FGY75T95SQDT
  • Share:

onsemi FGY75T95SQDT

Manufacturer No:
FGY75T95SQDT
Manufacturer:
onsemi
Package:
Tube
Description:
IGBT 950V 75A
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FGY75T95SQDT is a high-performance Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. This device is part of the Trench Field Stop IGBT family, known for its high current capability, low saturation voltage, and fast switching characteristics. The FGY75T95SQDT is designed to operate in a wide range of applications requiring high power handling and efficient switching.

Key Specifications

ParameterValueUnit
Maximum Collector Current150A
Maximum Collector Emitter Breakdown Voltage950V
Maximum Collector Emitter Saturation VoltageN/AV
Maximum Gate Emitter Voltage±20V
Maximum Junction Temperature175°C
Maximum Power Dissipation434W
Pulsed Collector Current300A
Reverse Recovery Time259ns
Gate Charge137nC
Package TypeTO-247-3
Operating Temperature Range-55°C to 175°C

Key Features

  • High Current Capability: The FGY75T95SQDT can handle a maximum collector current of 150A and a pulsed collector current of 300A.
  • Low Saturation Voltage: It features a low collector-emitter saturation voltage, typically 1.31V at 75A, enhancing efficiency.
  • Fast Switching: The device is characterized by fast switching times, including turn-on and turn-off delay times and rise and fall times.
  • Positive Temperature Coefficient: This allows for easy parallel operation, making it suitable for high-power applications.
  • Tight Parameter Distribution: Ensures consistent performance across multiple devices.
  • RoHS Compliant: The device is Pb-free and compliant with RoHS regulations.

Applications

The FGY75T95SQDT is suitable for various high-power applications, including:

  • Solar Inverters: Due to its high current handling and fast switching capabilities, it is ideal for solar inverter systems.
  • Industrial Power Supplies: Its high power dissipation and low saturation voltage make it a good fit for industrial power supply systems.
  • Motor Control Systems: The device’s fast switching and high current capability are beneficial in motor control applications.

Q & A

  1. What is the maximum collector current of the FGY75T95SQDT?
    The maximum collector current is 150A.
  2. What is the maximum collector-emitter breakdown voltage?
    The maximum collector-emitter breakdown voltage is 950V.
  3. What is the package type of the FGY75T95SQDT?
    The package type is TO-247-3.
  4. What is the operating temperature range of the device?
    The operating temperature range is from -55°C to 175°C.
  5. Is the FGY75T95SQDT RoHS compliant?
    Yes, the device is Pb-free and RoHS compliant.
  6. What is the typical collector-emitter saturation voltage at 75A?
    The typical collector-emitter saturation voltage at 75A is 1.31V.
  7. What are some common applications of the FGY75T95SQDT?
    Common applications include solar inverters, industrial power supplies, and motor control systems.
  8. What is the reverse recovery time of the device?
    The reverse recovery time is 259ns.
  9. What is the gate charge of the FGY75T95SQDT?
    The gate charge is 137nC.
  10. Is the FGY75T95SQDT suitable for high-power applications?
    Yes, it is designed for high-power applications due to its high current capability and fast switching characteristics.

Product Attributes

IGBT Type:Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):950 V
Current - Collector (Ic) (Max):150 A
Current - Collector Pulsed (Icm):300 A
Vce(on) (Max) @ Vge, Ic:2.11V @ 15V, 75A
Power - Max:434 W
Switching Energy:8.8mJ (on), 3.2mJ (off)
Input Type:Standard
Gate Charge:137 nC
Td (on/off) @ 25°C:28.8ns/117ns
Test Condition:600V, 75A, 4.7Ohm, 15V
Reverse Recovery Time (trr):259 ns
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:TO-247-3
0 Remaining View Similar

In Stock

$9.39
7

Please send RFQ , we will respond immediately.

