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FQD2N60CTM
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Fairchild Semiconductor FQD2N60CTM

Manufacturer No:
FQD2N60CTM
Manufacturer:
Fairchild Semiconductor
Package:
Bulk
Description:
POWER FIELD-EFFECT TRANSISTOR, 1
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FQD2N60CTM is a high-performance N-channel power MOSFET produced by Fairchild Semiconductor, now part of onsemi. This device is optimized for high-voltage applications and features advanced MOSFET technology. It is particularly suited for primary side switching in DC-DC converters and motor driver applications due to its high breakdown voltage and low on-resistance.

Key Specifications

Parameter Value Unit
Drain-Source Breakdown Voltage (VDSS) 600 V
Continuous Drain Current (ID) 1.9 A
On Resistance (RDS(ON)) 3.6 Ω
Gate Threshold Voltage (VGS(TH)) 2-4 V
Rise and Fall Times 60ns, 66ns
Package Types IPAK, DPAK

Key Features

  • N-channel power MOSFET with high breakdown voltage optimized for primary side switching in DC-DC converters.
  • Low on-resistance, making it efficient for high-voltage applications.
  • Fast switching times with rise and fall times of 60ns and 66ns, respectively.
  • Gate threshold voltage between 2V to 4V, ensuring reliable switching.
  • Available in IPAK and DPAK packages, offering flexibility in design.

Applications

  • High-efficiency switched-mode power supplies.
  • Active power factor correction.
  • Electronic lamp ballasts based on half-bridge topology.
  • High-voltage motor drivers.

Q & A

  1. What is the drain-source breakdown voltage of the FQD2N60CTM?

    The drain-source breakdown voltage (VDSS) is 600V.

  2. What is the continuous drain current rating of the FQD2N60CTM?

    The continuous drain current (ID) is 1.9A.

  3. What is the typical on-resistance of the FQD2N60CTM?

    The typical on-resistance (RDS(ON)) is 3.6Ω.

  4. What are the gate threshold voltage ranges for the FQD2N60CTM?

    The gate threshold voltage (VGS(TH)) ranges from 2V to 4V.

  5. What are the rise and fall times of the FQD2N60CTM?

    The rise and fall times are 60ns and 66ns, respectively.

  6. In which packages is the FQD2N60CTM available?

    The FQD2N60CTM is available in IPAK and DPAK packages.

  7. What are some common applications of the FQD2N60CTM?

    Common applications include high-efficiency switched-mode power supplies, active power factor correction, electronic lamp ballasts, and high-voltage motor drivers.

  8. Why is the FQD2N60CTM preferred for high-voltage applications?

    The FQD2N60CTM is preferred for its high breakdown voltage and low on-resistance, making it efficient for high-voltage applications where current is not the primary concern.

  9. How should the gate of the FQD2N60CTM be driven?

    The gate should be driven carefully, possibly using an optocoupler, and a TVS diode can be added to prevent overvoltage.

  10. What are some alternatives to the FQD2N60CTM?

    Alternatives include the STP5NK60Z, FCA20N60, and NDF10N60ZG.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:1.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.7Ohm @ 950mA, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:12 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:235 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 44W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252, (D-Pak)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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FQD2N60CTM-WS
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FQD2N60CTF_F080
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Similar Products

Part Number FQD2N60CTM FQD6N60CTM FQD5N60CTM FQD3N60CTM FQD2N60TM FQD1N60CTM FQD2N60CTF
Manufacturer Fairchild Semiconductor Fairchild Semiconductor onsemi Fairchild Semiconductor onsemi onsemi Fairchild Semiconductor
Product Status Active Obsolete Active Active Obsolete Last Time Buy Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 1.9A (Tc) 4A (Tc) 2.8A (Tc) 2.4A (Tc) 2A (Tc) 1A (Tc) 1.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 4.7Ohm @ 950mA, 10V 2Ohm @ 2A, 10V 2.5Ohm @ 1.4A, 10V 3.4Ohm @ 1.2A, 10V 4.7Ohm @ 1A, 10V 11.5Ohm @ 500mA, 10V 4.7Ohm @ 950mA, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 5V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V 20 nC @ 10 V 19 nC @ 10 V 14 nC @ 10 V 11 nC @ 10 V 6.2 nC @ 10 V 12 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 235 pF @ 25 V 810 pF @ 25 V 670 pF @ 25 V 565 pF @ 25 V 350 pF @ 25 V 170 pF @ 25 V 235 pF @ 25 V
FET Feature - - - - - - -
Power Dissipation (Max) 2.5W (Ta), 44W (Tc) 80W (Tc) 2.5W (Ta), 49W (Tc) 50W (Tc) 2.5W (Ta), 45W (Tc) 2.5W (Ta), 28W (Tc) 2.5W (Ta), 44W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package TO-252, (D-Pak) TO-252, (D-Pak) TO-252AA TO-252, (D-Pak) TO-252AA TO-252AA TO-252, (D-Pak)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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