BC846AQB-QZ
  • Share:

Nexperia USA Inc. BC846AQB-QZ

Manufacturer No:
BC846AQB-QZ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
SMALL SIGNAL BIPOLAR IN DFN PACK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC846AQB-QZ is a general-purpose NPN bipolar transistor manufactured by Nexperia USA Inc. This transistor is part of the BC846x-Q series and is known for its high power dissipation capability and compact packaging. It is designed in an ultra-small DFN1110D-3 (SOT8015) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks, making it suitable for applications where space is limited.

This transistor is automotive qualified, meeting the AEC-Q101 standards, and is widely used in various industries including automotive, industrial, and consumer electronics.

Key Specifications

Type number Package version Package name Size (mm) Channel type P tot (mW) V CEO [max] (V) I C [max] (mA) h FE [min] h FE [max] T J [max] (°C) f T [min] (MHz) Automotive qualified
BC846AQB-Q SOT8015 DFN1110D-3 1.1 x 1 x 0.48 NPN 340.0 65.0 100.0 110.0 220.0 150 100.0 Yes

Key Features

  • High Power Dissipation Capability: The BC846AQB-QZ has a high power dissipation capability of 340 mW, making it suitable for a variety of applications.
  • Compact Packaging: The transistor is packaged in an ultra-small DFN1110D-3 (SOT8015) leadless SMD package, which is ideal for space-constrained designs.
  • Automotive Qualified: Meets AEC-Q101 standards, ensuring reliability and performance in automotive applications.
  • High Collector Emitter Voltage: Maximum collector emitter voltage of 65 V.
  • High Current Gain: Minimum DC current gain (hFE) of 110 and maximum of 220.
  • High Operating Temperature: Maximum junction temperature of 150°C.
  • Suitable for AOI: Designed for Automatic Optical Inspection (AOI) of solder joints.

Applications

The BC846AQB-QZ is versatile and can be used in a wide range of applications across various industries, including:

  • Automotive: Suitable for automotive systems due to its AEC-Q101 qualification.
  • Industrial: Used in industrial control systems, power supplies, and other industrial electronics.
  • Consumer Electronics: Found in mobile devices, wearables, and other consumer electronic products.
  • Power and Computing: Used in power management and computing applications where high reliability and performance are required.

Q & A

  1. What is the maximum collector emitter voltage of the BC846AQB-QZ transistor?

    The maximum collector emitter voltage (V CEO) is 65 V.

  2. What is the package type of the BC846AQB-QZ transistor?

    The transistor is packaged in a DFN1110D-3 (SOT8015) leadless SMD package.

  3. What is the maximum DC collector current of the BC846AQB-QZ transistor?

    The maximum DC collector current (I C) is 100 mA.

  4. Is the BC846AQB-QZ transistor automotive qualified?

    Yes, it meets the AEC-Q101 standards.

  5. What is the minimum DC current gain (hFE) of the BC846AQB-QZ transistor?

    The minimum DC current gain (hFE) is 110.

  6. What is the maximum junction temperature of the BC846AQB-QZ transistor?

    The maximum junction temperature (T J) is 150°C.

  7. What is the gain bandwidth product (fT) of the BC846AQB-QZ transistor?

    The minimum gain bandwidth product (fT) is 100 MHz.

  8. Is the BC846AQB-QZ suitable for Automatic Optical Inspection (AOI) of solder joints?

    Yes, it is designed for AOI of solder joints.

  9. What is the power dissipation capability of the BC846AQB-QZ transistor?

    The power dissipation capability (P tot) is 340 mW.

  10. What are the dimensions of the BC846AQB-QZ transistor package?

    The package dimensions are 1.1 x 1 x 0.48 mm.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):65 V
Vce Saturation (Max) @ Ib, Ic:400mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:110 @ 2mA, 5V
Power - Max:340 mW
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount, Wettable Flank
Package / Case:3-XDFN Exposed Pad
Supplier Device Package:DFN1110D-3
0 Remaining View Similar

In Stock

$0.04
2,462

Please send RFQ , we will respond immediately.

