Overview
The MJD45H11 is a PNP epitaxial silicon transistor produced by onsemi, designed for general-purpose power and switching applications. This transistor is part of the MJD45H11 series, which includes complementary pairs that simplify design processes. It is packaged in a TO-252 3L (DPAK) surface mount configuration, making it suitable for a variety of modern electronic designs.
The MJD45H11 is electrically similar to the popular D45H series and offers fast switching speeds and low collector-emitter saturation voltage, making it ideal for output or driver stages in applications such as switching regulators, converters, and power amplifiers.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Base Voltage | VCBO | -100 | V |
| Collector-Emitter Voltage | VCEO | -80 | V |
| Emitter-Base Voltage | VEBO | -7 | V |
| Continuous Collector Current | IC | -8 | A |
| Peak Pulse Collector Current | ICM | -16 | A |
| Power Dissipation | PD | 2.7 (Note 5), 2.4 (Note 6), 1.5 (Note 7) | W |
| Thermal Resistance, Junction to Ambient Air | RθJA | 46 (Note 5), 52 (Note 6), 83 (Note 7) | °C/W |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | °C |
| Electrostatic Discharge — Human Body Model | ESD HBM | 4000 | V |
| DC Current Gain | hFE | 40-60 | |
| Collector-Emitter Saturation Voltage | VCE(sat) | 1 V | V |
| Base-Emitter Saturation Voltage | VBE(sat) | 1.5 V | V |
| Current Gain Bandwidth Product | fT | 90 MHz | MHz |
| Output Capacitance | Cob | 130 pF | pF |
| Turn-On Time | tON | 300 ns | ns |
| Storage Time | tSTG | 500 ns | ns |
| Fall Time | tF | 100 ns | ns |
Notes: Refer to the datasheet for specific conditions and notes associated with each parameter.
Key Features
- General-Purpose Power and Switching: Suitable for output or driver stages in applications such as switching regulators, converters, and power amplifiers.
- Surface Mount Configuration: Packaged in TO-252 3L (DPAK) for surface mount applications.
- Fast Switching Speeds: Offers fast switching times, making it efficient for high-frequency applications.
- Low Collector Emitter Saturation Voltage: Low VCE(sat) reduces power losses and improves efficiency.
- Complementary Pairs: Simplifies designs by providing complementary pairs (MJD44H11 for NPN and MJD45H11 for PNP).
- AEC-Q101 Qualified: Meets automotive and other stringent application requirements.
- Pb-Free: Compliant with lead-free regulations.
Applications
- Switching Regulators: Ideal for use in switching regulators due to its fast switching speeds and low saturation voltage.
- Converters: Suitable for various converter applications, including DC-DC converters and AC-DC converters.
- Power Amplifiers: Used in power amplifier stages where high current and fast switching are required.
- Automotive Systems: AEC-Q101 qualified, making it suitable for automotive and other high-reliability applications.
- General Power and Switching: General-purpose power and switching applications where high current handling and fast switching are necessary.
Q & A
- What is the maximum collector-emitter voltage (VCEO) for the MJD45H11?
The maximum collector-emitter voltage (VCEO) for the MJD45H11 is -80 V.
- What is the continuous collector current (IC) rating for the MJD45H11?
The continuous collector current (IC) rating for the MJD45H11 is -8 A.
- What is the thermal resistance, junction to ambient air (RθJA), for the MJD45H11?
The thermal resistance, junction to ambient air (RθJA), for the MJD45H11 varies depending on the mounting conditions, with values ranging from 46°C/W to 83°C/W.
- What is the operating and storage temperature range for the MJD45H11?
The operating and storage temperature range for the MJD45H11 is -55°C to +150°C.
- Is the MJD45H11 AEC-Q101 qualified?
Yes, the MJD45H11 is AEC-Q101 qualified, making it suitable for automotive and other high-reliability applications.
- What is the collector-emitter saturation voltage (VCE(sat)) for the MJD45H11?
The collector-emitter saturation voltage (VCE(sat)) for the MJD45H11 is approximately 1 V.
- What is the current gain bandwidth product (fT) for the MJD45H11?
The current gain bandwidth product (fT) for the MJD45H11 is 90 MHz.
- What is the turn-on time (tON) for the MJD45H11?
The turn-on time (tON) for the MJD45H11 is approximately 300 ns.
- Is the MJD45H11 lead-free?
Yes, the MJD45H11 is lead-free, complying with Pb-free regulations.
- What package type is the MJD45H11 available in?
The MJD45H11 is available in a TO-252 3L (DPAK) surface mount package.
