STP24N60M2
  • Share:

STMicroelectronics STP24N60M2

Manufacturer No:
STP24N60M2
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 18A TO220
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STP24N60M2 is a high-performance N-channel Power MOSFET developed by STMicroelectronics. It is part of the MDmesh II Plus™ family, known for its low on-resistance and gate charge. This MOSFET is designed for high-efficiency switching applications, making it suitable for demanding converter designs. The device is available in a TO-220 package, which is a through-hole mounting type, and is ESD protected to enhance reliability.

Key Specifications

Parameter Value Unit
Type of transistor N-MOSFET
Technology MDmesh II Plus™
Drain-source voltage (VDS) 600 V V
Drain current (ID) at TC = 25 °C 18 A A
Drain current (ID) at TC = 100 °C 12 A A
Power dissipation (PTOT) at TC = 25 °C 150 W W
Gate-source voltage (VGS) ±25 V V
On-state resistance (RDS(on)) 0.19 Ω Ω
Package TO-220-3
Mounting Through Hole (THT)
Total gate charge (Qg) 29 nC nC
Thermal resistance junction-case (Rthj-case) 0.83 °C/W °C/W

Key Features

  • Extremely low gate charge (Qg) and low on-resistance (RDS(on))
  • Lower RDS(on) x area compared to previous generations
  • Low gate input resistance
  • 100% avalanche tested
  • Zener-protected gate for enhanced reliability
  • ESD protected gate

Applications

The STP24N60M2 is particularly suited for high-efficiency switching applications, including:

  • High-frequency converters
  • Switch-mode power supplies
  • Motor control and drive systems
  • Power factor correction (PFC) circuits
  • Other high-power switching applications requiring low on-resistance and high efficiency

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STP24N60M2?

    The maximum drain-source voltage (VDS) is 600 V.

  2. What is the continuous drain current (ID) at 25 °C and 100 °C?

    The continuous drain current (ID) is 18 A at 25 °C and 12 A at 100 °C.

  3. What is the power dissipation (PTOT) at 25 °C?

    The power dissipation (PTOT) at 25 °C is 150 W.

  4. What is the on-state resistance (RDS(on)) of the STP24N60M2?

    The on-state resistance (RDS(on)) is 0.19 Ω.

  5. What package type is the STP24N60M2 available in?

    The STP24N60M2 is available in a TO-220-3 package.

  6. What is the mounting method for the STP24N60M2?

    The mounting method is Through Hole (THT).

  7. Is the STP24N60M2 ESD protected?
  8. What are some typical applications for the STP24N60M2?

    Typical applications include high-frequency converters, switch-mode power supplies, motor control and drive systems, and power factor correction (PFC) circuits.

  9. What is the thermal resistance junction-case (Rthj-case) of the STP24N60M2?

    The thermal resistance junction-case (Rthj-case) is 0.83 °C/W.

  10. Is the STP24N60M2 100% avalanche tested?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:18A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:190mOhm @ 9A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:29 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1060 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):150W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$3.30
212

Please send RFQ , we will respond immediately.

Same Series
STP24N60M2
STP24N60M2
MOSFET N-CH 600V 18A TO220
STI24N60M2
STI24N60M2
MOSFET N-CH 600V 18A I2PAK
STW24N60M2
STW24N60M2
MOSFET N-CH 600V 18A TO247

Similar Products

Part Number STP24N60M2 STP24N60M6 STP28N60M2 STP26N60M2 STP24N65M2 STP24N60DM2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V 650 V 600 V
Current - Continuous Drain (Id) @ 25°C 18A (Tc) 17A (Tj) 24A (Tc) 20A (Tc) 16A (Tc) 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V - 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 190mOhm @ 9A, 10V - 150mOhm @ 12A, 10V - 230mOhm @ 8A, 10V 200mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA - 4V @ 250µA - 4V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V - 37 nC @ 10 V - 29 nC @ 10 V 29 nC @ 10 V
Vgs (Max) ±25V - ±25V - ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 1060 pF @ 100 V - 1370 pF @ 100 V - 1060 pF @ 100 V 1055 pF @ 100 V
FET Feature - - - - - -
Power Dissipation (Max) 150W (Tc) - 170W (Tc) 169W (Tc) 150W (Tc) 150W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220 TO-220 TO-220 TO-220 TO-220
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

Related Product By Categories

STP80NF70
STP80NF70
STMicroelectronics
MOSFET N-CH 68V 98A TO220AB
2N7002 TR PBFREE
2N7002 TR PBFREE
Central Semiconductor Corp
MOSFET N-CH 60V 115MA SOT23
STL38N65M5
STL38N65M5
STMicroelectronics
MOSFET N-CH 650V PWRFLAT HV
STP3NK90Z
STP3NK90Z
STMicroelectronics
MOSFET N-CH 900V 3A TO220AB
STD7ANM60N
STD7ANM60N
STMicroelectronics
MOSFET N-CH 600V 5A DPAK
STF13N65M2
STF13N65M2
STMicroelectronics
MOSFET N-CH 650V 10A TO220FP
STP4NK80ZFP
STP4NK80ZFP
STMicroelectronics
MOSFET N-CH 800V 3A TO220FP
PMCXB900UE147
PMCXB900UE147
NXP USA Inc.
SMALL SIGNAL FET
NVMFS6H852NLT1G
NVMFS6H852NLT1G
onsemi
MOSFET N-CH 80V 11A/42A 5DFN
STF9N60M2
STF9N60M2
STMicroelectronics
MOSFET N-CH 600V 5.5A TO220FP
BUK762R6-60E,118
BUK762R6-60E,118
Nexperia USA Inc.
MOSFET N-CH 60V 120A D2PAK
FDC658APG
FDC658APG
onsemi
MOSFET P-CH 30V 4A SSOT6

Related Product By Brand

STPS40M80CT
STPS40M80CT
STMicroelectronics
DIODE ARRAY SCHOTTKY 80V TO220AB
STTH60AC06CW
STTH60AC06CW
STMicroelectronics
DIODE ARRAY GP 600V 30A TO247
BD140-16
BD140-16
STMicroelectronics
TRANS PNP 80V 1.5A SOT32
STP80NF03L-04
STP80NF03L-04
STMicroelectronics
MOSFET N-CH 30V 80A TO220AB
STL6P3LLH6
STL6P3LLH6
STMicroelectronics
MOSFET P-CH 30V 6A POWERFLAT
STH15NB50FI
STH15NB50FI
STMicroelectronics
MOSFET N-CH 500V 10.5A ISOWAT218
STM32F078VBH6
STM32F078VBH6
STMicroelectronics
IC MCU 32BIT 128KB FLSH 100UFBGA
E-L9637D
E-L9637D
STMicroelectronics
IC TRANSCEIVER 1/1 8SO
TSZ124IYPT
TSZ124IYPT
STMicroelectronics
IC OPAMP ZER-DRIFT 4CIRC 14TSSOP
LM2904WHYDT
LM2904WHYDT
STMicroelectronics
IC OPAMP GP 2 CIRCUIT 8SOIC
VB325SP13TR
VB325SP13TR
STMicroelectronics
IC PWR DRVR BIPOLAR 1:1 PWRSO10
L7915CP
L7915CP
STMicroelectronics
IC REG LINEAR -15V 1.5A TO220FP