Overview
The STGP20H60DF is a high-speed trench gate field-stop IGBT (Insulated Gate Bipolar Transistor) developed by STMicroelectronics. This device is designed to offer an optimal balance between conduction and switching losses, making it highly efficient for very high frequency converters. The STGP20H60DF features a positive VCE(sat) temperature coefficient and tight parameter distribution, which facilitates easier paralleling operations. It is available in the TO-220 package, making it suitable for a variety of power management applications.
Key Specifications
| Parameter | Unit | Min. | Typ. | Max. |
|---|---|---|---|---|
| Collector-emitter voltage (VCE) | V | - | - | 600 |
| Continuous collector current at TC = 25 °C | A | - | - | 20 |
| Pulsed collector current | A | - | - | 80 |
| Gate-emitter voltage (VGE) | V | - | - | ±20 |
| Collector-emitter saturation voltage (VCE(sat)) at IC = 20 A, VGE = 15 V | V | 1.6 | 2.0 | - |
| Thermal resistance junction-case (RthJC) for IGBT | °C/W | - | - | 0.9 |
| Operating junction temperature (TJ) | °C | -55 | - | 175 |
| Storage temperature range (TSTG) | °C | -55 | - | 150 |
Key Features
- High Speed Switching: Optimized for high-frequency applications.
- Tight Parameters Distribution: Facilitates safe and easy paralleling operations.
- Low Thermal Resistance: Enhances heat dissipation and reliability.
- Short-Circuit Rated: Capable of withstanding short-circuit conditions.
- Ultrafast Soft Recovery Antiparallel Diode: Reduces switching losses and improves overall efficiency.
- Positive VCE(sat) Temperature Coefficient: Simplifies paralleling and improves thermal stability.
Applications
- Motor Control: Suitable for high-power motor drive systems.
- UPS (Uninterruptible Power Supplies) and PFC (Power Factor Correction): Ideal for high-efficiency power conversion applications.
Q & A
- What is the maximum collector-emitter voltage of the STGP20H60DF?
The maximum collector-emitter voltage (VCE) is 600 V.
- What is the continuous collector current at 25 °C for the STGP20H60DF?
The continuous collector current at 25 °C is 20 A.
- What is the thermal resistance junction-case (RthJC) for the STGP20H60DF?
The thermal resistance junction-case (RthJC) is 0.9 °C/W.
- What are the key features of the STGP20H60DF?
The key features include high speed switching, tight parameters distribution, low thermal resistance, short-circuit rating, and an ultrafast soft recovery antiparallel diode.
- What are the typical applications of the STGP20H60DF?
The typical applications include motor control, UPS, and PFC.
- What is the operating junction temperature range for the STGP20H60DF?
The operating junction temperature range is from -55 °C to 175 °C.
- What is the storage temperature range for the STGP20H60DF?
The storage temperature range is from -55 °C to 150 °C.
- What is the collector-emitter saturation voltage (VCE(sat)) at IC = 20 A and VGE = 15 V?
The collector-emitter saturation voltage (VCE(sat)) is typically 2.0 V.
- What is the gate-emitter voltage (VGE) range for the STGP20H60DF?
The gate-emitter voltage (VGE) range is ±20 V.
- What package types are available for the STGP20H60DF?
The STGP20H60DF is available in the TO-220 package.
