BC857C/DG/B4235
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NXP USA Inc. BC857C/DG/B4235

Manufacturer No:
BC857C/DG/B4235
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
SMALL SIGNAL BIPOLAR TRANSISTOR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC857C/DG/B4235 is a PNP general-purpose transistor produced by NXP USA Inc., now part of Nexperia. This transistor is housed in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package, making it suitable for a variety of applications where space is limited. It is designed for low current and low voltage operations, making it versatile for general-purpose switching and amplification tasks.

Key Specifications

ParameterValue
PackageSOT23 (TO-236AB)
Channel TypePNP
Maximum Collector Current (IC)100 mA
Maximum Collector-Emitter Voltage (VCEO)65 V
Minimum Current Gain (hFE)420
Maximum Current Gain (hFE)800
Maximum Junction Temperature (TJ)150°C
Minimum Transition Frequency (fT)100 MHz
Total Power Dissipation (Ptot)250 mW

Key Features

  • Low current capability (max. 100 mA)
  • Low voltage operation (max. 65 V)
  • Compact SOT23 package for space-saving designs
  • Suitable for general-purpose switching and amplification
  • High current gain (hFE) range from 420 to 800
  • High transition frequency (fT) of 100 MHz

Applications

The BC857C/DG/B4235 transistor is widely used in various electronic designs across different industries, including:

  • Automotive systems for control and switching applications
  • Industrial automation for general-purpose switching and amplification
  • Consumer electronics for low-power switching and amplification needs
  • Mobile and wearable devices where space and power efficiency are crucial

Q & A

  1. What is the maximum collector current of the BC857C/DG/B4235 transistor?
    The maximum collector current is 100 mA.
  2. What is the maximum collector-emitter voltage of the BC857C/DG/B4235 transistor?
    The maximum collector-emitter voltage is 65 V.
  3. What is the package type of the BC857C/DG/B4235 transistor?
    The transistor is housed in a SOT23 (TO-236AB) package.
  4. What is the minimum current gain (hFE) of the BC857C/DG/B4235 transistor?
    The minimum current gain is 420.
  5. What is the maximum junction temperature of the BC857C/DG/B4235 transistor?
    The maximum junction temperature is 150°C.
  6. What is the transition frequency (fT) of the BC857C/DG/B4235 transistor?
    The minimum transition frequency is 100 MHz.
  7. Is the BC857C/DG/B4235 transistor suitable for high-power applications?
    No, it is designed for low current and low voltage operations.
  8. What are some common applications of the BC857C/DG/B4235 transistor?
    It is used in automotive, industrial, consumer electronics, and mobile/wearable devices.
  9. Can the BC857C/DG/B4235 transistor be used for amplification purposes?
    Yes, it is suitable for general-purpose amplification.
  10. How can I obtain the datasheet for the BC857C/DG/B4235 transistor?
    You can obtain the datasheet from the official Nexperia website or through authorized distributors.

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:- 
Frequency - Transition:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
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