FGH40N60SMD-F085
  • Share:

onsemi FGH40N60SMD-F085

Manufacturer No:
FGH40N60SMD-F085
Manufacturer:
onsemi
Package:
Tube
Description:
IGBT 600V 80A 349W TO-247-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FGH40N60SMD-F085 is a Field Stop IGBT (Insulated Gate Bipolar Transistor) produced by onsemi. This device utilizes novel Field Stop IGBT technology to offer optimal performance in various high-power applications. It is designed to minimize conduction and switching losses, making it suitable for use in automotive chargers, inverters, and other high-voltage systems.

Key Specifications

Parameter Symbol Typical Value Maximum Value Unit
Collector to Emitter Voltage VCES - 600 V
Gate to Emitter Voltage VGES - ±20 V
Collector Current at TC = 25°C IC - 80 A
Collector Current at TC = 100°C IC - 40 A
Pulsed Collector Current ICM - 120 A
Maximum Power Dissipation at TC = 25°C PD - 349 W
Maximum Power Dissipation at TC = 100°C PD - 174 W
Operating Junction Temperature TJ - -55 to +175 °C
Thermal Resistance, Junction to Case RθJC 0.43 - °C/W
Collector to Emitter Saturation Voltage VCE(sat) 1.9 2.5 V

Key Features

  • Maximum Junction Temperature: TJ = 175°C
  • Positive Temperature Coefficient: For easy parallel operating
  • High Current Capability: Up to 40 A at TC = 100°C
  • Low Saturation Voltage: VCE(sat) = 1.9 V (Typ.) @ IC = 40 A
  • High Input Impedance: For better control and stability
  • Fast Switching: EOFF = 6.5 μJ/A
  • Tightened Parameter Distribution: For consistent performance
  • AEC-Q101 Qualified and PPAP Capable: Meets automotive requirements
  • Pb-Free, Halogen Free/BFR Free, and RoHS Compliant: Environmentally friendly

Applications

  • Automotive Chargers and Converters: High-voltage auxiliaries
  • Inverters: Including solar inverters and UPS systems
  • PFC (Power Factor Correction): For efficient power management
  • Telecom and ESS (Energy Storage Systems): For reliable power supply
  • Welders: High-power welding applications

Q & A

  1. What is the maximum collector to emitter voltage of the FGH40N60SMD-F085?

    The maximum collector to emitter voltage is 600 V.

  2. What is the maximum collector current at TC = 25°C?

    The maximum collector current at TC = 25°C is 80 A.

  3. What is the typical collector to emitter saturation voltage?

    The typical collector to emitter saturation voltage is 1.9 V at IC = 40 A.

  4. Is the FGH40N60SMD-F085 AEC-Q101 qualified?

    Yes, the device is AEC-Q101 qualified and PPAP capable.

  5. What is the maximum operating junction temperature?

    The maximum operating junction temperature is 175°C.

  6. What is the thermal resistance from junction to case?

    The thermal resistance from junction to case is 0.43 °C/W.

  7. Is the device Pb-Free and RoHS compliant?

    Yes, the device is Pb-Free, Halogen Free/BFR Free, and RoHS compliant.

  8. What are some typical applications of the FGH40N60SMD-F085?

    Typical applications include automotive chargers, inverters, PFC, UPS, telecom, ESS, and welders.

  9. What is the maximum power dissipation at TC = 25°C?

    The maximum power dissipation at TC = 25°C is 349 W.

  10. What is the turn-off switching loss at TC = 25°C?

    The turn-off switching loss at TC = 25°C is approximately 0.3 to 0.39 mJ.

Product Attributes

IGBT Type:Field Stop
Voltage - Collector Emitter Breakdown (Max):600 V
Current - Collector (Ic) (Max):80 A
Current - Collector Pulsed (Icm):120 A
Vce(on) (Max) @ Vge, Ic:2.5V @ 15V, 40A
Power - Max:349 W
Switching Energy:920µJ (on), 300µJ (off)
Input Type:Standard
Gate Charge:180 nC
Td (on/off) @ 25°C:18ns/110ns
Test Condition:400V, 40A, 6Ohm, 15V
Reverse Recovery Time (trr):47 ns
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:TO-247-3
0 Remaining View Similar

In Stock

$6.61
100

Please send RFQ , we will respond immediately.

