Overview
The SMMBT2222ALT1G is a general-purpose NPN silicon transistor produced by onsemi. This device is part of the MMBT2222 series and is known for its reliability and versatility in various electronic applications. The SMMBT2222ALT1G is packaged in a SOT-23 (TO-236) case, making it suitable for compact and high-density circuit designs. It is Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability and compliance with regulatory standards.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 40 | Vdc |
| Collector-Base Voltage | VCBO | 75 | Vdc |
| Emitter-Base Voltage | VEBO | 6.0 | Vdc |
| Collector Current - Continuous | IC | 600 | mAdc |
| Collector Current - Peak | ICM | 1100 | mAdc |
| Thermal Resistance, Junction-to-Ambient (FR-5 Board) | RJA | 556 | °C/W |
| Junction and Storage Temperature Range | TJ, Tstg | -55 to +150 | °C |
| DC Current Gain (IC = 10 mAdc, VCE = 10 Vdc) | hFE | 100 | |
| Collector-Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) | VCE(sat) | 0.4 | Vdc |
| Base-Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) | VBE(sat) | 0.6 | Vdc |
Key Features
- Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability.
- AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other critical applications.
- High collector current capability up to 600 mA continuous and 1100 mA peak.
- Low collector-emitter saturation voltage (VCE(sat)) and base-emitter saturation voltage (VBE(sat)).
- High current gain (hFE) with a minimum value of 100 at IC = 10 mA and VCE = 10 V.
- Compact SOT-23 package for high-density circuit designs.
Applications
- General-purpose switching and amplification in electronic circuits.
- Automotive systems due to its AEC-Q101 qualification and PPAP capability.
- Consumer electronics such as audio amplifiers, power supplies, and control circuits.
- Industrial control systems and automation.
- Medical devices requiring high reliability and compliance with regulatory standards.
Q & A
- What is the collector-emitter voltage rating of the SMMBT2222ALT1G?
The collector-emitter voltage (VCEO) rating is 40 Vdc.
- Is the SMMBT2222ALT1G RoHS compliant?
- What is the maximum continuous collector current for the SMMBT2222ALT1G?
The maximum continuous collector current (IC) is 600 mA.
- What is the thermal resistance, junction-to-ambient, for the SMMBT2222ALT1G on an FR-5 board?
The thermal resistance, junction-to-ambient (RJA), is 556 °C/W on an FR-5 board.
- What is the DC current gain (hFE) of the SMMBT2222ALT1G at IC = 10 mA and VCE = 10 V?
The DC current gain (hFE) is a minimum of 100 at IC = 10 mA and VCE = 10 V.
- What are the typical applications of the SMMBT2222ALT1G?
The SMMBT2222ALT1G is used in general-purpose switching and amplification, automotive systems, consumer electronics, industrial control systems, and medical devices.
- What is the package type of the SMMBT2222ALT1G?
The SMMBT2222ALT1G is packaged in a SOT-23 (TO-236) case.
- Is the SMMBT2222ALT1G suitable for high-density circuit designs?
- What are the junction and storage temperature ranges for the SMMBT2222ALT1G?
The junction and storage temperature range is -55 to +150 °C.
- What is the collector-emitter saturation voltage (VCE(sat)) at IC = 150 mA and IB = 15 mA?
The collector-emitter saturation voltage (VCE(sat)) is 0.4 Vdc at IC = 150 mA and IB = 15 mA.
