NSS60200LT1G
  • Share:

onsemi NSS60200LT1G

Manufacturer No:
NSS60200LT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PNP 60V 2A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NSS60200LT1G is a high-performance PNP bipolar junction transistor (BJT) manufactured by onsemi. This transistor is designed for a wide range of applications requiring low voltage and high current handling. It features a compact SOT-23-3 (TO-236) surface mount package, making it suitable for space-constrained designs. The NSS60200LT1G is known for its reliability and efficiency, making it a popular choice in various electronic circuits.

Key Specifications

ParameterValue
Transistor TypePNP Bipolar Junction Transistor (BJT)
Collector-Base Voltage (Vcb)60 V
Collector-Emitter Voltage (Vce)60 V
Emitter-Base Voltage (Veb)5 V
Collector Current (Ic)2 A
Base Current (Ib)200 mA
Power Dissipation (Pd)460 mW
Transition Frequency (ft)100 MHz
Package TypeSOT-23-3 (TO-236)
Operating Temperature Range-55°C to 150°C

Key Features

  • High collector current of up to 2 A
  • High collector-emitter voltage of 60 V
  • Compact SOT-23-3 (TO-236) surface mount package
  • High transition frequency of 100 MHz
  • Low power dissipation of 460 mW
  • Wide operating temperature range from -55°C to 150°C

Applications

The NSS60200LT1G is versatile and can be used in a variety of applications, including:

  • Power amplifiers and switches
  • Audio amplifiers
  • Automotive systems
  • Industrial control circuits
  • Consumer electronics

Q & A

  1. What is the collector current rating of the NSS60200LT1G?
    The collector current rating is up to 2 A.
  2. What is the maximum collector-emitter voltage for the NSS60200LT1G?
    The maximum collector-emitter voltage is 60 V.
  3. What package type does the NSS60200LT1G use?
    The NSS60200LT1G uses the SOT-23-3 (TO-236) surface mount package.
  4. What is the transition frequency of the NSS60200LT1G?
    The transition frequency is 100 MHz.
  5. What is the power dissipation of the NSS60200LT1G?
    The power dissipation is 460 mW.
  6. What is the operating temperature range for the NSS60200LT1G?
    The operating temperature range is from -55°C to 150°C.
  7. Is the NSS60200LT1G suitable for high-frequency applications?
    Yes, with a transition frequency of 100 MHz, it is suitable for high-frequency applications.
  8. Can the NSS60200LT1G be used in automotive systems?
    Yes, it can be used in automotive systems due to its robust specifications and wide operating temperature range.
  9. What are some common applications for the NSS60200LT1G?
    Common applications include power amplifiers, audio amplifiers, industrial control circuits, and consumer electronics.
  10. Where can I find detailed specifications for the NSS60200LT1G?
    Detailed specifications can be found on the datasheets available at Mouser, Digi-Key, and the onsemi official website.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):2 A
Voltage - Collector Emitter Breakdown (Max):60 V
Vce Saturation (Max) @ Ib, Ic:220mV @ 200mA, 2A
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:150 @ 500mA, 2V
Power - Max:460 mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
0 Remaining View Similar

In Stock

$0.44
1,267

Please send RFQ , we will respond immediately.

Same Series
NSS60200LT1G
NSS60200LT1G
TRANS PNP 60V 2A SOT23-3

Similar Products

Part Number NSS60200LT1G NSS60201LT1G NSV60200LT1G NSS20200LT1G NSS40200LT1G
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active
Transistor Type PNP NPN PNP PNP PNP
Current - Collector (Ic) (Max) 2 A 2 A 2 A 2 A 2 A
Voltage - Collector Emitter Breakdown (Max) 60 V 60 V 60 V 20 V 40 V
Vce Saturation (Max) @ Ib, Ic 220mV @ 200mA, 2A 140mV @ 200mA, 2A 220mV @ 200mA, 2A 180mV @ 200mA, 2A 170mV @ 200mA, 2A
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 500mA, 2V 150 @ 1A, 2V 150 @ 500mA, 2V 250 @ 500mA, 2V 220 @ 500mA, 2V
Power - Max 460 mW 460 mW 460 mW 460 mW 460 mW
Frequency - Transition 100MHz 100MHz 100MHz 100MHz 100MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)

Related Product By Categories

BC858BMTF
BC858BMTF
Fairchild Semiconductor
TRANS PNP 30V 0.1A SOT23-3
BC857AMTF
BC857AMTF
Fairchild Semiconductor
TRANS PNP 45V 0.1A SOT23-3
BCP69-16/S500115
BCP69-16/S500115
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
BC848BL3E6327XTMA1
BC848BL3E6327XTMA1
Infineon Technologies
BC848 - GENERAL PURPOSE TRANSIST
BC817K-25HVL
BC817K-25HVL
Nexperia USA Inc.
TRANS NPN 45V 0.5A TO236AB
NSS60200LT1G
NSS60200LT1G
onsemi
TRANS PNP 60V 2A SOT23-3
BC857CQB-QZ
BC857CQB-QZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
BCX5616QTC
BCX5616QTC
Diodes Incorporated
PWR MID PERF TRANSISTOR SOT89 T&
MJD45H11-001
MJD45H11-001
onsemi
TRANS PNP 80V 8A IPAK
MMBT3904TT1
MMBT3904TT1
onsemi
TRANS NPN 40V 200MA SOT416
TIP30C-S
TIP30C-S
Bourns Inc.
TRANS PNP 100V 1A TO220
BC807-25W/MIX
BC807-25W/MIX
Nexperia USA Inc.
TRANS PNP 45V 0.5A SOT323

Related Product By Brand

SZMMSZ4V7T1G
SZMMSZ4V7T1G
onsemi
DIODE ZENER 4.7V 500MW SOD123
1N5353BRL
1N5353BRL
onsemi
DIODE ZENER 16V 5W AXIAL
MMBT4401LT1G
MMBT4401LT1G
onsemi
TRANS NPN 40V 0.6A SOT23-3
MJD44H11TF
MJD44H11TF
onsemi
TRANS NPN 80V 8A DPAK
MC74VHC1GT08EDFT2G
MC74VHC1GT08EDFT2G
onsemi
IC GATE AND 1CH 2-INP SC88A
NLSV2T244DR2G
NLSV2T244DR2G
onsemi
IC TRNSLTR UNIDIRECTIONAL 8SOIC
CAT24C02YI-GT3JN
CAT24C02YI-GT3JN
onsemi
IC EEPROM 2KBIT I2C 8TSSOP
NCP1015AP100G
NCP1015AP100G
onsemi
IC OFFLINE SWITCH FLYBACK 7DIP
MC33025DWR2
MC33025DWR2
onsemi
IC OFFLINE SW HALF-BRDG 16SOIC
MC33153DR2
MC33153DR2
onsemi
IC GATE DRVR LOW-SIDE 8SOIC
AMIS30521C5212G
AMIS30521C5212G
onsemi
IC MTRDRV BIPLR 4.75-5.25V 32QFP
NCP380LSN05AAT1G
NCP380LSN05AAT1G
onsemi
IC PWR SWITCH P-CHAN 1:1 5TSOP