Overview
The STGB10M65DF2 is a Trench gate field-stop IGBT developed by STMicroelectronics, part of their M series. This device is designed using an advanced proprietary trench gate field-stop structure, offering an optimal balance between inverter system performance and efficiency. It is particularly suited for applications requiring low-loss and short-circuit functionality. The IGBT is packaged in a D²PAK (TO-263) package, which is environmentally compliant and available in various ECOPACK® grades.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-emitter voltage (VCE) | 650 | V |
| Continuous collector current at TC = 25 °C | 20 | A |
| Continuous collector current at TC = 100 °C | 10 | A |
| Pulsed collector current | 40 | A |
| Gate-emitter voltage (VGE) | ±20 | V |
| Total dissipation at TC = 25 °C | 115 | W |
| Operating junction temperature range | -55 to 175 | °C |
| Thermal resistance junction-case (RthJC) for IGBT | 1.3 | °C/W |
| Thermal resistance junction-ambient (RthJA) | 62.5 | °C/W |
| Collector-emitter saturation voltage (VCE(sat)) at IC = 10 A | 1.55 (typ.) | V |
| Short-circuit withstand time | 6 µs (VGE = 15 V, TJstart = 150 °C) | µs |
Key Features
- Advanced proprietary trench gate field-stop structure
- Low-loss operation with VCE(sat) = 1.55 V (typ.) @ IC = 10 A
- Tight parameter distribution for safer paralleling
- Positive VCE(sat) temperature coefficient
- Low thermal resistance
- Soft and very fast recovery antiparallel diode
- Maximum junction temperature: TJ = 175 °C
- Short-circuit withstand time of up to 6 µs
Applications
- Motor control
- Uninterruptible Power Supplies (UPS)
- Power Factor Correction (PFC)
- General purpose inverter applications
Q & A
- What is the collector-emitter voltage rating of the STGB10M65DF2?
The collector-emitter voltage rating is 650 V.
- What is the continuous collector current at 25 °C and 100 °C?
The continuous collector current is 20 A at 25 °C and 10 A at 100 °C.
- What is the maximum junction temperature of the STGB10M65DF2?
The maximum junction temperature is 175 °C.
- What is the thermal resistance junction-case (RthJC) for the IGBT?
The thermal resistance junction-case (RthJC) for the IGBT is 1.3 °C/W.
- What are the typical applications of the STGB10M65DF2?
The typical applications include motor control, UPS, PFC, and general purpose inverter applications.
- What is the short-circuit withstand time of the STGB10M65DF2?
The short-circuit withstand time is up to 6 µs.
- What is the package type of the STGB10M65DF2?
The package type is D²PAK (TO-263).
- What is the collector-emitter saturation voltage (VCE(sat)) at IC = 10 A?
The collector-emitter saturation voltage (VCE(sat)) at IC = 10 A is typically 1.55 V.
- Does the STGB10M65DF2 have a positive VCE(sat) temperature coefficient?
- What is the total dissipation at TC = 25 °C?
The total dissipation at TC = 25 °C is 115 W.
