NGB8202NT4G
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onsemi NGB8202NT4G

Manufacturer No:
NGB8202NT4G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
IGBT 440V 20A 150W D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NGB8202NT4G is a high-performance Insulated Gate Bipolar Transistor (IGBT) produced by onsemi. This device is designed for high-power applications requiring efficient switching and robust reliability. The NGB8202NT4G features a collector-emitter voltage rating of 440V and a maximum collector current of 20A, making it suitable for a wide range of industrial and automotive applications.

Key Specifications

ParameterValue
IGBT TypeN-Channel
Voltage - Collector Emitter Breakdown (Max)440V
Vce(on) (Max) @ Vge Ic1.9V @ 4.5V 20A
Current - Collector (Ic) (Max)20A
Current - Collector Pulsed (Icm)50A
Power - Max150W
Operating & Storage Temperature Range-55 to +175°C
Mounting TypeSurface Mount
Supplier Device PackageD2PAK

Key Features

  • High collector-emitter voltage rating of 440V and maximum collector current of 20A.
  • Low Vce(on) of 1.9V at 4.5V gate voltage and 20A collector current.
  • High pulsed collector current capability of 50A.
  • Maximum power dissipation of 150W.
  • Wide operating and storage temperature range from -55°C to +175°C.
  • Surface mount D2PAK package for easy integration into various applications.

Applications

The NGB8202NT4G IGBT is versatile and can be used in a variety of high-power applications, including:

  • Industrial power supplies and motor drives.
  • Automotive systems such as electric vehicle charging and traction control.
  • Renewable energy systems, including solar and wind power inverters.
  • High-frequency switching applications requiring low losses and high reliability.

Q & A

  1. What is the maximum collector-emitter voltage of the NGB8202NT4G?
    The maximum collector-emitter voltage is 440V.
  2. What is the maximum collector current of the NGB8202NT4G?
    The maximum collector current is 20A.
  3. What is the Vce(on) at 4.5V gate voltage and 20A collector current?
    The Vce(on) is 1.9V at 4.5V gate voltage and 20A collector current.
  4. What is the maximum pulsed collector current of the NGB8202NT4G?
    The maximum pulsed collector current is 50A.
  5. What is the maximum power dissipation of the NGB8202NT4G?
    The maximum power dissipation is 150W.
  6. What is the operating and storage temperature range of the NGB8202NT4G?
    The operating and storage temperature range is from -55°C to +175°C.
  7. What type of package does the NGB8202NT4G come in?
    The NGB8202NT4G comes in a D2PAK surface mount package.
  8. What are some common applications for the NGB8202NT4G?
    Common applications include industrial power supplies, automotive systems, renewable energy systems, and high-frequency switching applications.
  9. Is the NGB8202NT4G suitable for high-power switching applications?
    Yes, the NGB8202NT4G is designed for high-power switching applications due to its high voltage and current ratings and low switching losses.
  10. Where can I find detailed specifications and datasheets for the NGB8202NT4G?
    Detailed specifications and datasheets can be found on the official onsemi website, as well as through distributors like Digi-Key, Mouser, and others.

Product Attributes

IGBT Type:- 
Voltage - Collector Emitter Breakdown (Max):440 V
Current - Collector (Ic) (Max):20 A
Current - Collector Pulsed (Icm):50 A
Vce(on) (Max) @ Vge, Ic:1.9V @ 4.5V, 20A
Power - Max:150 W
Switching Energy:- 
Input Type:Logic
Gate Charge:- 
Td (on/off) @ 25°C:-/5µs
Test Condition:300V, 9A, 1kOhm, 5V
Reverse Recovery Time (trr):- 
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:D²PAK
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Same Series
NGB8202NT4G
NGB8202NT4G
IGBT 440V 20A 150W D2PAK

Similar Products

Part Number NGB8202NT4G NGB8204NT4G NGB8206NT4G NGB8207NT4G NGB8202ANT4G NGB8202NT4
Manufacturer onsemi onsemi Littelfuse Inc. onsemi Littelfuse Inc. onsemi
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
IGBT Type - - - - - -
Voltage - Collector Emitter Breakdown (Max) 440 V 430 V 390 V 365 V 440 V 440 V
Current - Collector (Ic) (Max) 20 A 18 A 20 A 20 A 20 A 20 A
Current - Collector Pulsed (Icm) 50 A 50 A - 50 A 50 A 50 A
Vce(on) (Max) @ Vge, Ic 1.9V @ 4.5V, 20A 2.5V @ 4V, 15A 1.9V @ 4.5V, 20A 2.6V @ 4V, 20A 1.9V @ 4.5V, 20A 1.9V @ 4.5V, 20A
Power - Max 150 W 115 W 150 W 165 W 150 W 150 W
Switching Energy - - - - - -
Input Type Logic Logic Logic Logic Logic Logic
Gate Charge - - - - - -
Td (on/off) @ 25°C -/5µs - - - -/5µs -/5µs
Test Condition 300V, 9A, 1kOhm, 5V - - - 300V, 9A, 1kOhm, 5V 300V, 9A, 1kOhm, 5V
Reverse Recovery Time (trr) - - - - - -
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) - -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D²PAK D²PAK D2PAK D²PAK D2PAK D²PAK

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