Same Series
DD15S20WES/AA
DD15S20WES/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HE0/AA
CBC13W3S10HE0/AA
CONN D-SUB RCPT 13POS CRIMP
CBC9W4S10HV3S/AA
CBC9W4S10HV3S/AA
CONN D-SUB RCPT 9POS CRIMP
DD15S20WE3S/AA
DD15S20WE3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S200V5X
DD26S200V5X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50T20/AA
DD26S2S50T20/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V5X/AA
DD26S2S50V5X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V50
DD26S2S50V50
CONN D-SUB HD RCPT 26P SLDR CUP
CBC47W1S1S50V5S/AA
CBC47W1S1S50V5S/AA
CONN D-SUB RCPT 47POS CRIMP
DD26S20WE2X/AA
DD26S20WE2X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
CBC47W1S1S50V5S
CBC47W1S1S50V5S
CONN D-SUB RCPT 47POS CRIMP
DD26S20L00
DD26S20L00
CONN D-SUB HD RCPT 26P SLDR CUP

Related Product By Categories

BC33725BU
BC33725BU
onsemi
TRANS NPN 45V 0.8A TO92-3
SBC846ALT1G
SBC846ALT1G
onsemi
TRANS NPN 65V 0.1A SOT23-3
BCP5316TA
BCP5316TA
Diodes Incorporated
TRANS PNP 80V 1A SOT223-3
NJD35N04T4G
NJD35N04T4G
onsemi
TRANS NPN DARL 350V 4A DPAK
BCP53-10T115
BCP53-10T115
NXP USA Inc.
TRANS PNP 80V 1A SOT223
BC856AW-7-F
BC856AW-7-F
Diodes Incorporated
TRANS PNP 65V 0.1A SOT323
BC857CQB-QZ
BC857CQB-QZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
BCX5616QTC
BCX5616QTC
Diodes Incorporated
PWR MID PERF TRANSISTOR SOT89 T&
BU806 PBFREE
BU806 PBFREE
Central Semiconductor Corp
TRANS NPN 400V 8A TO220-3
BC857BT,115
BC857BT,115
NXP USA Inc.
TRANS PNP 45V 0.1A SC75
BCX56-10R1
BCX56-10R1
onsemi
TRANS NPN 80V 1A SOT89-3
BCX56-16 TR
BCX56-16 TR
Central Semiconductor Corp
TRANS NPN 80V 1A SOT89

Related Product By Brand

BAS21,235
BAS21,235
Nexperia USA Inc.
DIODE GEN PURP 200V 200MA SOT23
PMEG4030ER-QX
PMEG4030ER-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
BZV55-B12,135
BZV55-B12,135
Nexperia USA Inc.
DIODE ZENER 12V 500MW LLDS
MJD44H11J
MJD44H11J
Nexperia USA Inc.
TRANS NPN 80V 8A DPAK
BCP52-10TF
BCP52-10TF
Nexperia USA Inc.
BCP52-10T/SOT223/SC-73
BC847A/SNVL
BC847A/SNVL
Nexperia USA Inc.
TRANS NPN 45V 0.1A TO236AB
NX3008PBK,215
NX3008PBK,215
Nexperia USA Inc.
MOSFET P-CH 30V 230MA TO236AB
74HC1G66GW-Q100H
74HC1G66GW-Q100H
Nexperia USA Inc.
IC ANLG SWITCH SPST 5TSSOP
74LVC1G126GW-Q100H
74LVC1G126GW-Q100H
Nexperia USA Inc.
IC BUF NON-INVERT 5.5V 5TSSOP
74LVC240ADB,118
74LVC240ADB,118
Nexperia USA Inc.
IC BUFFER INVERT 3.6V 20SSOP
74HC04D-Q100,118
74HC04D-Q100,118
Nexperia USA Inc.
IC INVERTER 6CH 1-INP 14SO
PDZ15BGW,115
PDZ15BGW,115
Nexperia USA Inc.
ZENER DIODE