STGW30NC60KD
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STMicroelectronics STGW30NC60KD

Manufacturer No:
STGW30NC60KD
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
IGBT 600V 60A 200W TO247
Delivery:
Payment:
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Product Introduction

Overview

The STGW30NC60KD is a high-performance Insulated Gate Bipolar Transistor (IGBT) produced by STMicroelectronics. This device is designed to offer excellent trade-offs between switching performance and low on-state behavior, making it suitable for a variety of high-power applications. The IGBT is co-packaged with an ultra-fast free-wheeling diode, enhancing its overall efficiency and reliability. The STGW30NC60KD is fabricated using the advanced PowerMESH™ process, ensuring robust and efficient operation in demanding environments.

Key Specifications

Parameter Value Unit
Collector-Emitter Voltage (VCE) 600 V
Collector Current (continuous) at TC = 25 °C 60 A
Collector Current (continuous) at TC = 100 °C 28 A
Pulsed Collector Current 125 A
Gate-Emitter Voltage ±20 V
Short Circuit Withstand Time 10 µs µs
Operating Junction Temperature -55 to 150 °C
Total Dissipation at TC = 25 °C 200 W
Thermal Resistance Junction-Case (IGBT) 0.625 °C/W
Thermal Resistance Junction-Case (Diode) 1.5 °C/W
Package Type TO-247-3

Key Features

  • Low On-Voltage Drop (VCE(sat)): Ensures minimal energy loss during operation.
  • Low Cres / Cies Ratio: Reduces susceptibility to cross conduction.
  • Short Circuit Withstand Time: Can withstand short circuits for up to 10 µs.
  • Ultra-Fast Free-Wheeling Diode: Co-packaged for enhanced efficiency and reliability.
  • Advanced PowerMESH™ Process: Provides an excellent balance between switching performance and low on-state behavior.
  • ECOPACK® Packages: Lead-free second level interconnect, compliant with environmental requirements.

Applications

  • High Frequency Inverters: Suitable for high-frequency switching applications.
  • Motor Drivers: Ideal for driving motors in various industrial and automotive applications.

Q & A

  1. What is the maximum collector-emitter voltage of the STGW30NC60KD?

    The maximum collector-emitter voltage is 600 V.

  2. What is the continuous collector current at 25 °C and 100 °C?

    The continuous collector current is 60 A at 25 °C and 28 A at 100 °C.

  3. What is the short circuit withstand time of the STGW30NC60KD?

    The short circuit withstand time is 10 µs.

  4. What is the operating junction temperature range of the STGW30NC60KD?

    The operating junction temperature range is -55 to 150 °C.

  5. What type of package does the STGW30NC60KD come in?

    The STGW30NC60KD comes in a TO-247-3 package.

  6. What is the thermal resistance junction-case for the IGBT and diode?

    The thermal resistance junction-case is 0.625 °C/W for the IGBT and 1.5 °C/W for the diode.

  7. What are the key features of the STGW30NC60KD?

    The key features include low on-voltage drop, low Cres / Cies ratio, short circuit withstand time, ultra-fast free-wheeling diode, and advanced PowerMESH™ process.

  8. What are the typical applications of the STGW30NC60KD?

    The typical applications include high frequency inverters and motor drivers.

  9. Is the STGW30NC60KD RoHS compliant?
  10. What is the total dissipation at TC = 25 °C for the STGW30NC60KD?

    The total dissipation at TC = 25 °C is 200 W.

Product Attributes

IGBT Type:- 
Voltage - Collector Emitter Breakdown (Max):600 V
Current - Collector (Ic) (Max):60 A
Current - Collector Pulsed (Icm):125 A
Vce(on) (Max) @ Vge, Ic:2.7V @ 15V, 20A
Power - Max:200 W
Switching Energy:350µJ (on), 435µJ (off)
Input Type:Standard
Gate Charge:96 nC
Td (on/off) @ 25°C:29ns/120ns
Test Condition:480V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr):40 ns
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:TO-247-3
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Similar Products

Part Number STGW30NC60KD STGW30NC60VD STGW30NC60WD STGW40NC60KD
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active
IGBT Type - - - -
Voltage - Collector Emitter Breakdown (Max) 600 V 600 V 600 V 600 V
Current - Collector (Ic) (Max) 60 A 80 A 60 A 70 A
Current - Collector Pulsed (Icm) 125 A 150 A 150 A 220 A
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 20A 2.5V @ 15V, 20A 2.5V @ 15V, 20A 2.7V @ 15V, 30A
Power - Max 200 W 250 W 200 W 250 W
Switching Energy 350µJ (on), 435µJ (off) 220µJ (on), 330µJ (off) 305µJ (on), 181µJ (off) 595µJ (on), 716µJ (off)
Input Type Standard Standard Standard Standard
Gate Charge 96 nC 100 nC 102 nC 135 nC
Td (on/off) @ 25°C 29ns/120ns 31ns/100ns 29.5ns/118ns 46ns/164ns
Test Condition 480V, 20A, 10Ohm, 15V 390V, 20A, 3.3Ohm, 15V 390V, 20A, 10Ohm, 15V 480V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr) 40 ns 44 ns 40 ns 45 ns
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3
Supplier Device Package TO-247-3 TO-247-3 TO-247-3 TO-247 Long Leads

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