FGY75T95SQDT
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onsemi FGY75T95SQDT

Manufacturer No:
FGY75T95SQDT
Manufacturer:
onsemi
Package:
Tube
Description:
IGBT 950V 75A
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FGY75T95SQDT is a high-performance Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. This device is part of the Trench Field Stop IGBT family, known for its high current capability, low saturation voltage, and fast switching characteristics. The FGY75T95SQDT is designed to operate in a wide range of applications requiring high power handling and efficient switching.

Key Specifications

ParameterValueUnit
Maximum Collector Current150A
Maximum Collector Emitter Breakdown Voltage950V
Maximum Collector Emitter Saturation VoltageN/AV
Maximum Gate Emitter Voltage±20V
Maximum Junction Temperature175°C
Maximum Power Dissipation434W
Pulsed Collector Current300A
Reverse Recovery Time259ns
Gate Charge137nC
Package TypeTO-247-3
Operating Temperature Range-55°C to 175°C

Key Features

  • High Current Capability: The FGY75T95SQDT can handle a maximum collector current of 150A and a pulsed collector current of 300A.
  • Low Saturation Voltage: It features a low collector-emitter saturation voltage, typically 1.31V at 75A, enhancing efficiency.
  • Fast Switching: The device is characterized by fast switching times, including turn-on and turn-off delay times and rise and fall times.
  • Positive Temperature Coefficient: This allows for easy parallel operation, making it suitable for high-power applications.
  • Tight Parameter Distribution: Ensures consistent performance across multiple devices.
  • RoHS Compliant: The device is Pb-free and compliant with RoHS regulations.

Applications

The FGY75T95SQDT is suitable for various high-power applications, including:

  • Solar Inverters: Due to its high current handling and fast switching capabilities, it is ideal for solar inverter systems.
  • Industrial Power Supplies: Its high power dissipation and low saturation voltage make it a good fit for industrial power supply systems.
  • Motor Control Systems: The device’s fast switching and high current capability are beneficial in motor control applications.

Q & A

  1. What is the maximum collector current of the FGY75T95SQDT?
    The maximum collector current is 150A.
  2. What is the maximum collector-emitter breakdown voltage?
    The maximum collector-emitter breakdown voltage is 950V.
  3. What is the package type of the FGY75T95SQDT?
    The package type is TO-247-3.
  4. What is the operating temperature range of the device?
    The operating temperature range is from -55°C to 175°C.
  5. Is the FGY75T95SQDT RoHS compliant?
    Yes, the device is Pb-free and RoHS compliant.
  6. What is the typical collector-emitter saturation voltage at 75A?
    The typical collector-emitter saturation voltage at 75A is 1.31V.
  7. What are some common applications of the FGY75T95SQDT?
    Common applications include solar inverters, industrial power supplies, and motor control systems.
  8. What is the reverse recovery time of the device?
    The reverse recovery time is 259ns.
  9. What is the gate charge of the FGY75T95SQDT?
    The gate charge is 137nC.
  10. Is the FGY75T95SQDT suitable for high-power applications?
    Yes, it is designed for high-power applications due to its high current capability and fast switching characteristics.

Product Attributes

IGBT Type:Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):950 V
Current - Collector (Ic) (Max):150 A
Current - Collector Pulsed (Icm):300 A
Vce(on) (Max) @ Vge, Ic:2.11V @ 15V, 75A
Power - Max:434 W
Switching Energy:8.8mJ (on), 3.2mJ (off)
Input Type:Standard
Gate Charge:137 nC
Td (on/off) @ 25°C:28.8ns/117ns
Test Condition:600V, 75A, 4.7Ohm, 15V
Reverse Recovery Time (trr):259 ns
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:TO-247-3
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Similar Products

Part Number FGY75T95SQDT FGY75T95LQDT
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
IGBT Type Trench Field Stop Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 950 V 950 V
Current - Collector (Ic) (Max) 150 A 150 A
Current - Collector Pulsed (Icm) 300 A 225 A
Vce(on) (Max) @ Vge, Ic 2.11V @ 15V, 75A 1.69V @ 15V, 75A
Power - Max 434 W 453 W
Switching Energy 8.8mJ (on), 3.2mJ (off) 2mJ (on), 1.8mJ (off)
Input Type Standard Standard
Gate Charge 137 nC 663.3 nC
Td (on/off) @ 25°C 28.8ns/117ns 52ns/496ns
Test Condition 600V, 75A, 4.7Ohm, 15V 600V, 37.5A, 4.7Ohm, 15V
Reverse Recovery Time (trr) 259 ns 259 ns
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-247-3
Supplier Device Package TO-247-3 TO-247-3

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