Overview
The MJE182STU is a bipolar junction transistor (BJT) produced by Fairchild Semiconductor, now part of ON Semiconductor. This NPN transistor is designed for low power audio amplifier and high-speed switching applications. It is packaged in a TO-126-3 through-hole configuration, making it suitable for a variety of electronic circuits. Although the device is currently discontinued and not recommended for new designs, it remains relevant for existing projects and maintenance purposes.
Key Specifications
Parameter | Value | Units |
---|---|---|
Collector-Base Voltage (VCBO) | 80 | V |
Collector-Emitter Voltage (VCEO) | 80 | V |
Emitter-Base Voltage (VEBO) | 7 | V |
Collector Current (DC) (IC) | 3 | A |
Collector Current (Pulse) (ICP) | 6 | A |
Base Current (IB) | 1 | A |
Collector Dissipation (PC) at Ta=25°C | 1.5 | W |
Junction Temperature (TJ) | 150 | °C |
Storage Temperature (TSTG) | -65 to 150 | °C |
Current Gain Bandwidth Product (fT) | 50 | MHz |
Output Capacitance (Cob) | 30 | pF |
Key Features
- High Voltage and Current Handling: The MJE182STU can handle up to 80V collector-emitter voltage and 3A collector current, making it suitable for a range of power applications.
- High Speed Operation: With a current gain bandwidth product of 50 MHz, this transistor is ideal for high-speed switching and audio amplifier applications.
- Low Saturation Voltage: The transistor has a low collector-emitter saturation voltage, which helps in reducing power losses in switching applications.
- Through-Hole Packaging: The TO-126-3 package is easy to use in through-hole PCB designs, providing a reliable and stable connection.
Applications
- Low Power Audio Amplifiers: The MJE182STU is well-suited for low power audio amplifier circuits due to its high current gain and low noise characteristics.
- High Speed Switching: Its high current gain bandwidth product makes it ideal for high-speed switching applications in power supplies, motor control, and other high-frequency circuits.
- General Purpose Amplification: It can be used in various general-purpose amplification circuits where high voltage and current handling are required.
Q & A
- What is the collector-emitter voltage rating of the MJE182STU?
The collector-emitter voltage rating of the MJE182STU is 80 V.
- What is the maximum collector current for the MJE182STU?
The maximum collector current for the MJE182STU is 3 A.
- What is the current gain bandwidth product of the MJE182STU?
The current gain bandwidth product of the MJE182STU is 50 MHz.
- What is the junction temperature range for the MJE182STU?
The junction temperature range for the MJE182STU is up to 150°C.
- What type of packaging does the MJE182STU use?
The MJE182STU is packaged in a TO-126-3 through-hole configuration.
- Is the MJE182STU still recommended for new designs?
No, the MJE182STU is discontinued and not recommended for new designs. Instead, contact an ON Semiconductor representative for alternative parts.
- What are some typical applications for the MJE182STU?
Typical applications include low power audio amplifiers and high-speed switching circuits.
- What is the maximum power dissipation for the MJE182STU at 25°C?
The maximum power dissipation for the MJE182STU at 25°C is 1.5 W.
- What is the emitter-base voltage rating for the MJE182STU?
The emitter-base voltage rating for the MJE182STU is 7 V.
- What is the base-emitter saturation voltage for the MJE182STU?
The base-emitter saturation voltage for the MJE182STU is approximately 1.5 V to 2.0 V depending on the collector current.