FGY75T95SQDT
  • Share:

onsemi FGY75T95SQDT

Manufacturer No:
FGY75T95SQDT
Manufacturer:
onsemi
Package:
Tube
Description:
IGBT 950V 75A
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FGY75T95SQDT is a high-performance Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. This device is part of the Trench Field Stop IGBT family, known for its high current capability, low saturation voltage, and fast switching characteristics. The FGY75T95SQDT is designed to operate in a wide range of applications requiring high power handling and efficient switching.

Key Specifications

ParameterValueUnit
Maximum Collector Current150A
Maximum Collector Emitter Breakdown Voltage950V
Maximum Collector Emitter Saturation VoltageN/AV
Maximum Gate Emitter Voltage±20V
Maximum Junction Temperature175°C
Maximum Power Dissipation434W
Pulsed Collector Current300A
Reverse Recovery Time259ns
Gate Charge137nC
Package TypeTO-247-3
Operating Temperature Range-55°C to 175°C

Key Features

  • High Current Capability: The FGY75T95SQDT can handle a maximum collector current of 150A and a pulsed collector current of 300A.
  • Low Saturation Voltage: It features a low collector-emitter saturation voltage, typically 1.31V at 75A, enhancing efficiency.
  • Fast Switching: The device is characterized by fast switching times, including turn-on and turn-off delay times and rise and fall times.
  • Positive Temperature Coefficient: This allows for easy parallel operation, making it suitable for high-power applications.
  • Tight Parameter Distribution: Ensures consistent performance across multiple devices.
  • RoHS Compliant: The device is Pb-free and compliant with RoHS regulations.

Applications

The FGY75T95SQDT is suitable for various high-power applications, including:

  • Solar Inverters: Due to its high current handling and fast switching capabilities, it is ideal for solar inverter systems.
  • Industrial Power Supplies: Its high power dissipation and low saturation voltage make it a good fit for industrial power supply systems.
  • Motor Control Systems: The device’s fast switching and high current capability are beneficial in motor control applications.

Q & A

  1. What is the maximum collector current of the FGY75T95SQDT?
    The maximum collector current is 150A.
  2. What is the maximum collector-emitter breakdown voltage?
    The maximum collector-emitter breakdown voltage is 950V.
  3. What is the package type of the FGY75T95SQDT?
    The package type is TO-247-3.
  4. What is the operating temperature range of the device?
    The operating temperature range is from -55°C to 175°C.
  5. Is the FGY75T95SQDT RoHS compliant?
    Yes, the device is Pb-free and RoHS compliant.
  6. What is the typical collector-emitter saturation voltage at 75A?
    The typical collector-emitter saturation voltage at 75A is 1.31V.
  7. What are some common applications of the FGY75T95SQDT?
    Common applications include solar inverters, industrial power supplies, and motor control systems.
  8. What is the reverse recovery time of the device?
    The reverse recovery time is 259ns.
  9. What is the gate charge of the FGY75T95SQDT?
    The gate charge is 137nC.
  10. Is the FGY75T95SQDT suitable for high-power applications?
    Yes, it is designed for high-power applications due to its high current capability and fast switching characteristics.

Product Attributes

IGBT Type:Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):950 V
Current - Collector (Ic) (Max):150 A
Current - Collector Pulsed (Icm):300 A
Vce(on) (Max) @ Vge, Ic:2.11V @ 15V, 75A
Power - Max:434 W
Switching Energy:8.8mJ (on), 3.2mJ (off)
Input Type:Standard
Gate Charge:137 nC
Td (on/off) @ 25°C:28.8ns/117ns
Test Condition:600V, 75A, 4.7Ohm, 15V
Reverse Recovery Time (trr):259 ns
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:TO-247-3
0 Remaining View Similar

In Stock

$9.39
7

Please send RFQ , we will respond immediately.

