BCP5416H6327XTSA1
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Infineon Technologies BCP5416H6327XTSA1

Manufacturer No:
BCP5416H6327XTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
TRANS NPN 45V 1A SOT223-4
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCP5416H6327XTSA1 is a PNP bipolar transistor manufactured by Infineon Technologies. It is part of the BCP54...-BCP56... series, which are NPN silicon AF transistors, but the BCP5416 specifically is a PNP type. This transistor is designed for audio frequency (AF) driver and output stages, offering high performance and reliability.

Key Specifications

ParameterSymbolValueUnit
Collector-emitter voltageVCEO45V
Collector-base voltageVCBO45V
Emitter-base voltageVEBO5V
Collector currentIC1A
Peak collector current (tp ≤ 10 ms)ICM1.5A
Base currentIB100mA
Peak base currentIBM200mA
Total power dissipation (TS ≤ 120°C)Ptot2W
Junction temperatureTj150°C
Storage temperatureTstg-65 to 150°C
Thermal Resistance (Junction - soldering point)RthJS≤ 15... K/W

Key Features

  • High collector current
  • Low collector-emitter saturation voltage
  • Pb-free (RoHS compliant) package
  • Qualified according to AEC Q101
  • Complementary types available (BCP51...BCP53 for PNP)

Applications

The BCP5416H6327XTSA1 is suitable for audio frequency (AF) driver and output stages. It is also applicable in various general-purpose transistor applications where high current gain and low noise are required.

Q & A

  1. What is the collector-emitter voltage of the BCP5416H6327XTSA1? The collector-emitter voltage (VCEO) is 45 V.
  2. What is the maximum collector current for this transistor? The maximum collector current (IC) is 1 A.
  3. What is the peak collector current for a pulse duration of 10 ms or less? The peak collector current (ICM) is 1.5 A for tp ≤ 10 ms.
  4. Is the BCP5416H6327XTSA1 RoHS compliant? Yes, it is Pb-free and RoHS compliant.
  5. What are the complementary types for this transistor? The complementary types are BCP51...BCP53 (PNP).
  6. What is the junction temperature rating for this transistor? The junction temperature (Tj) is 150 °C.
  7. What is the storage temperature range for this transistor? The storage temperature range (Tstg) is -65 to 150 °C.
  8. What is the thermal resistance from junction to soldering point? The thermal resistance (RthJS) is ≤ 15 K/W.
  9. What are the typical applications for the BCP5416H6327XTSA1? It is typically used in AF driver and output stages.
  10. Is the BCP5416H6327XTSA1 qualified according to any automotive standards? Yes, it is qualified according to AEC Q101.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 2V
Power - Max:2 W
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-261-4, TO-261AA
Supplier Device Package:PG-SOT223-4-10
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Similar Products

Part Number BCP5416H6327XTSA1 BCP5516H6327XTSA1 BCP5616H6327XTSA1 BCP5116H6327XTSA1 BCP5216H6327XTSA1 BCP5316H6327XTSA1
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Not For New Designs Not For New Designs Not For New Designs Not For New Designs Not For New Designs Not For New Designs
Transistor Type NPN NPN NPN PNP PNP PNP
Current - Collector (Ic) (Max) 1 A 1 A 1 A 1 A 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 45 V 60 V 80 V 45 V 60 V 80 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V
Power - Max 2 W 2 W 2 W 2 W 2 W 2 W
Frequency - Transition 100MHz 100MHz 100MHz 125MHz 125MHz 125MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA
Supplier Device Package PG-SOT223-4-10 PG-SOT223-4-10 PG-SOT223-4-10 PG-SOT223-4-24 PG-SOT223-4-10 PG-SOT223-4-24

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