Overview
The NGTB35N65FL2WG is an Insulated Gate Bipolar Transistor (IGBT) produced by onsemi. This device features a robust and cost-effective Field Stop II Trench construction, making it suitable for high-power applications. The IGBT is designed to provide superior performance and reliability in various industrial and automotive systems.
Key Specifications
| Parameter | Value |
|---|---|
| Tensão - Ruptura coletor emissor (máx.) | 650 V |
| Corrente - Coletor (Ic) (máx.) | 70 A |
| Corrente - Pulsada do coletor (Icm) | 120 A |
| Pacote | 3-Pin TO-247, Through Hole |
Key Features
- Field Stop II Trench construction for enhanced performance and cost-effectiveness.
- High voltage and current ratings: 650 V and 70 A continuous collector current, with a peak collector current of 120 A.
- Robust and reliable design suitable for high-power applications.
- Through-hole mounting in a 3-pin TO-247 package.
Applications
The NGTB35N65FL2WG IGBT is designed for use in various high-power applications, including:
- Industrial power supplies and motor drives.
- Automotive systems such as electric vehicles and hybrid vehicles.
- Renewable energy systems, including solar and wind power inverters.
- Power factor correction (PFC) circuits.
Q & A
- What is the maximum collector-emitter voltage of the NGTB35N65FL2WG IGBT?
The maximum collector-emitter voltage is 650 V. - What is the maximum continuous collector current of the NGTB35N65FL2WG IGBT?
The maximum continuous collector current is 70 A. - What is the peak collector current of the NGTB35N65FL2WG IGBT?
The peak collector current is 120 A. - What type of package does the NGTB35N65FL2WG IGBT come in?
The IGBT comes in a 3-pin TO-247 package with through-hole mounting. - What are some common applications of the NGTB35N65FL2WG IGBT?
Common applications include industrial power supplies, automotive systems, renewable energy systems, and power factor correction circuits. - What is the Field Stop II Trench construction in the NGTB35N65FL2WG IGBT?
The Field Stop II Trench construction is a robust and cost-effective design that enhances the performance and reliability of the IGBT. - Is the NGTB35N65FL2WG IGBT suitable for high-power applications?
Yes, it is designed for high-power applications due to its high voltage and current ratings and robust construction. - Where can I find detailed specifications for the NGTB35N65FL2WG IGBT?
Detailed specifications can be found in the datasheet available on onsemi's official website and other electronic component distributors like Digi-Key and RS Components. - What are the benefits of using the NGTB35N65FL2WG IGBT in automotive systems?
The benefits include high reliability, robust performance, and the ability to handle high power requirements, making it suitable for electric and hybrid vehicles. - Can the NGTB35N65FL2WG IGBT be used in renewable energy systems?
Yes, it can be used in renewable energy systems such as solar and wind power inverters due to its high voltage and current handling capabilities.
