 500mA.

  3. What is the DC current gain (hFE) of the BCP 55-16 E6327?

    The DC current gain (hFE) is 100 @ 150mA, 2V.

  4. What is the frequency transition of the BCP 55-16 E6327?

    The frequency transition is 125 MHz.

  5. What is the maximum power dissipation of the BCP 55-16 E6327?

    The maximum power dissipation is 2 W.

  6. What package type does the BCP 55-16 E6327 use?

    The package type is SOT-223.

  7. What are some common applications of the BCP 55-16 E6327 transistor?

    Common applications include analog switches, drive circuits, microwave amplifiers, and constant current sources.

  8. Is the BCP 55-16 E6327 RoHS compliant?

    Yes, the BCP 55-16 E6327 is Lead Free / RoHS Compliant.

  9. What is the operating junction temperature of the BCP 55-16 E6327?

    The operating junction temperature is up to 150°C.

  10. How does the packaging of the BCP 55-16 E6327 support mass production?

    The packaging is in Tape & Reel (TR) format, which is conducive to mass production and automated assembly.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):60 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 2V
Power - Max:2 W
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-261-4, TO-261AA
Supplier Device Package:PG-SOT223-4
0 Remaining View Similar

In Stock

-
449

Please send RFQ , we will respond immediately.

Same Series
BCP55H6327XTSA1
BCP55H6327XTSA1
TRANS NPN 60V 1A SOT223-4
BCP54H6327XTSA1
BCP54H6327XTSA1
TRANS NPN 45V 1A SOT223-4
BCP5416H6327XTSA1
BCP5416H6327XTSA1
TRANS NPN 45V 1A SOT223-4
BCP5416H6433XTMA1
BCP5416H6433XTMA1
TRANS NPN 45V 1A SOT223-4
BCP5516H6327XTSA1
BCP5516H6327XTSA1
TRANS NPN 60V 1A SOT223-4
BCP54E6327HTSA1
BCP54E6327HTSA1
TRANS NPN 45V 1A SOT223-4
BCP 54-16 E6327
BCP 54-16 E6327
TRANS NPN 45V 1A SOT223-4
BCP 54-16 H6778
BCP 54-16 H6778
TRANS NPN 45V 1A SOT223-4
BCP 56-10 H6433
BCP 56-10 H6433
TRANS NPN 80V 1A SOT223-4
BCP5416E6433HTMA1
BCP5416E6433HTMA1
TRANS NPN 45V 1A SOT223-4
BCP 55-16 E6327
BCP 55-16 E6327
TRANS NPN 60V 1A SOT223-4
BCP5616E6327HTSA1
BCP5616E6327HTSA1
TRANS NPN 80V 1A SOT223-4

Similar Products

Part Number BCP 55-16 E6327 BCP 53-16 E6327 BCP 54-16 E6327
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete
Transistor Type NPN PNP NPN
Current - Collector (Ic) (Max) 1 A 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 60 V 80 V 45 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V
Power - Max 2 W 2 W 2 W
Frequency - Transition 100MHz 125MHz 100MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-261-4, TO-261AA SOT-143R TO-261-4, TO-261AA
Supplier Device Package PG-SOT223-4 PG-SOT-143R-3D PG-SOT223-4

Related Product By Categories

SBC817-40LT1G
SBC817-40LT1G
onsemi
TRANS NPN 45V 0.5A SOT23-3
BDW93CTU
BDW93CTU
onsemi
TRANS NPN DARL 100V 12A TO220-3
BD140G
BD140G
onsemi
TRANS PNP 80V 1.5A TO126
BC859C_R1_00001
BC859C_R1_00001
Panjit International Inc.
TRANS PNP 30V 0.1A SOT23
BC847CW_R1_00001
BC847CW_R1_00001
Panjit International Inc.
TRANS NPN 45V 0.1A SOT323
BC846BQBZ
BC846BQBZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
BC847BQB-QZ
BC847BQB-QZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
BC847BWH6327XTSA1
BC847BWH6327XTSA1
Infineon Technologies
TRANS NPN 45V 0.1A SOT323
NSVMUN5237T1G
NSVMUN5237T1G
onsemi
NSVMUN5237 - NPN BIPOLAR DIGITAL
MMBT3904TT1
MMBT3904TT1
onsemi
TRANS NPN 40V 200MA SOT416
BCP5610E6327HTSA1
BCP5610E6327HTSA1
Infineon Technologies
TRANS NPN 80V 1A SOT223-4
BCX56-16 TR
BCX56-16 TR
Central Semiconductor Corp
TRANS NPN 80V 1A SOT89

Related Product By Brand

BAV70UE6327HTSA1
BAV70UE6327HTSA1
Infineon Technologies
DIODE ARRAY GP 80V 200MA SC74-6
BAS7004WE6327HTSA1
BAS7004WE6327HTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 70V SOT323
BC847PNE6433BTMA1
BC847PNE6433BTMA1
Infineon Technologies
TRANS NPN/PNP 45V 0.1A SOT363-6
BC857B E6327
BC857B E6327
Infineon Technologies
TRANS PNP 45V 0.1A SOT23
BC848BL3E6327XTMA1
BC848BL3E6327XTMA1
Infineon Technologies
BC848 - GENERAL PURPOSE TRANSIST
BC857CB5003XT
BC857CB5003XT
Infineon Technologies
TRANS PNP 45V 0.1A SOT23
IRF630NPBF
IRF630NPBF
Infineon Technologies
MOSFET N-CH 200V 9.3A TO220AB
IRFP064NPBF
IRFP064NPBF
Infineon Technologies
MOSFET N-CH 55V 110A TO247AC
SPP20N60C3HKSA1
SPP20N60C3HKSA1
Infineon Technologies
MOSFET N-CH 600V 20.7A TO220-3
BSP452HUMA1
BSP452HUMA1
Infineon Technologies
IC PWR SWTCH N-CHAN 1:1 SOT223-4
BTS5215LAUMA1
BTS5215LAUMA1
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 DSO-12
BTS711L1NT
BTS711L1NT
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 DSO-20