Overview
The NJVMJD44H11T4G-VF01 is a complementary power transistor manufactured by onsemi, designed for general-purpose power and switching applications. This transistor is part of the NJVMJD4xH11xxG series, which includes both NPN (NJVMJD44H11) and PNP (NJVMJD45H11) types. It is particularly suited for output or driver stages in switching regulators, converters, and power amplifiers.
The device is packaged in a DPAK (TO-252-3) surface mount configuration, making it ideal for applications requiring compact and efficient design. The NJVMJD44H11T4G-VF01 is AEC-Q101 qualified and PPAP capable, ensuring it meets stringent automotive and industrial standards.
Key Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Emitter Voltage | VCEO | - | - | 80 | Vdc |
| Collector Current - Continuous | IC | - | - | 8 | A |
| Collector Current - Peak | ICM | - | - | 16 | A |
| Total Power Dissipation | Pd | - | - | 1.75 | W |
| Collector-Emitter Saturation Voltage | VCE(sat) | - | - | 1 | Vdc |
| Base-Emitter Saturation Voltage | VBE(sat) | - | - | 1.5 | Vdc |
| DC Current Gain (hFE) | - | 40 | - | - | @ IC = 4A, VCE = 1V |
| Gain Bandwidth Product | fT | - | - | 85 | MHz |
| Operating Temperature | TJ | -55 | - | 150 | °C |
| Thermal Resistance, Junction-to-Case | RJC | - | - | 6.25 | °C/W |
| Thermal Resistance, Junction-to-Ambient | RJA | - | - | 71.4 | °C/W |
Key Features
- NPN Transistor: The NJVMJD44H11 is an NPN transistor, while the NJVMJD45H11 is a PNP transistor, offering complementary pairs for simplified designs.
- Low Collector-Emitter Saturation Voltage: The device features a low VCE(sat) of 1 V, enhancing efficiency in switching applications.
- Fast Switching Speeds: Fast switching times with delay and rise times of 300 ns and fall time of 140 ns ensure high performance in dynamic applications.
- Surface Mount Package: The DPAK package is designed for surface mount applications, facilitating compact and efficient board design.
- AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring unique site and control change requirements.
- RoHS Compliant and Pb-Free/Halogen Free/BFR Free: Ensures environmental compliance and safety.
- High Gain Bandwidth Product: With a gain bandwidth product of 85 MHz, it is suitable for high-frequency applications.
Applications
- Switching Regulators and Converters: Ideal for output or driver stages in switching regulators and converters due to its fast switching speeds and low saturation voltage.
- Power Amplifiers: Suitable for power amplifier applications requiring high current handling and fast switching.
- Automotive Electronics: AEC-Q101 qualified, making it suitable for various automotive applications.
- Industrial Power Systems: Used in industrial power systems where reliability and high performance are critical.
Q & A
- What is the maximum collector-emitter voltage of the NJVMJD44H11T4G-VF01?
The maximum collector-emitter voltage (VCEO) is 80 Vdc.
- What is the package type of the NJVMJD44H11T4G-VF01?
The package type is DPAK (TO-252-3) for surface mount applications.
- What are the operating temperature ranges for this transistor?
The operating temperature range is from -55°C to 150°C (TJ).
- Is the NJVMJD44H11T4G-VF01 RoHS compliant?
Yes, the device is RoHS compliant, Pb-Free, Halogen Free/BFR Free.
- What is the maximum collector current of the NJVMJD44H11T4G-VF01?
The maximum collector current (IC) is 8 A continuous and 16 A peak.
- What is the gain bandwidth product of the NJVMJD44H11T4G-VF01?
The gain bandwidth product (fT) is 85 MHz.
- What are the typical applications of the NJVMJD44H11T4G-VF01?
Typical applications include switching regulators, converters, power amplifiers, and automotive electronics.
- Is the NJVMJD44H11T4G-VF01 AEC-Q101 qualified?
Yes, the device is AEC-Q101 qualified and PPAP capable.
- What is the thermal resistance, junction-to-case (RJC) of the NJVMJD44H11T4G-VF01?
The thermal resistance, junction-to-case (RJC) is 6.25 °C/W.
- What is the collector-emitter saturation voltage (VCE(sat)) of the NJVMJD44H11T4G-VF01?
The collector-emitter saturation voltage (VCE(sat)) is 1 Vdc.
