Overview
The MMBT2222ALT3G is a general-purpose NPN bipolar junction transistor (BJT) manufactured by onsemi. This transistor is designed for a wide range of applications requiring low to moderate current and voltage handling. It is packaged in the SOT-23 format, making it suitable for surface-mount technology (SMT) assembly. The device is lead-free, complying with environmental regulations.
Key Specifications
| Characteristic | Symbol | Min | Max | Unit |
|---|---|---|---|---|
| Collector-Base Breakdown Voltage | V(BR)CBO | 60 | 75 | Vdc |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 30 | 40 | Vdc |
| Emitter-Base Breakdown Voltage | V(BR)EBO | 5.0 | 6.0 | Vdc |
| Collector Cutoff Current | ICBO | - | 0.01 | μAdc |
| Emitter Cutoff Current | IEBO | - | 100 | nAdc |
| Base-Emitter Saturation Voltage | VBE(sat) | 0.6 | 1.3 | Vdc |
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.3 | 1.0 | Vdc |
| Current-Gain Bandwidth Product | fT | 250 | 300 | MHz |
| Output Capacitance | Cobo | - | 8.0 | pF |
| Input Capacitance | Cibo | - | 30 | pF |
Key Features
- General Purpose NPN BJT: Suitable for a wide range of applications including amplifiers, switches, and general-purpose circuits.
- SOT-23 Package: Compact surface-mount package ideal for space-constrained designs.
- Lead-Free: Compliant with environmental regulations, making it suitable for use in eco-friendly designs.
- Low to Moderate Current Handling: Rated for up to 0.6 A of collector current and 40 V of collector-emitter voltage.
- High Current-Gain Bandwidth Product: fT of 250-300 MHz, suitable for high-frequency applications.
Applications
- Amplifiers: Can be used in various amplifier configurations such as common emitter, common collector, and common base.
- Switches: Suitable for switching applications due to its low saturation voltage and high current gain.
- General Purpose Circuits: Ideal for use in a variety of general-purpose electronic circuits requiring low to moderate current and voltage handling.
- Automotive and Industrial Electronics: Can be used in automotive and industrial applications where reliability and durability are crucial.
Q & A
- What is the collector-emitter breakdown voltage of the MMBT2222ALT3G?
The collector-emitter breakdown voltage (V(BR)CEO) is between 30 V and 40 V.
- What is the maximum collector current rating of the MMBT2222ALT3G?
The maximum collector current rating is 0.6 A.
- What package type is the MMBT2222ALT3G available in?
The MMBT2222ALT3G is available in the SOT-23 package.
- Is the MMBT2222ALT3G lead-free?
- What is the current-gain bandwidth product (fT) of the MMBT2222ALT3G?
The current-gain bandwidth product (fT) is between 250 MHz and 300 MHz.
- What are some common applications for the MMBT2222ALT3G?
Common applications include amplifiers, switches, and general-purpose electronic circuits.
- What is the emitter-base breakdown voltage of the MMBT2222ALT3G?
The emitter-base breakdown voltage (V(BR)EBO) is between 5.0 V and 6.0 V.
- What is the base-emitter saturation voltage of the MMBT2222ALT3G?
The base-emitter saturation voltage (VBE(sat)) is between 0.6 V and 1.3 V.
- What is the collector-emitter saturation voltage of the MMBT2222ALT3G?
The collector-emitter saturation voltage (VCE(sat)) is between 0.3 V and 1.0 V.
- What is the output capacitance of the MMBT2222ALT3G?
The output capacitance (Cobo) is up to 8.0 pF.