Similar Products

Part Number FGH40N60SMD-F085 FGH60N60SMD-F085 FGH40N60SMDF-F085
Manufacturer onsemi onsemi Fairchild Semiconductor
Product Status Active Obsolete Active
IGBT Type Field Stop Field Stop Field Stop
Voltage - Collector Emitter Breakdown (Max) 600 V 600 V 600 V
Current - Collector (Ic) (Max) 80 A 120 A 80 A
Current - Collector Pulsed (Icm) 120 A 180 A 120 A
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 40A 2.5V @ 15V, 60A 2.5V @ 15V, 40A
Power - Max 349 W 600 W 349 W
Switching Energy 920µJ (on), 300µJ (off) 1.59mJ (on), 390µJ (off) 1.3mJ (on), 260µJ (off)
Input Type Standard Standard Standard
Gate Charge 180 nC 280 nC 122 nC
Td (on/off) @ 25°C 18ns/110ns 22ns/116ns 18ns/110ns
Test Condition 400V, 40A, 6Ohm, 15V 400V, 60A, 3Ohm, 15V 400V, 40A, 6Ohm, 15V
Reverse Recovery Time (trr) 47 ns 42 ns 90 ns
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-247-3 TO-247-3 TO-247-3
Supplier Device Package TO-247-3 TO-247-3 TO-247

Related Product By Categories

STGP30H60DFB
STGP30H60DFB
STMicroelectronics
TRENCH GATE FIELD-STOP IGBT, HB
FGA40N65SMD
FGA40N65SMD
onsemi
IGBT FIELD STOP 650V 80A TO3PN
STGF10NB60SD
STGF10NB60SD
STMicroelectronics
IGBT 600V 23A 25W TO220FP
STGD4M65DF2
STGD4M65DF2
STMicroelectronics
TRENCH GATE FIELD-STOP IGBT, M S
STGF14NC60KD
STGF14NC60KD
STMicroelectronics
IGBT 600V 11A 28W TO220FP
STGB7NC60HDT4
STGB7NC60HDT4
STMicroelectronics
IGBT 600V 25A 80W D2PAK
ISL9V3040D3ST-F085C
ISL9V3040D3ST-F085C
onsemi
ECOSPARK1 IGN-IGBT TO252
STGD7NB60ST4
STGD7NB60ST4
STMicroelectronics
IGBT 600V 15A 55W DPAK
STGD20N40LZ
STGD20N40LZ
STMicroelectronics
IGBT 390V 25A 125W DPAK
FGHL75T65MQD
FGHL75T65MQD
onsemi
IGBT 650V 75A TO247
IKW50N60TA
IKW50N60TA
Infineon Technologies
IKW50N60 - AUTOMOTIVE IGBT DISCR
NGD15N41CLT4G
NGD15N41CLT4G
Littelfuse Inc.
IGBT 440V 15A 107W DPAK

Related Product By Brand

MBRAF440T3G
MBRAF440T3G
onsemi
DIODE SCHOTTKY 40V 4A SMA-FL
1SMA5942BT3G
1SMA5942BT3G
onsemi
DIODE ZENER 51V 1.5W SMA
1N5353BRLG
1N5353BRLG
onsemi
DIODE ZENER 16V 5W AXIAL
NVD5117PLT4G-VF01
NVD5117PLT4G-VF01
onsemi
MOSFET P-CH 60V 11A/61A DPAK
2N7002LT3
2N7002LT3
onsemi
MOSFET N-CH 60V 115MA SOT23-3
2SK4177-DL-1E
2SK4177-DL-1E
onsemi
MOSFET N-CH 1500V 2A TO263-2
FDS4465-G
FDS4465-G
onsemi
MOSFET P-CH 20V 8SOIC
J113-D74Z
J113-D74Z
onsemi
JFET N-CH 35V 625MW TO92
MC33072ADG
MC33072ADG
onsemi
IC OPAMP JFET 2 CIRCUIT 8SOIC
MC74HC00ADG
MC74HC00ADG
onsemi
IC GATE NAND 4CH 2-INP 14SOIC
MC14528BDR2G
MC14528BDR2G
onsemi
IC MULTIVIBRATOR 90NS 16SOIC
MC79L15ABPG
MC79L15ABPG
onsemi
IC REG LINEAR -15V 100MA TO92-3