Overview
The IKW75N60TAFKSA1 is a high-performance Insulated Gate Bipolar Transistor (IGBT) produced by Infineon Technologies. It is part of the TRENCHSTOP™ series, which is known for its advanced technology and robust performance. This IGBT is designed for high-power applications, offering low losses and high switching speeds. It features a soft, fast recovery anti-parallel emitter-controlled diode, making it suitable for a wide range of industrial and automotive applications.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-emitter voltage, Tj ≥ 25°C | VCE | 600 | V |
| DC collector current, limited by Tjmax at TC = 25°C | IC | 75 | A |
| Pulsed collector current, limited by Tjmax | ICpuls | 225 | A |
| Gate-emitter voltage | VGE | ±20 | V |
| Short circuit withstand time | tSC | 5 μs | |
| Maximum Junction Temperature | Tj,max | 175°C | |
| Storage temperature | Tstg | -55 to +150°C | |
| Soldering temperature, 1.6mm from case for 10s | Tsold | 260°C |
Key Features
- Very low VCE(sat) of 1.5V (typical) at Tj=25°C, ensuring low power losses.
- Maximum Junction Temperature of 175°C, providing high thermal stability.
- Short circuit withstand time of 5μs, enhancing reliability under fault conditions.
- Positive temperature coefficient in VCE(sat), contributing to stable operation.
- Tight parameter distribution and high ruggedness.
- Very high switching speed and low EMI.
- Soft, fast recovery anti-parallel emitter-controlled diode.
- Pb-free lead plating and RoHS compliant.
Applications
- Frequency Converters
- Uninterrupted Power Supply (UPS)
- Industrial automation and drives
- Motor control systems
- Power transmission and distribution
- Automotive applications, including electric vehicles and charging infrastructure
- Renewable energy systems, such as wind and photovoltaic installations
Q & A
- What is the collector-emitter voltage rating of the IKW75N60TAFKSA1?
The collector-emitter voltage rating is 600V.
- What is the maximum DC collector current at 25°C?
The maximum DC collector current is 75A.
- What is the short circuit withstand time of this IGBT?
The short circuit withstand time is 5μs.
- What is the maximum junction temperature for this component?
The maximum junction temperature is 175°C.
- Is the IKW75N60TAFKSA1 RoHS compliant?
Yes, it is RoHS compliant and has Pb-free lead plating.
- What type of diode is integrated with this IGBT?
A soft, fast recovery anti-parallel emitter-controlled diode.
- What are some common applications for this IGBT?
Frequency converters, UPS, industrial automation, motor control, and automotive applications.
- What is the storage temperature range for this component?
The storage temperature range is -55 to +150°C.
- What is the soldering temperature for this component?
The soldering temperature is up to 260°C for 10 seconds, measured 1.6mm from the case.
- Does the IKW75N60TAFKSA1 have a positive temperature coefficient in VCE(sat)?
Yes, it has a positive temperature coefficient in VCE(sat), which contributes to stable operation.
