Overview
The NGTB03N60R2DT4G is a high-performance Insulated Gate Bipolar Transistor (IGBT) produced by onsemi. This component is designed for high-power applications requiring efficient switching and robust reliability. The NGTB03N60R2DT4G is packaged in a TO-252-2 (DPAK) package, which is RoHS compliant, ensuring environmental sustainability. This IGBT is suitable for a variety of power management and control systems due to its high collector-emitter voltage and current ratings.
Key Specifications
| Product Attribute | Attribute Value |
|---|---|
| Collector-Emitter Voltage VCEO Max: | 600 V |
| Collector-Emitter Saturation Voltage: | 1.7 V |
| Maximum Gate Emitter Voltage: | -20 V, 20 V |
| Continuous Collector Current at 25°C: | 9 A |
Key Features
- High Collector-Emitter Voltage: Up to 600 V, making it suitable for high-voltage applications.
- High Continuous Collector Current: 9 A at 25°C, ensuring robust performance in power-intensive systems.
- Low Collector-Emitter Saturation Voltage: 1.7 V, which minimizes power losses during operation.
- Wide Gate Emitter Voltage Range: -20 V to 20 V, providing flexibility in control circuit design.
- RoHS Compliant: Packaged in a TO-252-2 (DPAK) package, meeting environmental standards.
Applications
- Power Supplies: Suitable for high-power DC-DC converters and power supply units.
- Motor Control: Used in motor drives and control systems due to its high current and voltage handling capabilities.
- Industrial Automation: Ideal for use in industrial automation systems requiring reliable and efficient power management.
- Renewable Energy Systems: Can be used in solar and wind power systems for efficient energy conversion.
Q & A
- What is the maximum collector-emitter voltage of the NGTB03N60R2DT4G?
The maximum collector-emitter voltage is 600 V.
- What is the collector-emitter saturation voltage of this IGBT?
The collector-emitter saturation voltage is 1.7 V.
- What is the continuous collector current rating at 25°C?
The continuous collector current rating at 25°C is 9 A.
- What is the maximum gate emitter voltage range for this component?
The maximum gate emitter voltage range is -20 V to 20 V.
- Is the NGTB03N60R2DT4G RoHS compliant?
- What type of package does the NGTB03N60R2DT4G come in?
The NGTB03N60R2DT4G comes in a TO-252-2 (DPAK) package.
- What are some common applications for the NGTB03N60R2DT4G?
- Where can I find detailed specifications for the NGTB03N60R2DT4G?
- How does the NGTB03N60R2DT4G handle high-power applications?
- Is the NGTB03N60R2DT4G suitable for use in high-temperature environments?