Same Series
DD15S20WT2S/AA
DD15S20WT2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S100E2X/AA
DD26S100E2X/AA
CONN D-SUB HD RCPT 26POS CRIMP
CBC9W4S10HE2X/AA
CBC9W4S10HE2X/AA
CONN D-SUB RCPT 9POS CRIMP
RD15S10HE30/AA
RD15S10HE30/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S200ES/AA
DD15S200ES/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S500X
DD26S2S500X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200T20
DD26S200T20
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0V30
DD26S2S0V30
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0V3X/AA
DD26S2S0V3X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S00X
DD44S32S00X
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S200E0/AA
DD26S200E0/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20W0X
DD26S20W0X
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number FGY75T95SQDT FGY75T95LQDT
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
IGBT Type Trench Field Stop Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 950 V 950 V
Current - Collector (Ic) (Max) 150 A 150 A
Current - Collector Pulsed (Icm) 300 A 225 A
Vce(on) (Max) @ Vge, Ic 2.11V @ 15V, 75A 1.69V @ 15V, 75A
Power - Max 434 W 453 W
Switching Energy 8.8mJ (on), 3.2mJ (off) 2mJ (on), 1.8mJ (off)
Input Type Standard Standard
Gate Charge 137 nC 663.3 nC
Td (on/off) @ 25°C 28.8ns/117ns 52ns/496ns
Test Condition 600V, 75A, 4.7Ohm, 15V 600V, 37.5A, 4.7Ohm, 15V
Reverse Recovery Time (trr) 259 ns 259 ns
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-247-3
Supplier Device Package TO-247-3 TO-247-3

Related Product By Categories

STGP10NC60KD
STGP10NC60KD
STMicroelectronics
IGBT 600V 20A 65W TO220
STGP30H60DFB
STGP30H60DFB
STMicroelectronics
TRENCH GATE FIELD-STOP IGBT, HB
HGTD1N120BNS9A
HGTD1N120BNS9A
onsemi
IGBT 1200V 5.3A 60W TO252AA
STGB10H60DF
STGB10H60DF
STMicroelectronics
IGBT 600V 20A 115W D2PAK
FGB40T65SPD-F085
FGB40T65SPD-F085
onsemi
IGBT FIELD STOP 650V 80A D2PAK
NGTB25N120FL2WG
NGTB25N120FL2WG
onsemi
IGBT FIELD STOP 1200V 50A TO247
FGH40N60SMD-F085
FGH40N60SMD-F085
onsemi
IGBT 600V 80A 349W TO-247-3
NGTB25N120FL3WG
NGTB25N120FL3WG
onsemi
IGBT 1200V 100A TO247
STGW15H120DF2
STGW15H120DF2
STMicroelectronics
IGBT H-SERIES 1200V 15A TO-247
STGW60H65DFB-4
STGW60H65DFB-4
STMicroelectronics
IGBT
FGH40N60SFDTU-F085
FGH40N60SFDTU-F085
Fairchild Semiconductor
INSULATED GATE BIPOLAR TRANSISTO
NGTB40N65IHRTG
NGTB40N65IHRTG
onsemi
IGBT 650V 40A

Related Product By Brand

1SMB5934BT3G
1SMB5934BT3G
onsemi
DIODE ZENER 24V 3W SMB
2N3773G
2N3773G
onsemi
TRANS NPN 140V 16A TO204
NB3U1548CDR2G
NB3U1548CDR2G
onsemi
IC CLK BUFFER 160MHZ 8SOIC
74HC04DR2G
74HC04DR2G
onsemi
IC INVERTER 6CH 1-INP 14SOIC
MC33364D1
MC33364D1
onsemi
IC OFFLINE SWITCH FLYBACK 8SOIC
LB1936V-TLM-E
LB1936V-TLM-E
onsemi
IC MTR DRV BIPLR 2.5-9.5V 16SSOP
NCV7719DQR2G
NCV7719DQR2G
onsemi
IC MOTOR DRVR 3.15V-5.25V 24SSOP
NCP45495XMNTWG
NCP45495XMNTWG
onsemi
L MANGO
REF3033TB-GT3
REF3033TB-GT3
onsemi
IC VREF SERIES 0.2% SOT23-3
LM2575D2T-5R4
LM2575D2T-5R4
onsemi
IC REG BUCK 5V 1A D2PAK-5
NCP715SQ33T2G
NCP715SQ33T2G
onsemi
IC REG LINEAR 3.3V 50MA SC88A
FODM217CR2V
FODM217CR2V
onsemi
OPTOCOUPLER PHOTOTRANS MFP4