Overview
The NGTB75N65FL2WG is an Insulated Gate Bipolar Transistor (IGBT) produced by onsemi. This device features a robust and cost-effective Field Stop (FS) Trench construction, making it suitable for demanding switching applications. It offers superior performance with low on-state voltage and minimal switching loss. The IGBT is designed to operate efficiently across a wide range of temperatures and is optimized for high-speed switching.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-emitter Voltage | VCES | 650 | V |
| Collector Current @ TC = 25°C | IC | 100 | A |
| Collector Current @ TC = 100°C | IC | 75 | A |
| Diode Forward Current @ TC = 25°C | IF | 100 | A |
| Diode Forward Current @ TC = 100°C | IF | 75 | A |
| Pulsed Collector Current, Tpulse Limited by TJmax | ICM | 200 | A |
| Short-circuit Withstand Time | tSC | 5 μs | |
| Gate-emitter Voltage | VGE | ±20 | V |
| Transient Gate-emitter Voltage (TPULSE = 5 μs, D < 0.10) | VGE | ±30 | V |
| Power Dissipation @ TC = 25°C | PD | 595 | W |
| Power Dissipation @ TC = 100°C | PD | 265 | W |
| Operating Junction Temperature Range | TJ | -55 to +175 | °C |
| Storage Temperature Range | Tstg | -55 to +175 | °C |
| Lead temperature for soldering, 1/8″ from case for 5 seconds | TSLD | 260 | °C |
| Thermal resistance junction-to-case, for IGBT | RJC | 0.28 | °C/W |
| Thermal resistance junction-to-case, for Diode | RJC | 0.62 | °C/W |
| Thermal resistance junction-to-ambient | RJA | 40 | °C/W |
Key Features
- Extremely Efficient Trench with Field Stop Technology
- Maximum Junction Temperature (TJmax) of 175°C
- Soft Fast Reverse Recovery Diode
- Optimized for High Speed Switching
- 5 μs Short-Circuit Capability
- Pb-Free Device
Applications
- Solar Inverters
- Uninterruptible Power Supplies (UPS)
- Welding
Q & A
- What is the maximum collector-emitter voltage of the NGTB75N65FL2WG IGBT?
The maximum collector-emitter voltage (VCES) is 650 V.
- What is the maximum collector current at 25°C and 100°C?
The maximum collector current is 100 A at 25°C and 75 A at 100°C.
- What is the short-circuit withstand time of the IGBT?
The short-circuit withstand time is 5 μs.
- What is the maximum junction temperature of the device?
The maximum junction temperature (TJmax) is 175°C.
- What are the typical applications of the NGTB75N65FL2WG IGBT?
Typical applications include solar inverters, uninterruptible power supplies (UPS), and welding.
- Is the NGTB75N65FL2WG IGBT Pb-free?
- What is the thermal resistance junction-to-case for the IGBT and diode?
The thermal resistance junction-to-case for the IGBT is 0.28 °C/W and for the diode is 0.62 °C/W.
- What is the power dissipation at 25°C and 100°C?
The power dissipation is 595 W at 25°C and 265 W at 100°C.
- What is the lead temperature for soldering?
The lead temperature for soldering, 1/8″ from the case for 5 seconds, is 260°C.
- What are the key features of the NGTB75N65FL2WG IGBT?
The key features include extremely efficient trench with field stop technology, soft fast reverse recovery diode, optimization for high-speed switching, and a 5 μs short-circuit capability.
