Overview
The BD438S is a PNP epitaxial silicon transistor manufactured by Fairchild Semiconductor, now part of ON Semiconductor. This transistor is designed for medium power linear and switching applications. It is housed in a TO-126 package, making it suitable for a variety of electronic circuits that require reliable and efficient power handling.
Key Specifications
| Parameter | Value | Units |
|---|---|---|
| Collector-Base Voltage (VCBO) | 45 | V |
| Collector-Emitter Voltage (VCES) | 45 | V |
| Collector-Emitter Voltage (VCEO) | 45 | V |
| Emitter-Base Voltage (VEBO) | 5 | V |
| Collector Current (DC) (IC) | 4 | A |
| Collector Current (Pulse) (ICP) | 7 | A |
| Base Current (IB) | 1 | A |
| Collector Dissipation (PC) | 36 | W |
| Junction Temperature (TJ) | 150 | °C |
| Storage Temperature (TSTG) | -65 to 150 | °C |
| DC Current Gain (hFE) | 40 to 140 | |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 0.2 to 0.6 | V |
| Base-Emitter ON Voltage (VBE(on)) | 1.1 to 1.2 | V |
| Current Gain Bandwidth Product (fT) | 3 MHz |
Key Features
- Medium Power Handling: The BD438S is capable of handling collector currents up to 4A and collector-emitter voltages up to 45V, making it suitable for medium power applications.
- High Current Gain: The transistor has a DC current gain (hFE) ranging from 40 to 140, ensuring reliable amplification and switching performance.
- Low Saturation Voltage: The collector-emitter saturation voltage (VCE(sat)) is between 0.2 to 0.6V, which is beneficial for reducing power losses in switching applications.
- High Junction Temperature: The transistor can operate at junction temperatures up to 150°C, enhancing its reliability in various environmental conditions.
- Complementary Transistors: The BD438S is part of a family of transistors that include the BD433, BD435, and BD437, allowing for easy selection of complementary devices for different circuit designs.
Applications
- Linear Amplifiers: The BD438S can be used in linear amplifier circuits where medium power handling and high current gain are required.
- Switching Circuits: Its low saturation voltage and high current handling capabilities make it suitable for switching applications such as power supplies, motor control, and relay drivers.
- Audio Amplifiers: The transistor is also used in audio amplifier stages due to its ability to handle medium power levels and provide good amplification characteristics.
- General Purpose Circuits: It can be used in various general-purpose electronic circuits that require a reliable PNP transistor with medium power handling capabilities.
Q & A
- What is the maximum collector-emitter voltage of the BD438S transistor?
The maximum collector-emitter voltage (VCEO) of the BD438S transistor is 45V.
- What is the maximum collector current of the BD438S transistor?
The maximum collector current (IC) of the BD438S transistor is 4A for continuous operation and 7A for pulse operation.
- What is the typical DC current gain (hFE) of the BD438S transistor?
The typical DC current gain (hFE) of the BD438S transistor ranges from 40 to 140.
- What is the maximum junction temperature of the BD438S transistor?
The maximum junction temperature (TJ) of the BD438S transistor is 150°C.
- What package type is the BD438S transistor available in?
The BD438S transistor is available in a TO-126 package.
- Is the BD438S transistor suitable for life support systems or medical devices?
No, the BD438S transistor is not designed or authorized for use in life support systems or medical devices.
- What are some common applications of the BD438S transistor?
The BD438S transistor is commonly used in linear amplifiers, switching circuits, audio amplifiers, and general-purpose electronic circuits.
- What is the collector-emitter saturation voltage (VCE(sat)) of the BD438S transistor?
The collector-emitter saturation voltage (VCE(sat)) of the BD438S transistor is between 0.2 to 0.6V.
- What is the base-emitter ON voltage (VBE(on)) of the BD438S transistor?
The base-emitter ON voltage (VBE(on)) of the BD438S transistor is between 1.1 to 1.2V.
- What is the current gain bandwidth product (fT) of the BD438S transistor?
The current gain bandwidth product (fT) of the BD438S transistor is 3 MHz.
