Overview
The STGWT80H65DFB is a high-performance Insulated Gate Bipolar Transistor (IGBT) developed by STMicroelectronics. It is part of the new HB series of IGBTs, designed to optimize the balance between conduction and switching losses, thereby maximizing the efficiency of frequency converters. This device features an advanced proprietary trench gate field-stop structure, which enhances its switching speed and reduces losses. The STGWT80H65DFB is available in a TO-3P package and is suitable for high-frequency applications requiring high efficiency and reliability.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (VCES) | 650 | V |
| Continuous Collector Current at TC = 25 °C | 120 | A |
| Continuous Collector Current at TC = 100 °C | 80 | A |
| Pulsed Collector Current (tp ≤ 1 μs, TJ < 175 °C) | 300 | A |
| Gate-Emitter Voltage (VGE) | ±20 | V |
| Collector-Emitter Saturation Voltage (VCE(sat)) at IC = 80 A | 1.6 | V |
| Maximum Junction Temperature (TJ) | 175 | °C |
| Thermal Resistance Junction-Case (RthJC) for IGBT | 0.32 | °C/W |
| Total Power Dissipation at TC = 25 °C | 470 | W |
| Turn-on Delay Time (td(on)) | 84 | ns |
| Turn-off Delay Time (td(off)) | 280 | ns |
| Package | TO-3P |
Key Features
- High Speed Switching: Optimized for high-frequency applications with minimized tail current and low saturation voltage.
- Tight Parameter Distribution: Ensures safer paralleling operation due to the slightly positive VCE(sat) temperature coefficient.
- Low Thermal Resistance: Enhanced thermal performance with a thermal resistance junction-case of 0.32 °C/W for the IGBT.
- Fast Soft Recovery Diode: Integrated antiparallel diode with very fast soft recovery characteristics.
- High Efficiency: Designed to maximize the efficiency of frequency converters by balancing conduction and switching losses.
Applications
- Photovoltaic Inverters: Suitable for solar power conversion systems due to its high efficiency and reliability.
- High Frequency Converters: Ideal for applications requiring fast switching and low losses, such as in power supplies and motor drives.
Q & A
- What is the maximum collector-emitter voltage of the STGWT80H65DFB IGBT?
The maximum collector-emitter voltage (VCES) is 650 V.
- What is the continuous collector current at 25 °C and 100 °C?
The continuous collector current is 120 A at TC = 25 °C and 80 A at TC = 100 °C.
- What is the typical collector-emitter saturation voltage?
The typical collector-emitter saturation voltage (VCE(sat)) is 1.6 V at IC = 80 A.
- What is the maximum junction temperature?
The maximum junction temperature (TJ) is 175 °C.
- What is the thermal resistance junction-case for the IGBT?
The thermal resistance junction-case (RthJC) for the IGBT is 0.32 °C/W.
- What are the typical turn-on and turn-off delay times?
The typical turn-on delay time (td(on)) is 84 ns, and the typical turn-off delay time (td(off)) is 280 ns.
- What package type is the STGWT80H65DFB available in?
The STGWT80H65DFB is available in a TO-3P package.
- What are some of the key applications for this IGBT?
Key applications include photovoltaic inverters and high-frequency converters.
- What is the significance of the tight parameter distribution in this IGBT?
The tight parameter distribution ensures safer paralleling operation due to the slightly positive VCE(sat) temperature coefficient.
- Does the STGWT80H65DFB have an integrated diode?
Yes, it has an integrated antiparallel diode with very fast soft recovery characteristics.
