STP24N60M2
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STMicroelectronics STP24N60M2

Manufacturer No:
STP24N60M2
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 18A TO220
Delivery:
Payment:
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Product Introduction

Overview

The STP24N60M2 is a high-performance N-channel Power MOSFET developed by STMicroelectronics. It is part of the MDmesh II Plus™ family, known for its low on-resistance and gate charge. This MOSFET is designed for high-efficiency switching applications, making it suitable for demanding converter designs. The device is available in a TO-220 package, which is a through-hole mounting type, and is ESD protected to enhance reliability.

Key Specifications

Parameter Value Unit
Type of transistor N-MOSFET
Technology MDmesh II Plus™
Drain-source voltage (VDS) 600 V V
Drain current (ID) at TC = 25 °C 18 A A
Drain current (ID) at TC = 100 °C 12 A A
Power dissipation (PTOT) at TC = 25 °C 150 W W
Gate-source voltage (VGS) ±25 V V
On-state resistance (RDS(on)) 0.19 Ω Ω
Package TO-220-3
Mounting Through Hole (THT)
Total gate charge (Qg) 29 nC nC
Thermal resistance junction-case (Rthj-case) 0.83 °C/W °C/W

Key Features

  • Extremely low gate charge (Qg) and low on-resistance (RDS(on))
  • Lower RDS(on) x area compared to previous generations
  • Low gate input resistance
  • 100% avalanche tested
  • Zener-protected gate for enhanced reliability
  • ESD protected gate

Applications

The STP24N60M2 is particularly suited for high-efficiency switching applications, including:

  • High-frequency converters
  • Switch-mode power supplies
  • Motor control and drive systems
  • Power factor correction (PFC) circuits
  • Other high-power switching applications requiring low on-resistance and high efficiency

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STP24N60M2?

    The maximum drain-source voltage (VDS) is 600 V.

  2. What is the continuous drain current (ID) at 25 °C and 100 °C?

    The continuous drain current (ID) is 18 A at 25 °C and 12 A at 100 °C.

  3. What is the power dissipation (PTOT) at 25 °C?

    The power dissipation (PTOT) at 25 °C is 150 W.

  4. What is the on-state resistance (RDS(on)) of the STP24N60M2?

    The on-state resistance (RDS(on)) is 0.19 Ω.

  5. What package type is the STP24N60M2 available in?

    The STP24N60M2 is available in a TO-220-3 package.

  6. What is the mounting method for the STP24N60M2?

    The mounting method is Through Hole (THT).

  7. Is the STP24N60M2 ESD protected?
  8. What are some typical applications for the STP24N60M2?

    Typical applications include high-frequency converters, switch-mode power supplies, motor control and drive systems, and power factor correction (PFC) circuits.

  9. What is the thermal resistance junction-case (Rthj-case) of the STP24N60M2?

    The thermal resistance junction-case (Rthj-case) is 0.83 °C/W.

  10. Is the STP24N60M2 100% avalanche tested?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:18A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:190mOhm @ 9A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:29 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1060 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):150W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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STW24N60M2
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Similar Products

Part Number STP24N60M2 STP24N60M6 STP28N60M2 STP26N60M2 STP24N65M2 STP24N60DM2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V 650 V 600 V
Current - Continuous Drain (Id) @ 25°C 18A (Tc) 17A (Tj) 24A (Tc) 20A (Tc) 16A (Tc) 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V - 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 190mOhm @ 9A, 10V - 150mOhm @ 12A, 10V - 230mOhm @ 8A, 10V 200mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA - 4V @ 250µA - 4V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V - 37 nC @ 10 V - 29 nC @ 10 V 29 nC @ 10 V
Vgs (Max) ±25V - ±25V - ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 1060 pF @ 100 V - 1370 pF @ 100 V - 1060 pF @ 100 V 1055 pF @ 100 V
FET Feature - - - - - -
Power Dissipation (Max) 150W (Tc) - 170W (Tc) 169W (Tc) 150W (Tc) 150W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220 TO-220 TO-220 TO-220 TO-220
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

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