NSS60200LT1G
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onsemi NSS60200LT1G

Manufacturer No:
NSS60200LT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PNP 60V 2A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NSS60200LT1G is a high-performance PNP bipolar junction transistor (BJT) manufactured by onsemi. This transistor is designed for a wide range of applications requiring low voltage and high current handling. It features a compact SOT-23-3 (TO-236) surface mount package, making it suitable for space-constrained designs. The NSS60200LT1G is known for its reliability and efficiency, making it a popular choice in various electronic circuits.

Key Specifications

ParameterValue
Transistor TypePNP Bipolar Junction Transistor (BJT)
Collector-Base Voltage (Vcb)60 V
Collector-Emitter Voltage (Vce)60 V
Emitter-Base Voltage (Veb)5 V
Collector Current (Ic)2 A
Base Current (Ib)200 mA
Power Dissipation (Pd)460 mW
Transition Frequency (ft)100 MHz
Package TypeSOT-23-3 (TO-236)
Operating Temperature Range-55°C to 150°C

Key Features

  • High collector current of up to 2 A
  • High collector-emitter voltage of 60 V
  • Compact SOT-23-3 (TO-236) surface mount package
  • High transition frequency of 100 MHz
  • Low power dissipation of 460 mW
  • Wide operating temperature range from -55°C to 150°C

Applications

The NSS60200LT1G is versatile and can be used in a variety of applications, including:

  • Power amplifiers and switches
  • Audio amplifiers
  • Automotive systems
  • Industrial control circuits
  • Consumer electronics

Q & A

  1. What is the collector current rating of the NSS60200LT1G?
    The collector current rating is up to 2 A.
  2. What is the maximum collector-emitter voltage for the NSS60200LT1G?
    The maximum collector-emitter voltage is 60 V.
  3. What package type does the NSS60200LT1G use?
    The NSS60200LT1G uses the SOT-23-3 (TO-236) surface mount package.
  4. What is the transition frequency of the NSS60200LT1G?
    The transition frequency is 100 MHz.
  5. What is the power dissipation of the NSS60200LT1G?
    The power dissipation is 460 mW.
  6. What is the operating temperature range for the NSS60200LT1G?
    The operating temperature range is from -55°C to 150°C.
  7. Is the NSS60200LT1G suitable for high-frequency applications?
    Yes, with a transition frequency of 100 MHz, it is suitable for high-frequency applications.
  8. Can the NSS60200LT1G be used in automotive systems?
    Yes, it can be used in automotive systems due to its robust specifications and wide operating temperature range.
  9. What are some common applications for the NSS60200LT1G?
    Common applications include power amplifiers, audio amplifiers, industrial control circuits, and consumer electronics.
  10. Where can I find detailed specifications for the NSS60200LT1G?
    Detailed specifications can be found on the datasheets available at Mouser, Digi-Key, and the onsemi official website.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):2 A
Voltage - Collector Emitter Breakdown (Max):60 V
Vce Saturation (Max) @ Ib, Ic:220mV @ 200mA, 2A
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:150 @ 500mA, 2V
Power - Max:460 mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
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In Stock

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Same Series
NSV60200LT1G
NSV60200LT1G
TRANS PNP 60V 2A SOT23-3

Similar Products

Part Number NSS60200LT1G NSS60201LT1G NSV60200LT1G NSS20200LT1G NSS40200LT1G
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active
Transistor Type PNP NPN PNP PNP PNP
Current - Collector (Ic) (Max) 2 A 2 A 2 A 2 A 2 A
Voltage - Collector Emitter Breakdown (Max) 60 V 60 V 60 V 20 V 40 V
Vce Saturation (Max) @ Ib, Ic 220mV @ 200mA, 2A 140mV @ 200mA, 2A 220mV @ 200mA, 2A 180mV @ 200mA, 2A 170mV @ 200mA, 2A
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 500mA, 2V 150 @ 1A, 2V 150 @ 500mA, 2V 250 @ 500mA, 2V 220 @ 500mA, 2V
Power - Max 460 mW 460 mW 460 mW 460 mW 460 mW
Frequency - Transition 100MHz 100MHz 100MHz 100MHz 100MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)

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