MJE182STU
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Fairchild Semiconductor MJE182STU

Manufacturer No:
MJE182STU
Manufacturer:
Fairchild Semiconductor
Package:
Bulk
Description:
TRANS NPN 80V 3A TO126-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MJE182STU is a bipolar junction transistor (BJT) produced by Fairchild Semiconductor, now part of ON Semiconductor. This NPN transistor is designed for low power audio amplifier and high-speed switching applications. It is packaged in a TO-126-3 through-hole configuration, making it suitable for a variety of electronic circuits. Although the device is currently discontinued and not recommended for new designs, it remains relevant for existing projects and maintenance purposes.

Key Specifications

Parameter Value Units
Collector-Base Voltage (VCBO) 80 V
Collector-Emitter Voltage (VCEO) 80 V
Emitter-Base Voltage (VEBO) 7 V
Collector Current (DC) (IC) 3 A
Collector Current (Pulse) (ICP) 6 A
Base Current (IB) 1 A
Collector Dissipation (PC) at Ta=25°C 1.5 W
Junction Temperature (TJ) 150 °C
Storage Temperature (TSTG) -65 to 150 °C
Current Gain Bandwidth Product (fT) 50 MHz
Output Capacitance (Cob) 30 pF

Key Features

  • High Voltage and Current Handling: The MJE182STU can handle up to 80V collector-emitter voltage and 3A collector current, making it suitable for a range of power applications.
  • High Speed Operation: With a current gain bandwidth product of 50 MHz, this transistor is ideal for high-speed switching and audio amplifier applications.
  • Low Saturation Voltage: The transistor has a low collector-emitter saturation voltage, which helps in reducing power losses in switching applications.
  • Through-Hole Packaging: The TO-126-3 package is easy to use in through-hole PCB designs, providing a reliable and stable connection.

Applications

  • Low Power Audio Amplifiers: The MJE182STU is well-suited for low power audio amplifier circuits due to its high current gain and low noise characteristics.
  • High Speed Switching: Its high current gain bandwidth product makes it ideal for high-speed switching applications in power supplies, motor control, and other high-frequency circuits.
  • General Purpose Amplification: It can be used in various general-purpose amplification circuits where high voltage and current handling are required.

Q & A

  1. What is the collector-emitter voltage rating of the MJE182STU?

    The collector-emitter voltage rating of the MJE182STU is 80 V.

  2. What is the maximum collector current for the MJE182STU?

    The maximum collector current for the MJE182STU is 3 A.

  3. What is the current gain bandwidth product of the MJE182STU?

    The current gain bandwidth product of the MJE182STU is 50 MHz.

  4. What is the junction temperature range for the MJE182STU?

    The junction temperature range for the MJE182STU is up to 150°C.

  5. What type of packaging does the MJE182STU use?

    The MJE182STU is packaged in a TO-126-3 through-hole configuration.

  6. Is the MJE182STU still recommended for new designs?

    No, the MJE182STU is discontinued and not recommended for new designs. Instead, contact an ON Semiconductor representative for alternative parts.

  7. What are some typical applications for the MJE182STU?

    Typical applications include low power audio amplifiers and high-speed switching circuits.

  8. What is the maximum power dissipation for the MJE182STU at 25°C?

    The maximum power dissipation for the MJE182STU at 25°C is 1.5 W.

  9. What is the emitter-base voltage rating for the MJE182STU?

    The emitter-base voltage rating for the MJE182STU is 7 V.

  10. What is the base-emitter saturation voltage for the MJE182STU?

    The base-emitter saturation voltage for the MJE182STU is approximately 1.5 V to 2.0 V depending on the collector current.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):3 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:1.7V @ 600mA, 3A
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 100mA, 1V
Power - Max:1.5 W
Frequency - Transition:50MHz
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-225AA, TO-126-3
Supplier Device Package:TO-126-3
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Similar Products

Part Number MJE182STU MJE172STU MJE180STU MJE181STU
Manufacturer Fairchild Semiconductor Fairchild Semiconductor onsemi onsemi
Product Status Active Active Active Active
Transistor Type NPN PNP NPN NPN
Current - Collector (Ic) (Max) 3 A 3 A 3 A 3 A
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V 40 V 60 V
Vce Saturation (Max) @ Ib, Ic 1.7V @ 600mA, 3A 1.7V @ 600mA, 3A 1.7V @ 600mA, 3A 1.7V @ 600mA, 3A
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100µA (ICBO) 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 100mA, 1V 50 @ 100mA, 1V 50 @ 100mA, 1V 50 @ 100mA, 1V
Power - Max 1.5 W 1.5 W 1.5 W 1.5 W
Frequency - Transition 50MHz 50MHz 50MHz 50MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3
Supplier Device Package TO-126-3 TO-126-3 TO-126-3 TO-126-3

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