Overview
The MJD44H11RLG, produced by onsemi, is a complementary power transistor designed for general-purpose power and switching applications. This NPN transistor is part of the MJD44H11 and MJD45H11 series, which are electrically similar to the popular D44H/D45H series. It is packaged in a DPAK (TO-252) package, making it suitable for surface mount applications. The device is Pb-free, halogen-free, and BFR-free, ensuring compliance with RoHS standards. It is also AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
Key Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Emitter Sustaining Voltage | VCEO(sus) | 80 | - | - | Vdc |
| Collector Cutoff Current | ICES | - | - | 1.0 | μA |
| Emitter Cutoff Current | IEBO | - | - | 1.0 | μA |
| Collector-Emitter Saturation Voltage | VCE(sat) | - | - | 1 | Vdc |
| Base-Emitter Saturation Voltage | VBE(sat) | - | - | 1.5 | Vdc |
| DC Current Gain | hFE | 60 | 40 | - | - |
| Collector Capacitance | Ccb | - | - | 45 | pF |
| Gain Bandwidth Product | fT | - | - | 85 | MHz |
| Delay and Rise Times | td + tr | - | - | 300 | ns |
| Storage Time | ts | - | - | 500 | ns |
| Fall Time | tf | - | - | 140 | ns |
| Thermal Resistance, Junction-to-Case | RJC | - | - | 6.25 | °C/W |
| Thermal Resistance, Junction-to-Ambient | RJA | - | - | 71.4 | °C/W |
| Lead Temperature for Soldering | TL | - | - | 260 | °C |
Key Features
- Lead formed for surface mount application in plastic sleeves (no suffix) and straight lead version in plastic sleeves (“−1” suffix).
- Electrically similar to popular D44H/D45H series.
- Low collector-emitter saturation voltage.
- Fast switching speeds.
- Complementary pairs simplify designs.
- Epoxy meets UL 94 V-0 @ 0.125 in.
- NJV prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.
- Pb-free, halogen-free, and BFR-free, ensuring RoHS compliance.
Applications
The MJD44H11RLG is designed for various power and switching applications, including:
- Output or driver stages in switching regulators.
- Converters.
- Power amplifiers.
- Automotive and other demanding applications due to its AEC-Q101 qualification and PPAP capability.
Q & A
- What is the MJD44H11RLG transistor used for? The MJD44H11RLG is used for general-purpose power and switching applications, such as output or driver stages in switching regulators, converters, and power amplifiers.
- What package type does the MJD44H11RLG come in? The MJD44H11RLG comes in a DPAK (TO-252) package for surface mount applications.
- Is the MJD44H11RLG RoHS compliant? Yes, the MJD44H11RLG is Pb-free, halogen-free, and BFR-free, ensuring RoHS compliance.
- What are the thermal resistance values for the MJD44H11RLG? The thermal resistance from junction-to-case (RJC) is 6.25°C/W, and from junction-to-ambient (RJA) is 71.4°C/W.
- What is the maximum collector-emitter sustaining voltage for the MJD44H11RLG? The maximum collector-emitter sustaining voltage (VCEO(sus)) is 80 Vdc.
- What are the typical values for collector-emitter and base-emitter saturation voltages? The collector-emitter saturation voltage (VCE(sat)) is typically 1 Vdc, and the base-emitter saturation voltage (VBE(sat)) is typically 1.5 Vdc.
- What is the gain bandwidth product for the MJD44H11RLG? The gain bandwidth product (fT) is typically 85 MHz.
- What are the switching times for the MJD44H11RLG? The delay and rise times (td + tr) are typically 300 ns, the storage time (ts) is typically 500 ns, and the fall time (tf) is typically 140 ns.
- Is the MJD44H11RLG suitable for automotive applications? Yes, the MJD44H11RLG is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
- What is the lead temperature for soldering the MJD44H11RLG? The lead temperature for soldering (TL) is 260°C.