Same Series
DD15S20JVL0/AA
DD15S20JVL0/AA
CONN D-SUB HD RCPT 15P SLDR CUP
RD15S10HT20/AA
RD15S10HT20/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S20Z0X/AA
DD15S20Z0X/AA
CONN D-SUB HD RCPT 15P SLDR CUP
RD15S10HE30/AA
RD15S10HE30/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S200E3S/AA
DD15S200E3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HE30/AA
CBC13W3S10HE30/AA
CONN D-SUB RCPT 13POS CRIMP
CBC46W4S100E20/AA
CBC46W4S100E20/AA
CONN D-SUB RCPT 46POS CRIMP
DD26S10H00/AA
DD26S10H00/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S10HT20/AA
DD26S10HT20/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S2S50T2X
DD26S2S50T2X
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S50TX/AA
DD44S32S50TX/AA
CONN D-SUB HD RCPT 44P VERT SLDR
CBC46W4S100T2S/AA
CBC46W4S100T2S/AA
CONN D-SUB RCPT 46POS CRIMP

Similar Products

Part Number FGY75T95SQDT FGY75T95LQDT
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
IGBT Type Trench Field Stop Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 950 V 950 V
Current - Collector (Ic) (Max) 150 A 150 A
Current - Collector Pulsed (Icm) 300 A 225 A
Vce(on) (Max) @ Vge, Ic 2.11V @ 15V, 75A 1.69V @ 15V, 75A
Power - Max 434 W 453 W
Switching Energy 8.8mJ (on), 3.2mJ (off) 2mJ (on), 1.8mJ (off)
Input Type Standard Standard
Gate Charge 137 nC 663.3 nC
Td (on/off) @ 25°C 28.8ns/117ns 52ns/496ns
Test Condition 600V, 75A, 4.7Ohm, 15V 600V, 37.5A, 4.7Ohm, 15V
Reverse Recovery Time (trr) 259 ns 259 ns
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-247-3
Supplier Device Package TO-247-3 TO-247-3

Related Product By Categories

FGA20N120FTDTU
FGA20N120FTDTU
onsemi
IGBT 1200V 40A 298W TO3PN
STGW20NC60V
STGW20NC60V
STMicroelectronics
IGBT 600V 60A 200W TO247
STGW60V60DF
STGW60V60DF
STMicroelectronics
IGBT 600V 80A 375W TO247
STGWA50IH65DF
STGWA50IH65DF
STMicroelectronics
TRENCH GATE FIELD-STOP IGBT 650
FGA25N120ANTDTU-F109
FGA25N120ANTDTU-F109
onsemi
IGBT 1200V 50A 312W TO3P
NGTB50N120FL2WG
NGTB50N120FL2WG
onsemi
IGBT 1200V 100A 535W TO247
STGB6NC60HDT4
STGB6NC60HDT4
STMicroelectronics
IGBT 600V 15A 56W D2PAK
STGF19NC60KD
STGF19NC60KD
STMicroelectronics
IGBT 600V 16A 32W TO220FP
STGYA120M65DF2AG
STGYA120M65DF2AG
STMicroelectronics
IGBT
AFGB30T65SQDN
AFGB30T65SQDN
onsemi
650V/30A FS4 IGBT TO263 A
NGTB40N120FL2WG
NGTB40N120FL2WG
onsemi
IGBT TRENCH/FS 1200V 80A TO247
FGH40T65SQD_F155
FGH40T65SQD_F155
onsemi
650V FS4 TRENCH IGBT

Related Product By Brand

SZESD7461N2T5G
SZESD7461N2T5G
onsemi
TVS DIODE 16VWM 39VC 2XDFN
SMUN5311DW1T3G
SMUN5311DW1T3G
onsemi
TRANS NPN/PNP PREBIAS SOT363
2N6284G
2N6284G
onsemi
TRANS NPN DARL 100V 20A TO204
MJD44H11G
MJD44H11G
onsemi
TRANS NPN 80V 8A DPAK
NVD5407NT4G
NVD5407NT4G
onsemi
MOSFET N-CH 40V 7.6A/38A DPAK
LB11861MC-AH
LB11861MC-AH
onsemi
IC MOTOR DRIVER 4.5V-16V 10MFPSK
LM385Z-2.5RPG
LM385Z-2.5RPG
onsemi
IC VREF SHUNT 3% TO92-3
UC3843AD1G
UC3843AD1G
onsemi
UC3843 CURRENT-MODE PWM CONTROLL
MC7812BTG
MC7812BTG
onsemi
IC REG LINEAR 12V 1A TO220AB
NCV4276CDS50R4G
NCV4276CDS50R4G
onsemi
IC REG LINEAR 5V 400MA D2PAK-5
NCP163AFCT280T2G
NCP163AFCT280T2G
onsemi
IC REG LINEAR 2.8V 250MA 4WLCSP
MC7808BTG
MC7808BTG
onsemi
IC REG LINEAR 8V 1A TO220AB