NSS60200LT1G
  • Share:

onsemi NSS60200LT1G

Manufacturer No:
NSS60200LT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PNP 60V 2A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NSS60200LT1G is a high-performance PNP bipolar junction transistor (BJT) manufactured by onsemi. This transistor is designed for a wide range of applications requiring low voltage and high current handling. It features a compact SOT-23-3 (TO-236) surface mount package, making it suitable for space-constrained designs. The NSS60200LT1G is known for its reliability and efficiency, making it a popular choice in various electronic circuits.

Key Specifications

ParameterValue
Transistor TypePNP Bipolar Junction Transistor (BJT)
Collector-Base Voltage (Vcb)60 V
Collector-Emitter Voltage (Vce)60 V
Emitter-Base Voltage (Veb)5 V
Collector Current (Ic)2 A
Base Current (Ib)200 mA
Power Dissipation (Pd)460 mW
Transition Frequency (ft)100 MHz
Package TypeSOT-23-3 (TO-236)
Operating Temperature Range-55°C to 150°C

Key Features

  • High collector current of up to 2 A
  • High collector-emitter voltage of 60 V
  • Compact SOT-23-3 (TO-236) surface mount package
  • High transition frequency of 100 MHz
  • Low power dissipation of 460 mW
  • Wide operating temperature range from -55°C to 150°C

Applications

The NSS60200LT1G is versatile and can be used in a variety of applications, including:

  • Power amplifiers and switches
  • Audio amplifiers
  • Automotive systems
  • Industrial control circuits
  • Consumer electronics

Q & A

  1. What is the collector current rating of the NSS60200LT1G?
    The collector current rating is up to 2 A.
  2. What is the maximum collector-emitter voltage for the NSS60200LT1G?
    The maximum collector-emitter voltage is 60 V.
  3. What package type does the NSS60200LT1G use?
    The NSS60200LT1G uses the SOT-23-3 (TO-236) surface mount package.
  4. What is the transition frequency of the NSS60200LT1G?
    The transition frequency is 100 MHz.
  5. What is the power dissipation of the NSS60200LT1G?
    The power dissipation is 460 mW.
  6. What is the operating temperature range for the NSS60200LT1G?
    The operating temperature range is from -55°C to 150°C.
  7. Is the NSS60200LT1G suitable for high-frequency applications?
    Yes, with a transition frequency of 100 MHz, it is suitable for high-frequency applications.
  8. Can the NSS60200LT1G be used in automotive systems?
    Yes, it can be used in automotive systems due to its robust specifications and wide operating temperature range.
  9. What are some common applications for the NSS60200LT1G?
    Common applications include power amplifiers, audio amplifiers, industrial control circuits, and consumer electronics.
  10. Where can I find detailed specifications for the NSS60200LT1G?
    Detailed specifications can be found on the datasheets available at Mouser, Digi-Key, and the onsemi official website.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):2 A
Voltage - Collector Emitter Breakdown (Max):60 V
Vce Saturation (Max) @ Ib, Ic:220mV @ 200mA, 2A
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:150 @ 500mA, 2V
Power - Max:460 mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
0 Remaining View Similar

In Stock

$0.44
1,267

Please send RFQ , we will respond immediately.

Same Series
NSS60200LT1G
NSS60200LT1G
TRANS PNP 60V 2A SOT23-3

Similar Products

Part Number NSS60200LT1G NSS60201LT1G NSV60200LT1G NSS20200LT1G NSS40200LT1G
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active
Transistor Type PNP NPN PNP PNP PNP
Current - Collector (Ic) (Max) 2 A 2 A 2 A 2 A 2 A
Voltage - Collector Emitter Breakdown (Max) 60 V 60 V 60 V 20 V 40 V
Vce Saturation (Max) @ Ib, Ic 220mV @ 200mA, 2A 140mV @ 200mA, 2A 220mV @ 200mA, 2A 180mV @ 200mA, 2A 170mV @ 200mA, 2A
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 500mA, 2V 150 @ 1A, 2V 150 @ 500mA, 2V 250 @ 500mA, 2V 220 @ 500mA, 2V
Power - Max 460 mW 460 mW 460 mW 460 mW 460 mW
Frequency - Transition 100MHz 100MHz 100MHz 100MHz 100MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)

Related Product By Categories

PDTA114EU/ZL115
PDTA114EU/ZL115
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
BC847AMB,315
BC847AMB,315
Nexperia USA Inc.
TRANS NPN 45V 0.1A DFN1006B-3
BC817-16W,135
BC817-16W,135
NXP USA Inc.
NOW NEXPERIA BC817-16W - SMALL S
BCP56-16HX
BCP56-16HX
Nexperia USA Inc.
TRANS NPN 80V 1A SOT223
BDX34C
BDX34C
STMicroelectronics
TRANS PNP DARL 100V 10A TO220
BD140G
BD140G
onsemi
TRANS PNP 80V 1.5A TO126
BD680
BD680
STMicroelectronics
TRANS PNP DARL 80V 4A SOT32-3
PMBT4401YS115
PMBT4401YS115
NXP USA Inc.
40 V, 600 MA, DOUBLE NPN SWITCHI
BCX52E6327
BCX52E6327
Infineon Technologies
SMALL SIGNAL BIPOLAR TRANSISTOR
BC856AQBZ
BC856AQBZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
NSVMUN5237T1G
NSVMUN5237T1G
onsemi
NSVMUN5237 - NPN BIPOLAR DIGITAL
BC 846A E6327
BC 846A E6327
Infineon Technologies
TRANS NPN 65V 0.1A SOT-23

Related Product By Brand

MURF860G
MURF860G
onsemi
DIODE GEN PURP 600V 8A TO220FP
2SC3646S-TD-E
2SC3646S-TD-E
onsemi
TRANS NPN 100V 1A PCP
MJD44H11TF
MJD44H11TF
onsemi
TRANS NPN 80V 8A DPAK
2N7002KW
2N7002KW
onsemi
MOSFET N-CH 60V 310MA SC70
FDWS9508L_F085
FDWS9508L_F085
onsemi
MOSFET P-CH 40V 80A 8PQFN
NCS29001DR2G
NCS29001DR2G
onsemi
IC LED DRIVER CTRLR PWM 14SOIC
NCP1623ASNT1G
NCP1623ASNT1G
onsemi
ENHANCED HIGH EFFICIENCY POWER F
NCP335FCT2G
NCP335FCT2G
onsemi
IC PWR SWITCH P-CHAN 1:1 4WLCSP
MC34161DMR2G
MC34161DMR2G
onsemi
IC SUPERVISOR 2 CHANNEL MICRO8
UC3843AD1G
UC3843AD1G
onsemi
UC3843 CURRENT-MODE PWM CONTROLL
NCV4274ADS50R4G
NCV4274ADS50R4G
onsemi
IC REG LINEAR 5V 400MA D2PAK
LM317MBDT
LM317MBDT
onsemi
IC REG LINEAR POS ADJ 500MA DPAK